財満・中塚研
Zaima&Nakatsuka Laboratory
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名古屋大学大学院・工学研究科・結晶材料工学専攻
財満・中塚研究室
最終更新日: 2017/6/14

国際会議発表

2017
  1. [Invited] "Effect of Oxynitridation Annealing for SiO2/SiC Interface on Defects Properties", W. Takeuchi, K. Yamamoto, M. Sakashita, O. Nakatsuka, and S. Zaima, WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", Sendai, Japan, Feb. 13-14, 2017.
  2. "In situ phosphorus doping of Ge and Ge1-xSnx epitaxial layers by low-temperature metal-organic chemical vapor deposition", S. Ike, W. Takeuchi, O. Nakatsuka, and S. Zaima, WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", Sendai, Japan, Feb. 13-14, 2017.
  3. "Solid phase crystallization of Ge0.98Sn0.02 layers on various insulating substrates", I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima, WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", Sendai, Japan, Feb. 13-14, 2017.
  4. "Influence of atomic layer deposition temperature of GeO2 layer on electrical properties of Ge and Ge1-xSnx gate stack", Y. Kaneda, M. Kanematsu, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima, WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", Sendai, Japan, Feb. 13-14, 2017.
  5. "Development of in-situ Sb-Doped Ge1-xSnx Epitaxial Layers for Source/Drain Stressor of Strained Ge Transistors", J. Jeon, A. Suzuki, K. Takahashi, O. Nakatsuka, and S. Zaima, The 1st Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan, Feb. 28-Mar. 2, 2017.
  6. "Formation of SiC and SiCN films by chemical vapor deposition using vinylsilane", T. Doi, W. Takeuchi, Y. Jin, H. Kokubun, S. Yasuhara, M. Sakashita, M. Kuroswasa, O. Nakatsuka, and S. Zaima, 9th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 10th International Conference on Plasma-Nano Technology & Science (ISPlasma2017/IC-PLANTS2017), Aichi, Japan, Mar. 1-5, 2017.
  7. "Selective growth of Ge1-xSnx epitaxial layer on patterned Si substrate using metal organic chemical vapor deposition method", T. Washizu, S. Ike, W. Takeuchi, O. Nakatsuka, and S. Zaima 9th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 10th International Conference on Plasma-Nano Technology & Science (ISPlasma2017/IC-PLANTS2017), Aichi, Japan, Mar. 1-5, 2017.
  8. "Electrical Properties of AlON/4H-SiC MOS Capacitor Prepared by Plasma-Assisted Atomic Layer Deposition", W. Takeuchi, K. Yamamoto, T. Mimura, M. Sakashita, O. Nakatsuka, and S. Zaima, 9th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 10th International Conference on Plasma-Nano Technology & Science (ISPlasma2017/IC-PLANTS2017), Aichi, Japan, Mar. 1-5, 2017.
  9. "Epitaxial growth of n+-Ge1-xSnxlayers with in situ phosphorus doping using low-temperature metal-organic chemical vapor deposition method", S. Ike, W. Takeuchi, O. Nakatsuka, and S. Zaima, The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), pp. 109-110, Coventry, UK, May 14-19, 2017.
  10. "Solid phase epitaxy of Si1-xSnx layers on various substrates", M. Kurosawa, M. Kato, K. Takahashi, O. Nakatsuka, and S. Zaima, The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), pp. 123-124, Coventry, UK, May 14-19, 2017.
  11. "Formation of heavily Sb and Ga doped poly-Ge1-xSnx layers on insulator using pulsed laser annealing in water", K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima, pp. 125-126, The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, May 14-19, 2017.
  12. "Control of lattice constant of Ge1-x-ySixSny layer for energy band engineering in Ge1-xSnx/ Ge1-x-ySixSny heterostructure", M. Fukuda, K. Watanabe, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima, The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), pp. 127-128, Coventry, UK, May 14-19, 2017.
  13. "Alleviation of Fermi level pinning at metal/Ge interface using lattice-matching group-IV ternary alloy interlayer", A. Suzuki, O. Nakatsuka, S. Toda, M. Sakashita, and S. Zaima, The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), pp. 211-212, Coventry, UK, May 14-19, 2017.
  14. [Invited] "Development of GeSn and related semiconductor thin films for next generation optoelectronic applications", O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima, 2017 Global Conference on Polymer and Composite Materials (PCM 2017), Guangzhou, China, May 24-25, 2017.
  15. "Formation of Epitaxial Hf Germanide/Ge Contacts for Schottky Barrier Height Engineering", O. Nakatsuka, A. Suzuki, J. McVittie, Y. Nishi, and S. Zaima, 17th International Workshop on Junction Technology 2017 (IWJT2017), Kyoto, Japan, June 1-2, 2017.
2016
  1. "Structural and Electrical Properties of Low Temperature CVD-Grown SiGe Epitaxial Layers", S. Ike, E. Simoen, Y. Shimura, A. Hikavyy, W. Vandervorst, R. Loo, W. Takauchi, O. Nakatsuka, and S. Zaima, 9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", Sendai, Japan, Jan. 11-12, 2016.
  2. "Control of Schottky barrier height at metal/Ge interface by insertion of Ge1−xSnx layer", A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima, 9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", Sendai, Japan, Jan. 11-12, 2016.
  3. "Phosphorus doping into Ge with low electrical damage by liquid immersion laser doping", K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima, 9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", Sendai, Japan, Jan. 11-12, 2016.
  4. "Crystalline and Electrical Properties of in-situ Sb-Doped Ge1-xSnx Epitaxial Layers", J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima, 9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", Sendai, Japan, Jan. 11-12, 2016.
  5. "Formation of GeSn layer sandwiched with strain-controlled GeSiSn layers", M. Fukuda, T. Yamaha, T. Asano, S. Fujinami, Y. Shimura, M. Kurosawa, O. Nakatsuka, and S. Zaima, 9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", Sendai, Japan, Jan. 11-12, 2016.
  6. "Formation of poly-Si1-x-ySnxCy ternary alloy layer and characterization of its crystalline and optical properties", S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima, 9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", Sendai, Japan, Jan. 11-12, 2016.
  7. "Impact of Atomic Hydrogen Irradiation on Epitaxial Growth of Ge1-xSnx and its Crystalline Property", S. Fujinami, T. Asano, T. Koyama, M. Kurosawa, M. Sakashita, O. Nakatsuka, H. Kishida, and S. Zaima, 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 9th International Conference on Plasma-Nano Technology & Science (ISPlasma2016/IC-PLANTS2016), Nagoya, Japan, Mar. 6-10, 2016.
  8. "Solid phase crystallization of Si1-x-ySnxCy ternary alloy layers and characteriziation of its crystalline and optical properties", S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima, 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 9th International Conference on Plasma-Nano Technology & Science (ISPlasma2016/IC-PLANTS2016), Nagoya, Japan, Mar. 6-10, 2016.
  9. "International collaboration: the path to breakthroughs in (Si)GeSn material development", R. Loo, M. Caymax, A. Vantomme, O. Nakatsuka, and S. Zaima,12th International Nanotechnology Conference on Communication ans Cooperation (INC12), Leuven, Belgium, May 10-12, 2016.
  10. [Invited]"Development of GeSn thin film technology for electronic and optoelectronic applications", O. Nakatsuka, M. Kurosawa, W. Takeuchi, Y. Shimura, M. Sakashita, and S. Zaima, Energy Materials Nanotechnology (EMN) Summer Meeting, Cancun, Mexico, June 5-9, 2016.
  11. "Control of the Fermi Level Pinning Position at Metal/Ge Interface by Using Ge1−xSnx Interlayer", A. Suzuki, O. Nakatsuka, M. Sakashita, and S. Zaima, 7th International Symposium on Control of Semiconductor Interface (ISCSI-VII) / International SiGe Technology and Device Meeting 2016 (ISTDM2016), Nagoya, Japan, June 7-11, 2016.
  12. "Interfacial Energy Control for Low-Temperature Crystallization of Ge-rich GeSn Layers on Insulating Substrate", I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima, 7th International Symposium on Control of Semiconductor Interface (ISCSI-VII) / International SiGe Technology and Device Meeting 2016 (ISTDM2016), Nagoya, Japan, June 7-11, 2016.
  13. "Formation and Characterization of GeSiSn/GeSn/GeSiSn Double-Heterostructure with Strain-controlled GeSiSn layer", M. Fukuda, T. Yamaha, T. Asano, S. Fujinami, Y. Shimura, M. Kurosawa, O. Nakatsuka, and S. Zaima, 7th International Symposium on Control of Semiconductor Interface (ISCSI-VII) / International SiGe Technology and Device Meeting 2016 (ISTDM2016), Nagoya, Japan, June 7-11, 2016.
  14. "Effect of Local and Global Strain on Thermal Stability of Sn in GeSn Based Film", Y. Shimura, T. Asano, T. Yamaha, O. Nakatsuka, and S. Zaima, 7th International Symposium on Control of Semiconductor Interface (ISCSI-VII) / International SiGe Technology and Device Meeting 2016 (ISTDM2016), Nagoya, Japan, June 7-11, 2016.
  15. "Electrical and Optical Properties Improvement of GeSn Layers Formed at High Temperature under Well-controlled Sn Migration", N. Taoka, G. Capellini, V. Schlykow, M. Montanari, P. Zaumseil, O. Nakatsuka, S. Zaima, and T. Schroeder, 7th International Symposium on Control of Semiconductor Interface (ISCSI-VII) / International SiGe Technology and Device Meeting 2016 (ISTDM2016), Nagoya, Japan, June 7-11, 2016.
  16. "Direct Measurement of Anisotropic Local Strain in Ge Nanostructures Strained with MOCVD-grown Ge1-xSnx by using Microdiffraction", S. Ike, Y. Inuzuka, T. Washizu, W. Takeuchi, Y. Shimura, Y. Imai, O. Nakatsuka, S. Kimura, and S. Zaima, 7th International Symposium on Control of Semiconductor Interface (ISCSI-VII) / International SiGe Technology and Device Meeting 2016 (ISTDM2016), Nagoya, Japan, June 7-11, 2016.
  17. "Si1-xGex Bulk Single Crystals for Substrates of Electronic Devices", K. Kinoshita, Y. Arai, T. Maeda, and O. Nakatsuka, 7th International Symposium on Control of Semiconductor Interface (ISCSI-VII) / International SiGe Technology and Device Meeting 2016 (ISTDM2016), Nagoya, Japan, June 7-11, 2016.
  18. [Invited] "Growth and applications of GeSn-related group-IV semiconductor materials", S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, S. Ike, A. Suzuki, K. Takahashi, Y. Nagae, M. Kurosawa, W. Takeuchi, Y. Shimura, and M. Sakashita, IEEE Summer Topicals Meeting, Newport Beach, USA, July 11-13, 2016.
  19. "Low-Temperature Selective Epitaxial Growth of Ge on Si by using Metal Organic Chemical Vapor Deposition", T. Washizu, S. Ike, Y. Inuzuka, W. Takeuchi, O. Nakatsuka, S. Zaima, The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18), Nagoya, Japan, Aug. 7-12, 2016.
  20. [Invited] "Challenges in Engineering Materials Properties for GeSn Nanoelectronics", S. Zaima, O. Nakatsuka, M. Kurosawa, W. Takeuchi, and M. Sakashita, European Materials Research Society (E-MRS) 2016 Fall Meeting, Warsaw, Poland, Sept. 19-22, 2016.
  21. "Growth of Heavily Doped n-Ge Epitaxial Layer by In situ Phosphorus-doping with Low-temperature Metal-Organic Chemical Vapor Deposition" S. Ike, W. Takeuchi, O. Nakatsuka, and S. Zaima, International Conference on Solid State Devices and Materials (SSDM2016), Tsukuba, Japan, Sept. 26-29, 2016.
  22. "Impact of SixGe1-x-ySny interlayer on reduction in Schottky barrier height of metal/n-Ge contact" A. Suzuki, S. Toda, O. Nakatsuka, M. Sakashita, and S. Zaima, International Conference on Solid State Devices and Materials (SSDM2016), Tsukuba, Japan, Sept. 26-29, 2016.
  23. "Heavy Sb-doping for poly-GeSn on insulator using pulsed laser annealing in water", K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima, International Conference on Solid State Devices and Materials (SSDM2016), Tsukuba, Japan, Sept. 26-29, 2016.
  24. "Investigation of effects of inner stress with Sn incorporation on energy band of Si1-xSnx using density functional theory and photoelectron spectroscopy", Y. Nagae, M. Kurosawa, M. Araidai, O. Nakatsuka, K. Shiraishi, and S. Zaima, International Conference on Solid State Devices and Materials (SSDM2016), Tsukuba, Japan, Sept. 26-29, 2016.
  25. "Effect of N bonding structure in AlON on leakage current of 4H-SiC MOS capacitor", W. Takeuchi, K. Yamamoto, T. Mimura, M. Sakashita, T. Kanemura, O. Nakatsuka, and S. Zaima, International Conference on Solid State Devices and Materials (SSDM2016), Tsukuba, Japan, Sept. 26-29, 2016.
  26. "Analysis of Microscopic Strain and Crystalline Structure in Ge/Ge1-xSnx Fine Structures by Using Synchrotron X-ray Microdiffraction", S. Ike, O. Nakatsuka, Y. Inuzuka, T. Washizu, W. Takeuchi, Y. Imai, S. Kimura, and S. Zaima, 230th Meeting of the Electrochmical Society / Pacific Rim Meeting (PRiME) 2016, Honolulu, USA, Oct. 2-7, 2016.
  27. "Thermoelectric Properties of Ge-Rich GeSn Films Grown on Insulators", M. Kurosawa, K. Liu, M. Izawa, I. Tsunoda, and S. Zaima, 230th Meeting of the Electrochmical Society / Pacific Rim Meeting (PRiME) 2016, Honolulu, USA, Oct. 2-7, 2016.
  28. "Microwave Annealing for Low-Thermal Budget Process of Nickel Monogermanide/Germanium Contact Formation ", O. Nakatsuka, Y. Watanabe, A. Suzuki, Y. Nishi, and S. Zaima, Advanced Metallization Conference 2016: 26th Asian Session, Oct. 20-21, 2016, Tokyo, Japan.
  29. "Characterization of Deep-Level Defects in Ge1-xSnx Epitaxial Layers using Deep Level Transient Spectroscopy", W. Takeuchi, Y. Inuzuka, N. Taoka, M. Sakashita, O. Nakatsuka, S. Zaima, The 7th International Symposium on Advanced Science and Technology of Silicon Materials, Hawaii, USA, Nov. 21-25, 2016./li>
  30. "Growth of Si1-xSnx heteroepitaxial layers with very high Sn contents on InP(001) substrates", M. Kurosawa, M. Kato, O. Nakatsuka, and S. Zaima, JSPS Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration", Julich, Germany, Nov. 24-25, 2016.
  31. "Control of Schottky barrier height of metal/Ge contact using group-IV alloy interlayers", A. Suzuki, O. Nakatsuka, S. Toda, M. Sakashita, and S. Zaima, JSPS Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration", Julich, Germany, Nov. 24-25, 2016.
  32. "Formation of heavily Sb doped poly-Ge1-xSnx layer using pulsed laser annealing in water", K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima, JSPS Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration", Julich, Germany, Nov. 24-25, 2016.

2015
  1. "Crystal growth of Si1-xSnx alloys with high Sn contents", M. Kurosawa, M. Kato, Y. Nagae, T. Yamaha, O. Nakatsuka, and S. Zaima, 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", Sendai, Japan, Jan. 29-30, 2015.
  2. [Invited] "Behaviors of tin related defects in Sb doped n-type germanium", W. Takeuchi, N. Taoka, M. Sakashita, O. Nakatsuka, and S. Zaima, 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", Sendai, Japan, Jan. 29-30, 2015.
  3. "Photoluminescence Property of Ge1-xSnx Epitaxial Layers Grown on Ge(001) substrates", T. Asano, K. Hozaki, T. Koyama, N. Taoka, O. Nakatsuka, H. Kishida, and S. Zaima, 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", Sendai, Japan, Jan. 29-30, 2015.
  4. "Crystalline and Optical Properties of Ge1-x-ySixSny Ternary Alloy Layers for Solar Cell Application", T. Yamaha, S. Asaba, T. Terashima, T. Asano, W. Takeuchi, M. Sakashita, N.Taoka, O. Nakatsuka, and S. Zaima, 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", Sendai, Japan, Jan. 29-30, 2015.
  5. "Epitaxial Growth of Ge1-xSnx Thin Films by using Metal-Organic Chemical Vapor Deposition", Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, O. Nakatsuka, and S. Zaima, 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", Sendai, Japan, Jan. 29-30, 2015.
  6. "Formation of strain-free Si1-x-yGexSny layers on Ge surfaces by using solid-liquid coexisting annealing", M. Kato, M. Kurosawa, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima, 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", Sendai, Japan, Jan. 29-30, 2015.
  7. "Electrically-Active Defects in Ge1-xSnx Epitaxtial Layer", W. Takuechi, T. Asano, M. Sakashita, O. Nakatsuka, and S. Zaima, 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 8th International Conference on Plasma-Nano Technology (ISPlasma2015 / ICPLANTS2015), Nagoya, Japan, March 26-31, 2015.
  8. "Solid Phase Epitaxy of Ge1-x-ySnxCy Ternary Alloy Layers", H. Oda, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima, 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 8th International Conference on Plasma-Nano Technology (ISPlasma2015 / ICPLANTS2015), Nagoya, Japan, March 26-31, 2015.
  9. "Formation of type‐I energy band alignment of Ge1-x-ySixSny/Ge hetero structure", T. Yamaha, K. Kato, S. Shibayama, T. Asano, M. Sakashita, O. Nakatsuka, and S. Zaima, The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 9), Montreal, Canada, May 17-22, 2015.
  10. "Solid Phase Epitaxy of High Sn Content Si1-xSnx layer (x>0.2) on Ge Substrates for Optical Communication Applications", M. Kato, M. Kurosawa, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima, The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 9), Montreal, Canada, May 17-22, 2015.
  11. "Control of Electrically Active Defects in Ge1-xSnx Epitaxial Layers", T. Asano, S. Shibayama, W. Takeuchi, M. Sakashita, O.Nakatsuka, S. Zaima, The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 9), Montreal, Canada, May 17-22, 2015.
  12. "Characterization of Crystallinity of Ge1-xSnx Epitaxial Layers Grown by using Metal-Organic Chemical Vapor Deposition", Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, O. Nakatsuka, and S. Zaima, The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 9), Montreal, Canada, May 17-22, 2015.
  13. "Thermophysical characterizations of Ge1-xSnx epitaxial layers aiming for thermoelectric devices", M. Kurosawa, M. Fukuda, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima, The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 9), Montreal, Canada, May 17-22, 2015.
  14. "Formation of Ge pn-junction diode by phosphorus doping with liquid immersion laser irradiation", K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima, 15th International Workshop on Junction Technology 2015 (IWJT2015), Kyoto, Japan, June 11-12, 2015.
  15. [Invited] "Development of polycrystalline Sn-related group-IV semiconductor thin films --Aiming for 3D-IC--", M. Kurosawa, W. Takeuchi, S. Sakashita, O. Nakatsuka, and S. Zaima, 2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015), Jeju, Korea, June 29-July 1, 2015.
  16. [Invited] "Characterization of deep-level defects in epitaxial Ge1-xSnx/Ge structure", W. Takeuchi, Y. Inuzuka, T. Asano, M. Sakashita, O. Nakatsuka, and S. Zaima, JSPS International Workshop Core-to-Core Program Atomically Controlled Processing for Ultra-large Scale Integration, Marseille, France, July 9-10, 2015.
  17. "Reduction of Schottky barrier height with Sn/Ge contact", A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima, JSPS International Workshop Core-to-Core Program Atomically Controlled Processing for Ultra-large Scale Integration, Marseille, France, July 9-10, 2015.
  18. "Crystalline Structure and Chemical Reaction of Ti Thin Layer on Highly Oriented Pyrolytic Graphite", O. Nakatsuka, K. Hisada, S. Oida, A. Sakai, and S. Zaima, Advanced Metallization Conference 2015 (ADMETAplus): 25th Asian Session, Seoul, Korea, Sept. 16-18, 2015.
  19. "Influence of in-situ Sb-Doping on Crystalline and Electrical Characteristics of n-type Ge1-xSnx Epitaxial Layer", J. Jeon, T. Asano, W. Takeuchi, M. Kurosawa, O. Nakatsuka, and S. Zaima, International Conference on Solid State Devices and Materials (SSDM2015), Sapporo, Japan, Sept. 27-30, 2015.
  20. "Impact of ultra-high Sn content SnxGe1 −x interlayeron reducing Schottky barrier height at metal/n-Ge interface", A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima, International Conference on Solid State Devices and Materials (SSDM2015), Sapporo, Japan, Sept. 27-30, 2015.
  21. [Invited] "Crystal Growth of GeSn-related Group-IV Thin Films for Integrating on Si Nanoelectronics Platform", S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, and M. Sakashita, International Conference on Solid State Devices and Materials (SSDM2015), Sapporo, Japan, Sept. 27-30, 2015.
  22. "Influence of Precursor Gas on SiGe Epitaxial Material Quality in Terms of Structural and Electrical Defects", S. Ike, E. Simoen, Y. Shimura, A. Hikavyy, W. Vandervorst, R. Loo, W. Takeuchi, O. Nakatsuka, and S. Zaima, International Conference on Solid State Devices and Materials (SSDM2015), Sapporo, Japan, Sept. 27-30, 2015.
  23. "Effect of Nitridation for SiO2/SiC Interface on Defects Properties near Conduction Band Edge", W. Takeuchi, K. Yamamoto, M. Sakashita, T. Kanemura, O. Nakatsuka, and S. Zaima, International Conference on Solid State Devices and Materials (SSDM2015), Sapporo, Japan, Sept. 27-30, 2015.
  24. [Invited] "Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits", S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, and M. Sakashita, The 228th Electrochemical Society Meeting, Phoenix, USA, Oct. 11-16, 2015.
  25. "Influence of Atomic Layer Deposition Temperature of GeO2 Layer on Electrical Properties of Ge Gate Stack", M. Kanematsu, S. Shibayama, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima, 2015 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY - (IWDTF2015), Tokyo, Japan, Nov. 2-4, 2015.
  26. "Evaluation of Energy Band Structure of Si1-xSnx by Density Functional Theory Calculation and Photoelectron Spectroscopy", Y. Nagae, S. Shibayama, M. Kurosawa, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi, and S. Zaima, 2015 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY - (IWDTF2015), Tokyo, Japan, Nov. 2-4, 2015.
  27. "Recent Progress of Silicon Tin Alloys for Advanced Semiconductor Devices", M. Kurosawa, O. Nakatsuka, and S. Zaima, The first International Workshop on Advanced Nanomaterials for Future Electron Devices 2015 (IWAN2015), Nagoya, Japan, Nov. 7-8, 2015.
  28. "Crystal Growth and Energy Band Engineering of Group-IV Semiconductor Thin Films for Nanoelectronic Applications", O. Nakatsuka, M. Kurosawa, W. Takeuchi, Y. Shimura, M. Sakashita, and S. Zaima, The first International Workshop on Advanced Nanomaterials for Future Electron Devices 2015 (IWAN2015), Nagoya, Japan, Nov. 7-8, 2015.
  29. "Electrical characteristics of Ge pn-junction diodes prepared by using liquid immersion laser doping", K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima, International Symposium on EcoTopia Science 2015 (ISETS '15), Nagoya, Japan, Nov. 27-29, 2015.
  30. "Control of Schottky Barrier Height at Metal/Ge Interface by SnxGe1−x Interlayer", A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima, International Symposium on EcoTopia Science 2015 (ISETS '15), Nagoya, Japan, Nov. 27-29, 2015.
  31. "Characterization of Electrically Active Defects in Epitaxial GeSn/n-Ge Junctions", W. Takeuchi, T. Asano, Y. Inuzuka, M. Sakashita, O.Nakatsuka, and S. Zaima, International Symposium on EcoTopia Science 2015 (ISETS '15), Nagoya, Japan, Nov. 27-29, 2015.
  32. "Calculation of Si1−xSnx Energy Band Structures by using Density Functional Theory Considering Atomic Configuration", Y. Nagae, M. Kurosawa, S. Shibayama, O. Nakatsuka, S. Zaima, International Symposium on EcoTopia Science 2015 (ISETS '15), Nagoya, Japan, Nov. 27-29, 2015.
  33. "Silicon-Tin Semiconductors for Near-Infrared Optoelectronic Device Applications", M. Kurosawa, M. Kato, O. Nakatsuka, and S. Zaima, International Symposium on EcoTopia Science 2015 (ISETS '15), Nagoya, Japan, Nov. 27-29, 2015.
  34. "X-ray Microdiffraction Characterization of Local Strain Distribution in GeSn/Ge Nanostructures", S. Ike, O. Nakatsuka, Y. Moriyama, M. Kurosawa, N. Taoka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima, International Symposium on EcoTopia Science 2015 (ISETS '15), Nagoya, Japan, Nov. 27-29, 2015.
  35. "Schottky Barrier Engineering by Epitaxial Metal Germanide / Germanium Contacts", O. Nakatsuka, Y. Deng, A. Suzuki, M. Sakashita, and S. Zaima, International Symposium on EcoTopia Science 2015 (ISETS '15), Nagoya, Japan, Nov. 27-29, 2015.
  36. "Si and Ge Ultrathin Films by Ag-Induced Layer-Exchange Growth", M. Kurosawa, A. Ohta, M. Araidai, and S. Zaima, 23rd International Colloquium on Scanning Probe Microscopy (ICSPM23), Niseko, Japan, Dec. 10-12, 2015.

2014
  1. "Formation and Electrical Property of Epitaxial NiGe/Ge(110) Schottky Contacts", Y.S. Deng, O. Nakatsuka, N. Taoka, and Shigeaki Zaima, 7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", Sendai, Japan, Jan. 27-28, 2014.
  2. "Characterization of Crystalline Structures of SiGe Substrate Formed by Traveling Liquidus-Zone Method and Fabrication of Strained Ge Layer", T. Yamaha, O. Nakatsuka, N. Taoka, K. Kinoshita, S. Yoda, and S. Zaima, 7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar" Atomically Controlled Processing for Ultralarge Scale Integration", Sendai, Japan, Jan. 27-28, 2014.
  3. "Substrate Orientation Dependence of Crystalline Structures of Epitaxial GeSn Layers", T. Asano, S. Kidowaki, M. Kurosawa, N. Taoka, O. Nakatsuka, and S. Zaima, 7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar" Atomically Controlled Processing for Ultralarge Scale Integration", Sendai, Japan, Jan. 27-28, 2014.
  4. "Sn-assisted low temperature crystallization of polycrystalline Ge1-xSnx thin-films on insulating surfaces", M. Kurosawa, T. Yamaha, W. Takeuchi, N. Taoka, O. Nakatsuka, H. Ikenoue, and S. Zaima, 7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar" Atomically Controlled Processing for Ultralarge Scale Integration", Sendai, Japan, Jan. 27-28, 2014.
  5. "Strain Distributions at Edge of Corner in Bonded Si in Chip-On-Wafer Structures", N. Taoka, O. Nakatsuka, Y. Mizushima, H. Kitada, Y. S. Kim, T. Nakamura, T. Ohbac, and S. Zaima, Materials for Advanced Metallization Conference 2014, Chemnitz, Germany, March 2-5, 2014.
  6. "Formation and Electrical Properties of Metal/Ge1-xSnx Contacts", O. Nakatsuka, A. Suzuki, K. Kato, Y. S. Deng, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, and S. Zaima, 14th International Workshop on Junction Technology (IWJT 2014), Shanghai, China, May 18-20, 2014.
  7. "Low temperature growth of SiSn polycrystals with high Sn contents on insulating layers", M. Kurosawa, M. Kato, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima, 7th International SiGe Technology and Device Meeting (ISTDM2014), Singapore, June 1-4, 2014.
  8. "Impact of crystalline structure on electrical property of NiGe/Ge contact", D. Yunsheng, O. Nakatsuka, N. Taoka, and S. Zaima, 7th International SiGe Technology and Device Meeting (ISTDM2014), Singapore, June 1-4, 2014.
  9. "Growth and crystalline properties of Ge1-x-ySnxCy ternary alloy thin films on Ge(001) substrate", K. Terasawa, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, E. Kamiyama, R. Matsutani, R. Suwa, K. Kashima, K. Izunome, K. Sueoka, and S. Zaima, 7th International SiGe Technology and Device Meeting (ISTDM2014), Singapore, June 1-4, 2014.
  10. [Invited] "Crystal growth of Sn-related group-IV alloy thin films for advanced silicon nanoelectronics", S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, T. Asano, T. Yamaha, and W. Takauchi, 7th International SiGe Technology and Device Meeting (ISTDM2014), Singapore, June 1-4, 2014.
  11. "Epitaxial growth and crystalline properties of Ge1-x-ySixSny Layers on Ge(001) Substrates", T. Asano, T. Terashima, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, 7th International SiGe Technology and Device Meeting (ISTDM2014), Singapore, June 1-4, 2014.
  12. "Impact of Sn incorporation on low temperature growth of polycrystalline-Si1-xGex layers on Insulators", T. Yamaha, T. Ohmura, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, 7th International SiGe Technology and Device Meeting (ISTDM2014), Singapore, June 1-4, 2014.
  13. "Crystalline Growth and Characterization of Group-IV Ternary Alloy Thin Films for Solar Cell", T. Yamaha, K. Terasawa, T. Terashima, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima, Grand Renewable Energy 2014 International Conference and Exhibition, Tokyo, Japan, July 27-Aug. 1, 2014.
  14. "Mobility behavior of Si1-x-yGexSny polycrystals grown on insulators", T. Ohmura, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima, The 15th IUMRS-International Conference in Asia (IUMRS-ICA 2014), Fukuoka, Japan, Aug. 24-30, 2014.
  15. "Transformation of Defects Structure in Germanium by Sn Ion Implantation", W. Takeuchi, N. Taoka, M. Sakashita, O. Nakatsuka, and S. Zaima, The 15th IUMRS-International Conference in Asia (IUMRS-ICA 2014), Fukuoka, Japan, Aug. 24-30, 2014.
  16. "Electrically Active Defects in GeSnSi/Ge Junctions Formed at Low Temperature", N. Taoka, T. Asano, T. Yamaha, T. Terashima, S. Asaba, O. Nakatsuka, P. Zaumseil, G. Capellini, T. Schroeder, and S. Zaima, International Conference on Solid State Devices and Materials (SSDM2014), pp. 8-9, Tsukuba, Japan, Sept. 8-11, 2014.
  17. "Formation and Energy Band Engineering of Ternary Alloy Ge1-x-ySnxCy Layers", T. Yamaha, H. Oda, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, International Conference on Solid State Devices and Materials (SSDM2014), pp. 552-553, Tsukuba, Japan, Sept. 8-11, 2014.
  18. "Impact of Hydrogen Surfactant Epitaxy and Annealing on Crystallinity of Epitaxial Ge1−xSnx Layers", T. Asano, N. Taoka, K. Hozaki, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima, International Conference on Solid State Devices and Materials (SSDM2014), pp. 554-555, Tsukuba, Japan, Sept. 8-11, 2014.
  19. "Operations of CMOS Inverter and Ring Oscillator Composed of  Ultra-Thin Body Poly-Ge p- and n-MISFETs for Stacked Channel 3D-IC ", Y. Kamata, M. Koike, E. Kurosawa, M. Kurosawa, H. Ota, O. Nakatsuka, S. Zaima, and T. Tezuka, International Conference on Solid State Devices and Materials (SSDM2014), pp. 668-669, Tsukuba, Japan, Sept. 8-11, 2014.
  20. "Sub-300oC fabrication of poly-GeSn junctionless tri-gate p-FETs enabling sequential 3D integration of CMOS circuits", M. Kurosawa, Y. Kamata, H. Ikenoue, N. Taoka, O. Nakatsuka, T. Tezuka, and S. Zaima, International Conference on Solid State Devices and Materials (SSDM2014), pp. 684-685, Tsukuba, Japan, Sept. 8-11, 2014.
  21. [Invited] "Challenges and Developments in GeSn Process Technology for Si Nanoelectronics", S. Zaima, O. Nakatsuka, N. Taoka, K. Kato, W. Takeuchi, and M. Sakashita, 2014 ECS and SMEQ Joint International Meeting, Cancun, Mexcio, Oct. 5-9, 2014.
  22. [Invited] "Epitaxial Growth of GeSn Layers on (001), (110), and (111) Si and Ge Substrates", O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, W. Takeuchi, and S. Zaima, 2014 ECS and SMEQ Joint International Meeting, Cancun, Mexcio, Oct. 5-9, 2014.
  23. "Poly & Epitaxial Crystallization of Silicon-Tin Binary Alloys for Future Optoelectronics", M. Kurosawa, M. Kato, K. Takahashi, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima, International Conference on Thin Films 2014 (ICTF2014), Dubrovnik, Croatia, Oct. 13-16, 2014.
  24. "Formation of Epitaxial NiGe Layer on Ge(001) Substrate and Influence of Interface Structure on Schottky Barrier Height", O. Nakatsuka, Y. Deng, M. Sakashita, and S. Zaima, Advanced Metallization Conference 2014: 24th Asian Session IWAPS Joint Conference, Tokyo, Japan, Oct. 22-24, 2014.
  25. "Low Schottky barrier height contacts with Sn electrode for various orientation n-Ge substrates", A. Suzuki, Y. Deng, S. Shibayama, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima, Advanced Metallization Conference 2014: 24th Asian Session IWAPS Joint Conference, Tokyo, Japan, Oct. 22-24, 2014.
  26.  "Development of metal/Ge contacts for engineering Schottky barriers", O. Nakatsuka, Y. Deng, A. Suzuki, S. Shibayama, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, and S. Zaima, Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration", Leuven, Belgium, Nov. 13-14, 2014.
  27. "Study of Local Strain Distribution in Ge1−xSnx/Ge Fine Structures by using Synchrotron Xray Microdiffraction", S. Ike, Y. Moriyama, M.Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima, Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration", Leuven, Belgium, Nov. 13-14, 2014.
  28. "Growth and Characterization of Ternary Alloy Ge1-x-ySnxCy Layers", T. Yamaha, H. Oda, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration", Leuven, Belgium, Nov. 13-14, 2014.
  29. "Hydrogen Surfactant Epitaxy of Ge1−xSnx Layers", T. Asano, N. Taoka, K. Hozaki, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima, Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration", Leuven, Belgium, Nov. 13-14, 2014.
  30. "Interplay between metallization and strain relaxation in epitaxial GeSn layers", A. Vantomme, N. Santos, K. van Stiphout, O. Nakatsuka, M. Adachi,
    Y. Shimura, R. Loo, S. Zaima, C. Detavernier, K. Temst, and C.M. Comrie,
    Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration", Leuven, Belgium, Nov. 13-14, 2014.
  31. "Growth and characterization of Si1-x-ySnxCy ternary alloy thin films for solar cell application", T. Yamaha, H. Oda, M. Kurosawa, W. Takeuchi, O. Nakatsuka, and S. Zaima, The 6th World Conferenceon Photovoltaic Energy Conversion (WCPEC-6), Kyoto, Japan, Nov. 23-27, 2014. 

2013
  1. "Defects introduced in germanium substrate by reactive ion etching", Kusumandari, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, S. Zaima, 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013), Nagoya Univ., Japan, Jan. 28-Feb. 1, 2013.
  2. "Control of Al2O3/Ge interfacial structures by post oxidation technique using oxygen radical", K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013), Nagoya Univ., Japan, Jan. 28-Feb. 1, 2013.
  3. [Invited] "Feasibility of Ge Device Fabrication by Low Temperature Processes on ULSI Circuits", N. Taoka, M. Kurosawa, K. Kato, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, Sendai, Japan, Feb. 22-23, 2013.
  4. "Low temperature crystallization of group-IV semiconductors induced by eutectic metals (Al, Sn)", M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao, and S. Zaima, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, Sendai, Japan, Feb. 22-23, 2013.
  5. "Control of Interfacial Reactions in Al2O3/Ge Structures", S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, Sendai, Japan, Feb. 22-23, 2013.
  6. "Crystalline Properties of Ge1-xSnx Epitaxial Layers on Ge(110)", T. Asano , M. Kurosawa, N. Taoka, O. Nakatsuka, and S. Zaima, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, Sendai, Japan, Feb. 22-23, 2013.
  7. "Growth and Characterization of Ge1-x-ySixSny Epitaxial Layers for Solar Cell", T. Yamaha, O. Nakatsuka, N. Taoka, W. Takeuchi, and S. Zaima, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, Sendai, Japan, Feb. 22-23, 2013.
  8. "Crystalline and Electrical Properties of Ni germanium/Ge(110) Contacts", O. Nakatsuka, J. Yokoi, Y.S. Deng, N. Taoka and S. Zaima, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, Sendai, Japan, Feb. 22-23, 2013.
  9. "Periodic Strain Undulation around Through Si Vias in Wafer-On-Wafer Structures", N. Taoka, O. Nakatsuka, Y. Mizushima, H. Kitadab,, Y. S. Kim, T. Nakamura, T. Ohba, and S. Zaima, Materials for Advanced Metallization, Leuven, Belgium, March 10-13, 2013.
  10. "A comparative study of metal germanide formation on Ge1-xSnx ", J. Demeulemeester, A. Schrauwen, K. Van Stiphout, O. Nakatsuka, M. Adachi, Y. Shimura, S. Zaima, C. M. Comrie, C. Detavernier, K. Temst, and A. Vantommea, Materials for Advanced Metallization, Leuven, Belgium, March 10-13, 2013.
  11. "Crystalline Structures and Electrical Property of Epitaxial Ni Germanide Layers Formed on Ge(110) Substrate", Y. S. Deng, J. Yokoi, O. Nakatsuka, N. Taoka, and Shigeaki Zaima, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), Fukuoka, Japan, June 2-6, 2013.
  12. "Lateral Growth Enhancement of Poly-Ge1-xSnx on SiO2 using a Eutectic Reaction", M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao, and S. Zaima, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), Fukuoka, Japan, June 2-6, 2013.
  13. "Incorporation of a Vacancy with an Sn Atom in Epitaxial Ge1-xSnx Film Growth at Lower Temperature", E. Kamiyama, K. Sueoka, O. Nakatsuka, N. Taoka, S. Zaima, K. Izunome, and K. Kashima, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), Fukuoka, Japan, June 2-6, 2013.
  14. "Electrical Activity of Threading Dislocations and Defect Complexes in GeSn Epitaxial Layers", S. Gupta, E. Simoen, T. Asano, O. Nakatsuka, F. Gencarelli, Y. Shimura, A. Moussa, R. Loo, and Shigeaki Zaima, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), Fukuoka, Japan, June 2-6, 2013.
  15. "Formation and Characterization of Locally Strained Ge1-xSnx/Ge Microstructures", S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and Shigeaki Zaima,The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), Fukuoka, Japan, June 2-6, 2013.
  16. "Crystalline Phase Control of Pr-Oxide Films by Regulating Oxidant Partial Pressure and Si Diffusion", K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima,The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), Fukuoka, Japan, June 2-6, 2013.
  17. "Epitaxial Growth of Strained Ge Layer on Si1-xGex Substrate Formed with Traveling Liquidus-Zone Method", T. Yamaha, O. Nakatsuka, N. Taoka, K. Kinoshita, S. Yoda, and S. Zaima, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), Fukuoka, Japan, June 2-6, 2013.
  18. "Influence of Ge Substrate Orientation on Crystalline Structures of Ge1-xSnx Epitaxial Layers", T. Asano, S. Kidowaki, M. Kurosawa, N. Taoka, O. Nakatsuka, and S. Zaima, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), Fukuoka, Japan, June 2-6, 2013.
  19. "Formation of Tetragonal ZrO2 Thin Film by ALD Method", K. Kato, T. Saito, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), Fukuoka, Japan, June 2-6, 2013.
  20. "Impacts of AlGeO Formation by Post Thermal Oxidation of Al2O3/Ge Structure on Interface Properties", S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), Fukuoka, Japan, June 2-6, 2013.
  21. "Potential of GeSn and GeSiSn for Future Nanoelectronic Device Applications", S. Zaima, JSPS Core-to-Core Program Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", Fukuoka, Japan, June 6, 2013.
  22. "Physical Factor of Other Element Incorporation for Tetragonal ZrO2 Formation", K. Kato, T. Saito, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima,  NIMS Conference 2013 Structure Control of Atomic / Molecular Thin Films and Their Applciations,Tsukuba, Japan, July 1-3.
  23. "Reduction of Schottky Barrier Height for n-type Ge Contact by using Sn Electrode", A. Suzuki, Shunsuke Asaba, J. Yokoi, O. Nakatsuka, M. Kurosawa, K. Kato, M. Sakashita, N. Taoka, and S. Zaima, International Conference on Solid State Devices and Materials (SSDM2013), Fukuoka, Japan, Sept. 24-27, 2013.
  24. "Large grain growth of poly-GeSn on insulator by pulsed laser annealing in water", M. Kurosawa, N. Taoka, H. Ikenoue, O. Nakatsuka, and S. Zaima, International Conference on Solid State Devices and Materials (SSDM2013), Fukuoka, Japan, Sept. 24-27, 2013.
  25. "Interaction of Sn atoms with Defects Introduced by Ion Implantation in Ge Substrate", T. Arahira, M. Fukudome, N. Taoka, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima, International Conference on Solid State Devices and Materials (SSDM2013), Fukuoka, Japan, Sept. 24-27, 2013.
  26. "Engineering of Energy Band Structure with Epitaxial Ge1-x-ySixSny/n-Ge Hetero Junctions for Solar Cell Applications", S. Asaba, T. Yamaha, M. Kurosawa, M. Sakashita, N. Taoka, O. Nakatsuka, S. Zaima, International Conference on Solid State Devices and Materials (SSDM2013), Fukuoka, Japan, Sept. 24-27, 2013.
  27. "Formation and Crystalline Structure of Ni Silicides on Si(110) Substrate", O. Nakatsuka, M. Hasegawa, K. Kato, N. Taoka, and S. Zaima, Advanced Metallization Conference 2013 (ADMETA Plus 2013), Tokyo, Japan, Oct. 7-10, 2013.
  28. "Thermal Stability of Epitaxial NiGe Layers Formed on Ge(110) Substrate", Y. S. Deng, O. Nakatsuka, N. Taoka, and S. Zaima, Advanced Metallization Conference 2013 (ADMETA Plus 2013), Tokyo, Japan, Oct. 7-10, 2013.
  29. "Fluctuation of Lattice Spacing around Trough Si Vias in Wafer -on -wafer Structures", N. Taoka, O. Nakatsuka, Y. Mizushima, H. Kitada, Y. S. Kim, T. Nakamura, T. Ohba, and S. Zaima, Advanced Metallization Conference 2013 (ADMETA Plus 2013), Tokyo, Japan, Oct. 7-10, 2013.
  30. "Fluctuation of Lattice Spacing around Trough Si Vias in Wafer -on -wafer Structures", N. Taoka, O. Nakatsuka, Y. Mizushima, H. Kitada, Y. S. Kim, T. Nakamura, T. Ohba, and S. Zaima, Advanced Metallization Conference(AMC) Conference, Albany, USA, Oct. 21-23, 2013.
  31. "Stabilization for Higher-k Films with Meta-Stable Crystalline Structure", K. Kato, T. Saito, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. ZaimaJSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration", Frankfurt (Oder), Germany, Oct. 24-25, 2013.
  32. "Interaction between Sn atoms and Defects Introduced by Ion Implantation in Ge Substrate", N. Taoka, M. Fukudome, T. Arahira, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima, JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration", Frankfurt (Oder), Germany, Oct. 24-25, 2013.
  33. [Invited] "Heteroepitaxial Growth of Sn-Related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications: Challenges and Opportunities",  O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha,  M. Kurosawa, , M. Sakashita, S. Zaima, , 224th The Electrochemical Society (ECS) Meeting, San Francisco, USA, Oct. 27-Nov. 1, 2013.
  34. "Characterization of Local Strain Structures in Heteroepitaxial Ge1−xSnx/Ge Microstructures by Using Microdiffraction Method ", S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima, 224th The Electrochemical Society (ECS) Meeting, San Francisco, USA, Oct. 27-Nov. 1, 2013.
  35. "Reduction of Interface States Density Due to Post Oxidation with Formation of AlGeO Layer at Al2O3/Ge Interface", S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi , N. Taoka, O. Nakatsuka, and S. Zaima, 224th The Electrochemical Society (ECS) Meeting, San Francisco, USA, Oct. 27-Nov. 1, 2013.
  36. "Quantitative Guideline for Formation of Ge MOS Interface with Low Interface State Density", S. Shibayama, K. Kato, N. Taoka, M. Sakashita, O. Nakatsuka, and S. Zaima, 2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY -, pp. 7-8, Tokyo, Japan, Nov. 7-9, 2013.
  37. "Interface Properties of Al2O3/Ge MOS Structures with Thin Ge Oxide Interfacial Layer Formed by Pulsed MOCVD", T. Yoshida, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, W. Takeuchi, O. Nakatsuka, and S. Zaima, 2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY -, pp. 9-10, Tokyo, Japan, Nov. 7-9, 2013.
  38. "Robustness of Sn Precipitation During Thermal Process of Ge1–xSnx", K. Kato, T. Asano, N. Taoka, M. Sakashita, O. Nakatsuka, and S. Zaima, 2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY -,  pp. 99-100, Tokyo, Japan, Nov. 7-9, 2013.
  39. [Invited] "Sn-related Group-IV Semiconductor Materials for Electronic and Optoelectronic Applications", O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima, The 3rd International Conference on Nanoteck & Expo, Las Vegas, USA, Dec. 2-4, 2013.
  40. [Invited] "Development of Ge1-xSnx and Ge1-x-ySixSny Thin Film Materials for Future Electronic Applications", O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, K. Kato, W. Takeuchi, M. Sakashita, and S. Zaima, International Conference on THERMEC' 2013, Las Vegas, USA, Dec. 2-6, 2013.

2012
  1. "The effect of light exposure on the electrical properties of GeO2/Ge gate stack", Kusumandari, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima, 4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2012), Chubu Univ., Japan, March 4-8, 2012.
  2. "Effect of N Radical Process on Interfacial and Electrical Properties of Al2O3/Ge Structure", K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima, The 5th International Conference on PLasma-NanoTechnology & Science (IC-PLANTZ2012), Inuyama, Japan, March 9-10, 2012.
  3. "Comprehensive Characterization of Local Strain around Trough Silicon Via Interconnects for 3-Dimentional Devices", O. Nakatsuka, H. Kitada, Y. S. Kim, Y. Mizushima, T. Nakamura, T. Ohba, and S. Zaima, The 12th International Workshop on Stress-Induced Phenomena in Microelectronics, Kyoto, Japan, May 29, 2012.
  4. "Epitaxial Growth and Anisotropic Strain Relaxation of Ge1-xSnx Layers on Ge(110) Substrates", T. Asano, Y. Shimura, N. Taoka, O. Nakatsuka, and S. Zaima, The 6th International SiGe Technology and Device Meeting (ISTDM2012), No. 4.3, Barkeley, USA, June 4-6, 2012.
  5. "Effect of Gate Metal Electrode on Chemical Bonding State in Metal/Pr-oxide/Ge Gate Stack Structure", K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, The 6th International SiGe Technology and Device Meeting (ISTDM2012), No. 7.4, Barkeley, USA, June 4-6, 2012.
  6. "Optical Properties of Ge1-xSnx Epitaxial Layers with Very High Sn Contents", M. Nakamura, Y. Shimura, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, The 6th International SiGe Technology and Device Meeting (ISTDM2012), No. 10.2, Barkeley, USA, June 4-6, 2012
  7. [Invited] "Material properties and applications of Ge1-xSnx alloys for Ge Nanoelectronics", O. Nakatsuka, Y. Shimura, W. Takeuchi, and S. Zaima, The 6th International SiGe Technology and Device Meeting (ISTDM2012), No. 12.1, Barkeley, USA, June 4-6, 2012.
  8. "Electrical Characterization of p-Ge1-xSnx/p-Ge and p-Ge1-xSnx/n-Ge Heterostructures by Numerical
    Simulation of Admittance Spectroscopy", B. Baert, D. Y. N. Truonga, O. Nakatsuka, S. Zaima, and N. D. Nguyen, The 6th International SiGe Technology and Device Meeting (ISTDM2012), No. P1.16, Barkeley, USA, June 4-6, 2012
  9. "Control of Interfacial and Electrical Properties of Metal/Pr-oxide/Ge Gate Stack Structures", K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima, CNSE and JSPS Core-to-Core Program Joint Seminar, No. 9, Albany, USA, June 8, 2012.
  10. "Epitaxial Growth and Characterization of GeSn Layers on Ge(110) and Si(110) Substrates", T. Asano, S. Kidowaki, Y. Shimura, N. Taoka, O. Nakatsuka, S. Zaima, CNSE and JSPS Core-to-Core Program Joint Seminar, No. 10, Albany, USA, June 8, 2012.
  11. "GeSn Alloy for Nanoelectronic and Optoelectronic Devices", O. Nakatsuka, Y. Shimura, W. Takeuchi, N. Taoka and S. Zaima, CNSE and JSPS Core-to-Core Program Joint Seminar, No. 12, Albany, USA, June 8, 2012.
  12. "Effects of Light and Air Exposures on Electrical Properties of GeO2/Ge and Al2O3/Ge Gate Stack Structures", Kusumandari, W. Takeuchi, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima, 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2012), Naha, Japan, June 27-29, 2012.
  13. [Invited] "Potential of GeSn Alloys for Application to Si Nanoelectronics", S. Zaima, Y. Shimura, M. Nakamura, W. Takeuchi, M. Sakashita, O. Nakatsuka, 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2012), Naha, Japan, June 27-29, 2012.
  14. "Epitaxial Growth and Characterizations of Ge1-xSnx and Ge1-x-ySixSny Thin Layers for Nanoelectronic and Optoelectronic Applications", O. Nakatsuka, N. Taoka, M. Sakashita, W. Takeuchi, S. Zaima, University of Vigo and JSPS Core-to-Core Program Joint Seminar, Vigo, Spain, Sept. 4-6, 2012.
  15. "High Mobility Poly-GeSn Layer Formed by Low Temperature Solid Phase Crystallization", W. Takeuchi, N. Taoka, M. Kurosawa, M. Fukutome, M. Sakashita, O. Nakatsuka, and S. Zaima, International Conference on Solid State Devices and Materials (SSDM2012), Kyoto, Japan, Sept. 25-27, 2012.
  16. "Impact of Sn corporation on Epitaxial Growth of Ge Layers on Si(110) Substrates", S. Kidowaki, T. Asano, Y. Shimura, N. Taoka, O. Nakatsuka, and S. Zaima, International Conference on Solid State Devices and Materials (SSDM2012), Kyoto, Japan, Sept. 25-27, 2012.
  17. "Interfacial Reaction Mechanism in Al2O3/Ge Structure by Oxygen Radical", K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, International Conference on Solid State Devices and Materials (SSDM2012), Kyoto, Japan, Sept. 25-27, 2012.
  18. "In situ Sb doping in Ge1-xSnx Epitaxial Layers with High Sn Contents", K. Hozaki, M. Nakamura, Y. Shimura, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, IUMRS International Conference on Electronic Materials (IUMRS-ICEM2012), Yokohama, Japan, Sept. 23-28, 2012.
  19. "Epitaxial Growth of Ge1-xSnx Layers on (110)-oriented Si and Ge Substrates", T. Asano, S. Kidowaki, Y. Shimura, N. Taoka, O. Nakatsuka, and S. Zaima, IUMRS International Conference on Electronic Materials (IUMRS-ICEM2012), Yokohama, Japan, Sept. 23-28, 2012.
  20. "Thermal Oxidation Mechanism of Ge through Al2O3 Layer Formed on Ge Substrate", S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, IUMRS International Conference on Electronic Materials (IUMRS-ICEM2012), Yokohama, Japan, Sept. 23-28, 2012.
  21. "Importance of Si Bandbending at Zero Bias Condition for Schottky Barrier Height Control at Metal/Si Interfaces with Ultra-thin Al2O3 Layer", H. Matsushita, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka and S. Zaima, IUMRS International Conference on Electronic Materials (IUMRS-ICEM2012), Yokohama, Japan, Sept. 23-28, 2012.
  22. "Electrical Properties of Epitaxially Grown p+-Ge1-xSnx/n-Ge Diodes", S. Asaba, J. Yokoi, H. Matsuhita, D. Yunsheng, N. Taoka, O. Nakatsuka, and S. Zaima, IUMRS International Conference on Electronic Materials (IUMRS-ICEM2012), Yokohama, Japan, Sept. 23-28, 2012.
  23. [Invited] "Technology of Ge1-xSnx Thin Films for Future Si Nanoelectronics", O. Nakatsuka and S. Zaima, The 6th Kentingan Physics Forum: International Conference on Physics and Its Applications (ICOPIA), Solo, Indonesia, Oct. 3, 2012.
  24. [Invited]  "Growth and Optical Properties of Ge1-xSnx Alloy Thin Films with a High Sn Content", S. Zaima, O. Nakatsuka, M. Nakamura, W. Takeuchi, Y. Shimura, and N. Taoka, The PRiME 2012 Joint International (222nd) ECS Meeting, Honolulu, USA, Oct. 8-12, 2012.
  25. "Growth and Characterization of Heteroepitaxial Layers of Ge1-x-ySixSny Ternary Alloy", T. Yamaha, O. Nakatsuka, S. Takeuchi, W. Takeuchi, N. Taoka, K. Araki, K. Izunome, and S. Zaima, The PRiME 2012 Joint International 222nd ECS Meeting, Honolulu, USA, Oct. 8-12, 2012.
  26. "Impedance Spectroscopy of GeSn/Ge Heterostructures by a Numerical Method", B. Baert, O. Nakatsuka, S. Zaima, and N. Nguyen, The PRiME 2012 Joint International 222nd ECS Meeting, Honolulu, USA, Oct. 8-12, 2012.
  27. "Formation and Stress Characterization of NiGe/Ge(110) and Ge(001) Contacts", Y. Deng, J. Yokoi, O. Nakatsuka, and S. Zaima, Advanced Metallization Conference 2012: The 22nd Asian Session, Tokyo, Japan, Oct. 23-25, 2012.

2011
  1. "Influence of Light Radiation on Electrical Properties of Al2O3/Ge and GeO2/Ge Gate Stacks in Nitrogen Plasma", Kusumandari, W. Takeuchi, K. Kato, M. Sakashita, O. Nakatsuka, S. Zaima, 2011 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology, p. 27-28, Tokyo, Japan, Jan. 20-21, 2011.
  2. "Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure using Radical Nitridation Technique", K. Kato, S. Kyogoku, M. Sakashita, W. Takeuchi, H. Kondo, O. Nakatsuka, S. Zaima, 2011 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology, p. 71-72, Tokyo, Japan, Jan. 20-21, 2011.
  3. "Characterization of Damages of Al2O3/Ge Gate Stacks Structure Induced with Light Radiation during Plasma Nitridation", Kusumandari, W. Takeuchi, K. Kato, M. Sakashita, O. Nakatsuka, S. Zaima, 3rd International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials (ISPLasma2011), p. 43, Nagoya, Japan, Mar. 6-9, 2011.
  4. "Control of Surface and Interfacial Structure by Radical Nitridation Technique for Ge MOS Transistors", K. Kato, H. Kondo, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima, The 4th International Conference on PLAsma-Nano Technology & Science, p. 43, Gifu, Japan, Mar. 10-12, 2011.
  5. "Epitaxial Growth of Ge1-xSnx for Strained Ge CMOS Devices", S. Zaima, Y. Shimura, S. Takeuchi, and O. Nakatsuka, THERMEC' 2011 (International Conference on Processing & Manufacturing of Advanced Materials), Quebec, Canada, Aug. 1-5, 2011.
  6. "Growth of Ge1-xSnx heteroepitaxial layers with very high Sncontents on InP(001) substrates", M. Nakamura, Y. Shimura, S. Takeuchi , O. Nakatsuka, and S. Zaima,7th International Conference on Si Epitaxy and Heterostructures, Leuven, Belgium, Aug. 28-Sep.1, 2011.
  7. "In-situ Ga Doping to Fully Strained Ge1-xSnx Heteroepitaxial Layers Grown on Ge(001) Substrates", Y. Shimura, S. Takeuchi, O. Nakatsuka, B. Vincent, F. Gencarelli, T. Clarysse, W. Vandervorst, M. Caymax, R. Loo, and S. Zaima, 7th International Conference on Si Epitaxy and Heterostructures, Leuven, Belgium, Aug. 28-Sep.1, 2011.
  8. "Low Temperature Formation of Si1-x-yGexSny-on-Insulator Structures by Using Solid-Phase Mixing of Ge1-zSnz/Si-on-Insulator Substrates", K. Mochizuki, T. Yamaha, Y. Shimura, O. Nakatsuka, and S. Zaima, 7th International Conference on Si Epitaxy and Heterostructures, Leuven, Belgium, Aug. 28-Sep.1, 2011.
  9. "Improvement of Al2O3 Interfacial Properties by O2 Annealing", S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima, 7th International Conference on Si Epitaxy and Heterostructures, Leuven, Belgium, Aug. 28-Sep.1, 2011.
  10. "Homogeneous Si0.5Ge0.5 Bulk Crystal Growth as Substrates for Strained Ge Thin Films by the Traveling Liquidus-Zone Method", K. Kinoshita, O. Nakatsuka, S. Yoda, and S. Zaima, 7th International Conference on Si Epitaxy and Heterostructures, Leuven, Belgium, Aug. 28-Sep.1, 2011.
  11. "MBE growth and crystalline properties of GeSn heteroepitaxial layers", Y. Shimura, 2nd GeSnWorkshop: GeSn Development and Future Applications,Leuven, Belgium, Sept. 2, 2011.
  12. "Electrical and optical properties of GeSn alloys", O. Nakatsuka, Y. Shimura, M. Adachi, M. Nakamura, and S. Zaima, 2nd GeSnWorkshop: GeSn Development and Future Applications, Leuven, Belgium, Sept. 2, 2011.
  13. "Comprehensive Study of Local Strain Structures with High Strain Resolution for Through-Silicon Via Interconnects", O. Nakatsuka, H. Kitada, Y. S. Kim, Y. Mizushima, T. Nakamura, T. Ohba, and S. Zaima, Advanced Metallization Conference 2011: 21st Asian Session, Tokyo, Japan, Sept. 13-15, 2011.
  14. "Formation and Properties of Epitaxial NiGe/Ge(110) Contacts", J. Yokoi, O. Nakatsuka, and S. Zaima, International Conference on Solid State Devices and Materials (SSDM2011), Nagoya, Japan, Sept. 28-30, 2011.
  15. "Strain and Dislocation Structures of Ge1-xSnx Heteroepitaxial Layers Grown on Ge(110) Substrates", T. Asano, Y. Shimura, O. Nakatsuka, and S. Zaima, International Conference on Solid State Devices and Materials (SSDM2011), Nagoya, Japan, Sept. 28-30, 2011.
  16. "Strained Ge Layers on SiGe(Sn) Buffer Layers Formed by Solid-phase Mixing Method", T. Yamaha, K. Mochizuki, Y. Shimura, O.Nakatsuka, and S. Zaima, International Conference on Solid State Devices and Materials (SSDM2011), Nagoya, Japan, Sept. 28-30, 2011.
  17. "Control of Defect Properties in Ge Heteroepitaxial Layers by Sn Incorporation and H2-Annealing", M. Adachi, Y. Shimura, O. Nakatsuka, and S. Zaima, International Conference on Solid State Devices and Materials (SSDM2011), Nagoya, Japan, Sept. 28-30, 2011.
  18. "Comprehensive Study of Local Strain Structures with High Strain Resolution for Through-Silicon Via Interconnects", O. Nakatsuka, H. Kitada, Y. S. Kim, Y. Mizushima, T. Nakamura, T. Ohba, and S. Zaima, Advanced Metallization Conference (AMC), San Diego, USA, Oct. 4-6, 2011.
  19. [Invited] "GeSn Technology: Impact of Sn on Ge CMOS Applications", S. Zaima, O. Nakatsuka, Y. Shimura, S. Takeuchi, B. Vincent, F. Gencarelli, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, M. Caymax, and R. Loo, 220th Electro Chemical Society Meeting, Boston, USA, Oct. 9-14, 2011.
  20. "Effect of Chemical Bonding State on Electrical Properties of Al2O3/Ge Structure", K. Kato, M Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima, The 15th International Conference on Thin Films (ICTF-15), Kyoto, Japan, Nov. 8-11, 2011.
  21. "Suppressive Effect of Interface Reaction and Water Absorption by Al Incorporation into Pr-oxide Film", W. Takeuchi, K. Furuta, K. Kato, M. Sakashita, H. Kondo, O. Nakatsuka, and S. Zaima, The 15th International Conference on Thin Films (ICTF-15), Kyoto, Japan, Nov. 8-11, 2011.
  22. [Invited] "Materials Innovation in Si Nanoelectronics", S. Zaima and O. Nakatsuka, 2011 Tsukuba Nanotechnology Symposium (TNS'11), Tsukuba, Japan, Dec. 15-17, 2011.

2010
  1. [Invited] "Potential of Ge1-xSnx alloys as high mobility channel materials and stressors", S. Takeuchi, Y. Shimura, T. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, 5th International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 67-68, Sendai, Japan, Jan. 29-30, 2010.
  2. "Microscopic characterization of Si(011)/Si(001) direct silicon bonding substrates", T. Kato, T. Ueda, Y. Ohara, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, Y. Imai, S. Kimura, and O. Sakata, 5th International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 37-38, Sendai, Japan, Jan. 29-30, 2010.
  3. "Control of Local Strain Structures by Microfabricated Shapes of Ge/Si1-xGex Layers", K. Mochizuki, T. Mizutani, O. Nakatsuka, H. Kondo, and S. Zaima, 5th International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 41-42, Sendai, Japan, Jan. 29-30, 2010.
  4. "Strain Relaxation Behavior of Ge1-xSnx Buffer Layers on Si and Virtual Ge Substrates", Y. Shimura, S. Takeuchi, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, 5th International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 43-44, Sendai, Japan, Jan. 29-30, 2010.
  5. "Crystalline Orientation Dependence of Electrical Properties on Mn Germanide/Ge(111) and (001) Schottky Contacts", T. Nishimura, O. Nakatsuka, and S. Zaima, Materials for Advanced Metallization, Mechelen, Belgium, Mar. 7-10, 2010.
  6. [Invited] "Ge1-xSnx stressors for strained-Ge CMOS",S. Takeuchi, Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, and S. Zaima, 5th International SiGe Technology Device Meeting 2010 (ISTDM2010), Stockholm, Sweden, May 24-26, 2010.
  7. "Control of Strain Relaxation Behavior of Ge1-xSnx Layers: Toward Tensile-Strained Ge Layers with Strain Value over 1%", Y. Shimura, S. Takeuchi, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, 5th International SiGe Technology Device Meeting 2010 (ISTDM2010), Stockholm, Sweden, May 24-26, 2010.
  8. "Formation of Ni(Ge1-xSnx) Layers with Solid-Phase Reaction in Ni/Ge1-xSnx/Ge Systems", T. Nishimura, Y. Shimura, S. Takeuchi, B. Vincent, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, and S. Zaima, 5th International SiGe Technology Device Meeting 2010 (ISTDM2010), Stockholm, Sweden, May 24-26, 2010.
  9. "Control of Interfacial Properties of Pr-oxide/Ge Gate Stack Structure by Introduction of Nitrogen", K. Kato, H. Kondo, M. Sakashita, O. Nakatsuka, and S. Zaima, 5th International SiGe Technology Device Meeting 2010 (ISTDM2010), Stockholm, Sweden, May 24-26, 2010.
  10. "GeSn: future applications and strategy", R. Loo, M. Caymax, B. Vincent, J. Dekoster, S. Takeuchi, O. Nakatsuka, S. Zaima, K. Temst,  and A. Vantomme, International Workshop of GeSn Developments and Future Applications, Heverlee-Leuven, Belgium, May 28, 2010. 
  11. "Epitaxial GeSn Growth using MBE", Y. Shimura, International Workshop of GeSn Developments and Future Applications, Heverlee-Leuven, Belgium, May 28, 2010.
  12. "Material Assessment for uni-axial strained Ge pMOS -1: Characterization of GeSn(B) materials", B. Vincent, Y. Shimura, S. Takeuchi, T. Nishimura, J. Demeulemeester, G. Eneman, T. Clarysse, W. Vandervorst, A. Vantomme, O. Nakatsuka, S. Zaima, J. Dekoster, M. Caymax, and R. Loo, International Workshop of GeSn Developments and Future Applications, Heverlee-Leuven, Belgium, May 28, 2010.
  13. "Material Assessment for uni-axial strained Ge pMOS-2: Formation of Ni(GeSn) Layers with Solid-Phase Reactor ", T. Nishimura, Y. Shimura, S. Takeuchi, B. Vincent, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, and S. Zaima, International Workshop of GeSn Developments and Future Applications, Heverlee-Leuven, Belgium, May 28, 2010. 
  14. "Bi-axially strained Ge grown on GeSn SRBs", O. Nakatsuka, S. Takeuchi, Y. Shimura, A. Sakai, S. Zaima, International Workshop of GeSn Developments and Future Applications, Heverlee-Leuven, Belgium, May 28, 2010.
  15. "(Si)GeSn requirements for optical device applications and solar cells", S. Takeuchi, B. Vincent, K. Temst, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, and S. Zaima, International Workshop of GeSn Developments and Future Applications, Heverlee-Leuven, Belgium, May 28, 2010.
  16. "Strained Ge and Ge1-xSnx technology for future CMOS devices ", S. Zaima, O. Nakatsuka, S. Takeuchi, Y. Shimura, A. Sakai, H. Kondo, and M. Sakashita, International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE), Tokyo, Japan, June 3-5, 2010.
  17. "Formation of Ge1-xSnx heteroepitaxial layers with high Sn content", Y. Shimura, S. Takeuchi, O. Nakatsuka, A. Sakai, and S. Zaima, International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE), Tokyo, Japan, June 3-5, 2010.
  18.  "Control of strain structure by microfabrication of Ge/Si1-xGex layers on Si(001) Substrates", K. Mochizuki, T. Mizutani, O. Nakatsuka, H. Kondo, and S. Zaima, International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE), Tokyo, Japan, June 3-5, 2010.
  19. "Dependence of electrical properties  on crystalline structures of Mn5Ge3/Ge Schottky contacts", T. Nishimura, O. Nakatsuka, S. Akimoto, and S. Zaima, International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE), Tokyo, Japan, June 3-5, 2010.
  20. "Impact of nitride interfacial layer on electrical properties of high-k/Ge stacked structures", K. Kato, H. Kondo, M. Sakashita, O. Nakatsuka, and S. Zaima, International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE), Tokyo, Japan, June 3-5, 2010.
  21. "Crystalline and electrical properties of PrAlO gate insulator films formed by atomic layer deposition", K. Furuta, W. Takeuchi, M. Sakashita, H. Kondo, O. Nakatsuka, and S. Zaima, International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE), Tokyo, Japan, June 3-5, 2010.
  22. "Nitrogen content dependence of crystalline and electrical properties of ternary transition metal gate electrodes", H. Matsushita, K. Miyamoto, K. Furumai, H. Kondo, M. Sakashita, O. Nakatsuka, and S. Zaima, International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE), Tokyo, Japan, June 3-5, 2010.
  23. "Structural change during the formation of directly bonded silicon substrates", T. Kato, T. Ueda, Y. Ohara, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, Y. Imai, S. Kimura, and O. Sakata, International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE), Tokyo, Japan, June 3-5, 2010.
  24. "Microscopic structure of directly bonded silicon substrates", T. Kato, Y. Ohara, T. Ueda, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, and S. Kimura, International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE), Tokyo, Japan, June 3-5, 2010.
  25. "Growth and Characterization of GeSn and Tensile-Strained Ge Layers for High Mobility Channels of CMOS Devices", O. Nakatsuka, Y. Shimura, S. Takeuchi, and S. Zaima, The 7th Pacific Rim International Conference on Advanced Materials and Processing, Cairns, Australia, Aug 2-6, 2010.
  26. "Effects of Al Incorporation into Pr-oxides Formed by Atomic Layer Deposition", K. Furuta, W. Takeuchi, M. Sakashita, K. Kato, H. Kondo, O. Nakatsuka, and S. Zaima, 2010 International Conference on Solid State Devices and Materials (SSDM 2010), Tokyo, Japan, Sept. 22-24, 2010.
  27. "Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy", M. Adachi, M. Sakashita, H. Kondo, W. Takeuchi, O. Nakatsuka, and S. Zaima, 2010 International Conference on Solid State Devices and Materials (SSDM 2010), Tokyo, Japan, Sept. 22-24, 2010.
  28. "Effect of Valence State of Pr on Interfacial Structure and Electrical Properties of Pr-oxide/PrON/Ge Gate Stack Structure", K. Kato, M. Sakashita, W. Takeuchi, H. Kondo, O. Nakatsuka, and S. Zaima, 2010 International Conference on Solid State Devices and Materials (SSDM 2010), Tokyo, Japan, Sept. 22-24, 2010.
  29. "Characterization of Local Strain around Through-Silicon Via Interconnects by using X-ray Microdiffraction", O. Nakatsuka, H. Kitada, Y. S. Kim, Y. Mizushima, T. Nakamura, T. Ohba, and S. Zaima, Advanced Metallization Conference 2010, Albany, USA, Oct. 5-7, 2010.
  30. [Invited] "Assessment of Ge1-xSnx Alloys for Strained Ge CMOS Devices", S. Takeuchi, Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, A. Sakai, and S. Zaima, 218th ECS Meeting, Las Vegas, USA, Oct. 10-15, 2010.
  31. "Control of Strain Relaxation Behavior of Ge1-xSnx Layers for Tensile Strained Ge Layers", Y. Shimura, S. Takeuchi, O. Nakatsuka, and S. Zaima, 218th ECS Meeting, Las Vegas, USA, Oct. 10-15, 2010.
  32. "Characterization of Local Strain around Through-Silicon Via Interconnects by using X-ray Microdiffraction", O. Nakatsuka, H. Kitada, Y. S. Kim, Y. Mizushima, T. Nakamura, T. Ohba, and S. Zaima, Advanced Metallization Conference 2010: 20th Asian Session, Tokyo, Japan, Oct. 9-22, 2010.
  33. "Formation of Palladium Silicide Thin Layers on Si (110) Substrates", R. Suryana, O. Nakatsuka, and S. Zaima, Advanced Metallization Conference 2010: 20th Asian Session, Tokyo, Japan, Oct. 9-22, 2010.
  34. [Invited] "Tensile-Strained Ge and Ge1-xSnx Layers for High-Mobility Channels in Future CMOS Devices", S. Zaima, O. Nakatsuka, Y. Shimura, S. Takeuchi, International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, Nov. 1- 4, 2010.
  35. "Study of Ge Surface Passivation using Radical Nitridation Technique for Ge Channel MOS Transistors", K. Kato, H. Kondo, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima, The 1st Korea-Japan Symposium on Surface Technology, Nov. 26, 2010, Incheon, Korea.
  36. "Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-devices based on Fundamental Physics of Why Silicides Exist in Nature ", T.Nakayama, K. Kakushima, O. Nakatsuka, Y. Machida, S. Sotome, T. Matsuki, K. Ohmori, H. Iwai, S. Zaima, T. Chikyow, K. Shiraishi, and K. Yamada, 2010  IEEE International Electron Devices Meeting, pp. 375-378,  San Francisco, USA,Dec. 6-8, 2010.

2009
  1. [Invited] "Formation and characterization of tensile-strained Ge layers on Ge1-xSnx buffer layers", S. Zaima, O. Nakatsuka, Y. Shimura, N. Tsutsui, and A. Sakai, The 6th International Conference on Silicon Epitaxy and Heterostructures, Los Angeles, USA, May 17-22, 2009.
  2. "Low Temperature Growth of Ge1-xSnx Buffer Layers for Tensile-strained Ge Layers", Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, The 6th International Conference on Silicon Epitaxy and Heterostructures, Los Angeles, USA, May 17-22, 2009.
  3. "Analysis of Local Strain in Ge1-xSnx /Ge/Si(001) Heterostructures by X-ray Microdiffraction", O. Nakatsuka, Y. Shimura, N. Tsutsui, A. Sakai, Y. Imai, H. Tajiri, O. Sakata, S. Kimura, and S. Zaima, The 6th International Conference on Silicon Epitaxy and Heterostructures, Los Angeles, USA, May 17-22, 2009.
  4. "Effect of Atomic Deuterium Irradiation on Initial Growth of Sn and Ge1-xSnx on Ge(001) Substrates", T. Shinoda, O. Nakatsuka, and S. Zaima, The 6th International Conference on Silicon Epitaxy and Heterostructures, Los Angeles, USA, May 17-22, 2009.
  5. "Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing", T. Kato, T. Ueda, Y. Ohara, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, Y. Imai, S. Kimura, and O. Sakata, The 6th International Conference on Silicon Epitaxy and Heterostructures, Los Angeles, USA, May 17-22, 2009.
  6. "Formation Processes of Ge3N4 films by Radical Nitridation and their Electrical Properties", K. Kato, H. Kondo, and S. Zaima, The 6th International Conference on Silicon Epitaxy and Heterostructures, Los Angeles, USA, May 17-22, 2009.
  7. [Invited]"Study on Gate Stacks in Future Nano-Scaled CMOS using Hard X-Ray Photoelectron Spectroscopy", S. Zaima, O. Nakatsuka, T. Hattori, International Workshop for New Opportunities in Hard X-ray Photoelectron Spectroscopy (HAXPES 2009), New York, USA, May 20-22, 2009.
  8. "Influence of Interfacial Structure on Electrical Properties of Metal/Ge Schottky Contacts", O. Nakatsuka, S. Akimoto, T. Nishimura and S. Zaima, The 9th International Workshop on Junction Technology (IWJT2009), pp. 40-41, Kyoto, Japan, June 11-12, 2009.
  9. "Formation of Pr Oxide Films by Atomic Layer Deposition using Pr(EtCp)3 Precursor", H. Kondo, H. Matsui, K. Furuta, M. Sakashita, and S. Zaima, 2009 International Conference on Solid State Devices and Materials (SSDM), Sendai, Japan, Oct. 7-9, 2009.
  10. "Crystalline Structures and Electrical Properties of High Nitrogen-content Hf-Si-N Films", K. Miyamoto, H. Kondo, and S. Zaima, 2009 International Conference on Solid State Devices and Materials (SSDM), Sendai, Japan, Oct. 7-9, 2009.
  11. "Mobility Behavior in Ge1-xSnx Layers Grown on SOI Substrates", N. Tsutsui, Y. Shimura, O. Nakatsuka, A. Sakai, and S. Zaima, 2009 International Conference on Solid State Devices and Materials (SSDM), Sendai, Japan, Oct. 7-9, 2009.
  12. [Invited] "Formation of GeSn Buffer Layers for High-Speed Strained-Ge Channel MOSFETs", S. Zaima, The 1st International Workshop on Si based nano-electronics and -photonics, Vigo, Spain, Sept. 20-23, 2009.
  13. Keynote Talk: "Technology Evolution of Silicon", S. Zaima, 216th Electro Chemical Society (ECS) Meeting, Vienna, Austria, Oct. 4-9, 2009.
  14. [Invited] "Contact Technology for Nano-Scaled CMOS", S. Zaima, Advanced Metallization Conference 2009 (ADMETA): 19th Asian Session, p. 100, Tokyo, Japan, Oct. 20-21, 2009.
  15. " Formation of Palladium Silicide on Heavily Doped Si (001) Substrates Using Ti Intermediate Layer", R. Suryana, O. Nakatsuka, and S. Zaima, Advanced Metallization Conference 2009 (ADMETA): 19th Asian Session, pp. 58-59, Tokyo, Japan, Oct. 20-21, 2009.

2008
  1. [Invited] "Frontier of Thin Film Processing in ULSI Technology", S. Zaima, 6th International Workshop of Advanced Plasma Processing, Nagoya, Japan, Jan. 8-9, 2008.
  2. "Development of high-density radical source for radical nitridation process in ULSI technology development of high-density radical source for radical nitridation process in ULSI technology", H. Kondo, S. Oda, S. Takashima, A. Sakai, M. Ogawa, S. Zaima, M. Hori, S. Den, and H. Kano, The International Conference on Plasma-NanoTechnology and Science, Nagoya, Japan, Mar. 13-14, 2008.
  3. "Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates", E. Toyoda, A. Sakai, O. Nakatsuka, S. Zaima, M. Ogawa, H. Isogai, T. Senda, K. Izunome, and K. Omote, The fourth International SiGe Technology and Device Meeting (ISTDM), pp. 139-140, HsinChu, Taiwan, May 11-14, 2008.
  4. "Effect of Hydrogen on Initial Growth of Sn and Ge1-xSnx on Ge(001) substrates", M. Yamazaki, O. Nakatsuka, T. Shinoda, A. Sakai, M. Ogawa, and S. Zaima, The fourth International SiGe Technology and Device Meeting (ISTDM), HsinChu, Taiwan, May 11-14, 2008.
  5. "Novel Method to Introduce Uniaxial Tensile Strain in Ge by Microfabrication of Ge/Si1-xGex Structures on Si(001) Substrates", T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, M. Ogawa, and S. Zaima, The fourth International SiGe Technology and Device Meeting (ISTDM), pp. 149-150, HsinChu, Taiwan, May 11-14, 2008.
  6. "Microstructures in Directly Bonded Si Substrates", A. Sakai, Y. Ohara, T. Ueda, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, The fourth International SiGe Technology and Device Meeting (ISTDM), pp. 153-154, HsinChu, Taiwan, May 11-14, 2008.
  7. [Invited] "Challenges in Materials and Processing for Nano-Scaled ULSIs", S. Zaima, 17th World Interfinish Congress, Busan, Korea, June 16-19, 2008.
  8. "Thermal Stability and Scalability of Mictamict Ti-Si-N MOS Gate Electrodes", H. Kondo, K. Furumai, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, 2008 International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, Sept. 24-26, 2008.
  9. "Metalorganic Chemical Vapor Deposition of High-Dielectric-Constant Praseodymium Oxide Films using a Liquid Cyclopentadienyl Precursor", H. Kondo, S. Sakurai, A. Sakai, M. Ogawa and S. Zaima 2008 International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, Sept. 24-26, 2008.
  10. "Control of Sn Precipitation and Strain relaxation in Compositionally Step-graded Ge1-xSnx Buffer Layers for Tensile-strained Ge Layers", Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, 2008 International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, Sept. 24-26, 2008.
  11. "Analysis of Uniaxial Tensile Strain in Microfabricated Ge/Si1-x Gex Structures on Si(001) Substrates", T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, and S. Zaima, 4th International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 19-20 Sendai, Japan, Sept. 25-27, 2008.
  12. "Formation and Characterization of Compositionally Step-graded Ge1-x Snx Buffer Layers for Tensile-strained Ge Layers", Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, 4th International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 27-28, Sendai, Japan, Sept. 25-27, 2008.
  13. "Formation of Tensile-Strained Ge Layers on Ge1-xSnx Buffer Layers and Control of Strain and Dislocation Structures", O. Nakatsuka, Y. Shimura, A. Sakai, and S. Zaima, 4th International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 63-64, Sendai, Japan, Sept. 25-27, 2008.
  14. "Crystalline and Electrical Properties of Thin Pd Silicide Layer/Si Contacts", R. Suryana, S. Akimoto, O. Nakatsuka and S. Zaima, Advanced Metallization Conference 2008 (ADMETA): 18th Asian Session, Tokyo, Japan, Oct. 8-10, 2008.
  15. [Invited] "Challenges in Materials and Processing for Nano-Scaled CMOS", A. Sakai, Y. Ohara, T. Ueda, E. Toyoda, K. Izunome, S. Takeuchi, Y. Shimura, O. Nakatsuka, M. Ogawa, S. Zaima, and S. Kimura, PRiME 2008-Joint International Meeting of 214th Meeting of The Electrochemical Society and 2008 Fall Meeting of The Electrochemical Society of Japan, Hawaii, USA, Oct. 12-17, 2008.
  16. [Invited] "Interface and defect control for group IV channel engineering", S. Zaima, 21th International Microprocesses and Nanotechnology Conference, Fukuoka, Japan, Oct. 27-30, 2008.
  17. "Nitrogen Content Dependence of Resistivity and Crystalline Structures of Ti-Si-N and Hf-Si-N Gate Electrodes", K. Miyamoto, K. Furumai, B.E. Urban, H. Kondo, and S. Zaima, The 2008 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF), pp. 43-44, Tokyo, Japan, Nov. 5-7, 2008.
  18. "Effects of ALD-Al2O3 Interface Layers on Interfacial Properties of Ge MOS Capacitors", R. Kato, S. Kyogoku, M. Sakashita, H. Kondo, and S. Zaima, The 2008 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF), pp. 105-106, Tokyo, Japan, Nov. 5-7, 2008.
  19. "Growth and characterization of tensile strained Ge on Ge1-xSnx buffers for novel channel layer", A. Sakai, S. Takeuchi, O. Nakatsuka, and S. Zaima, The 5th International Symposium on Advanced Science and Technology of Silicon Materials, pp. 226-230, Hawaii, USA, Nov. 10-14, 2008.
  20. "Characterization and analyses of interface structures in directly bonded Si(011)/Si(001) substrates", E. Toyoda, A. Sakai, O. Nakatsuka, H. Isogai, T. Senda, K. Izunome, K. Omote, and S. Zaima, The 5th International Symposium on Advanced Science and Technology of Silicon Materials, Hawaii, USA, Nov. 10-14, 2008.
  21. "Formation of Uniaxial Tensile-strained Ge by using Micro-patterning of Ge/Si1-xGex/Si Structures", T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, and S. Zaima, The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008), Nagoya, Japan, Dec. 9-13, 2008.
  22. "Formation and Characterization of Tensile-strained Ge layers on Ge1-xSnx Buffer Layers", Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008), Nagoya, Japan, Dec. 9-13, 2008.
  23. "Strain and interfacial defects in directly bonded Si substrates", Y. Ohara, T. Ueda, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, H. Tajiri, O. Sakata and S. Kimura, The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008), Nagoya, Japan, Dec. 9-13, 2008.
  24. "Atomistic analysis of directly bonded Si substrate interface", T. Ueda, Y. Ohara, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, T. Sakata, and H. Mori, The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008), Nagoya, Japan, Dec. 9-13, 2008.

2007
  1. [Invited] "Strain and dislocations in group IV semiconductor heterostructures", A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima, Materials Research Society 2007 Spring Meeting, San Francisco, USA, Apr. 9-13, 2007.
  2. "Characterization of bonding structures of directly bonded hybrid crystal orientation substrates", E. Toyoda, A. Sakai, H. Isogai, T. Senda, K. Izunome, O. Nakatsuka, M. Ogawa, and S. Zaima, 5th International Conference on Silicon Epitaxy and Heterostructures, pp. 337-338, Marseille, France, May 20-25, 2007.
  3. "Formation of high-density Si nanodots by agglomeration of ultra-thin amorphous Si films", H. Kondo, T. Ueyama, E. Ikenaga, K. Kobayashi, A. Sakai, M. Ogawa, and S. Zaima, 5th International Conference on Silicon Epitaxy and Heterostructures, pp. 305-306, Marseille, France, May 20-25, 2007.
  4. [Invited] "Silicide and germanide technology for contacts and gates in MOSFET applications", S. Zaima, 5th International Conference on Silicon Epitaxy and Heterostructures, pp. 71-72, Marseille, France, May 20-25, 2007.
  5. "Tensile strained Ge layers on strain-relaxed Ge1-xSnx/virtual Ge substrates", S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima, 5th International Conference on Silicon Epitaxy and Heterostructures, pp. 36-37, Marseille, France, May 20-25, 2007.
  6. "Impact of Pt Incorporation on Thermal Stability of NiGe Layers on Ge(001) Substrates", O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, and S. Zaima, 7th International Workshop on Junction Technology 2007, pp. 87-88, Kyoto, Japan, June 8-9, 2007.
  7. "Development of new high-density radical sources and its application to radical nitridation of Ge surfaces", H. Kondo, S. Oda, S. Takashima, A. Sakai, M. Ogawa, S. Zaima, M. Hori, S. Den, H. Kano, The 20th Symposium on Plasma Science for Materials, p. 128, Nagoya, Japan, June 21-22, 2007.
  8. "Pr-Oxide-Based Dielectric Films on Ge Substrates",  M. Sakashita, N. Kito, A. Sakai, H. Kondo, O. Nakatsuka, M. Ogawa and S. Zaima, 2007 International Conference on Solid State Devices and Materials, Tsukuba, Japan, Sept. 18-21, 2007.
  9. "Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors", K. Furumai, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa and S. Zaima, 2007 International Conference on Solid State Devices and Materials, Tsukuba, Japan, Sept. 18-21, 2007.
  10. "Surface Treatment of Ge(001) Surface by Radical Nitridation", H. Kondo, M. Fujita, A. Sakai, M. Ogawa and S. Zaima, 2007 International Conference on Solid State Devices and Materials, Tsukuba, Japan, Sept. 18-21, 2007.
  11. "Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi2/Si Schottky Contacts Formed from Ni/Ti/Si System", O. Nakatsuka, A. Suzuki, S. Akimoto, A. Sakai, M. Ogawa and S. Zaima, 2007 International Conference on Solid State Devices and Materials, Tsukuba, Japan, Sept. 18-21, 2007.
  12. [Invited] "Silicide and Germanide Technology for Contacts and Metal Gates in MOSFET Applications", S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, and M. Ogawa, 212th Electrochemical Society Meeting, Washington D.C., USA, Oct. 7-12, 2007.
  13. "Contact Propeties of Epitaxial NiSi2/Heavily Doped Si Structures Formed from Ni/Ti/Si Systems", S. Akimoto, O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, and S. Zaima, Advanced Metallization Conference 2007: 17th Asian Session, pp. 90-91, Tokyo, Japan, Oct. 23-24, 2007.
  14. "Structural and Electrical Properties of Metal-germanide MOS Gate Electrodes", H. Kondo, D. Ikeno, Y. Kaneko, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, The Sixth Pacific Rim Inernational Conference on Advanced Materials and Processing, p. 26, Jeju, Korea, Nov. 5-9, 2007.
  15. "Electrical and Crystalline Properties of Epitaxial NiSi2/Si Contacts Fromed in Ni/Ti/Si(001) Systems", O. Nakatsuka, A. Suzuki, S. Akimoto, A. Sakai, M. Ogawa, and S. Zaima, The Sixth Pacific Rim Inernational Conference on Advanced Materials and Processing, p. 72, Jeju, Korea, Nov. 5-9, 2007.
  16. "Tensile Strained Ge Layers Grown on Compositionally Step-Graded Ge1-xSnx Buffer Layers", Y. Shimura, S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima, The 3nd international workshop on new group IV semiconductor nanoelectronics, pp. 29-30, Sendai, Japan, Nov. 8-9, 2007.
  17. [Invited] "Growth and Characterization of Tensile-Strained Ge Layers on Strain Relaxed Ge1-xSnx Buffer Layers", O. Nakatsuka, S. Takeuchi, A. Sakai, M. Ogawa, and S. Zaima, The 3nd international workshop on new group IV semiconductor nanoelectronics, pp. 75-76, Sendai, Japan, Nov. 8-9, 2007.
  18. [Invited] "Defect Control for Ge/Si and  Ge1-xSnx/Ge/Si Heterostructures", A. Sakai, S. Takeuchi, O. Nakatsuka, M. Ogawa, and S. Zaima, Fifth International Symposium on Control of Semiconductor Interfaces, pp. 31-32, Tokyo, Japan, , Nov. 12-14, 2007.
  19. "Characterization of Local Strains in Si1-xGex Hetero-mesa Structures on Si(001) Substrates by Using X-ray Microdiffraction", O. Nakatsuka, K. Yukawa, S. Mochizuki, A. Sakai, K. Fukuda, S. Kimura, O. Sakata, K. Izunome, T. Senda, E. Toyoda, M. Ogawa, and S. Zaima, Fifth International Symposium on Control of Semiconductor Interfaces, pp. 41-42, Tokyo, Japan, Nov. 12-14, 2007.
  20. "Scanning Tunneling Microscopy Observation of Initial Growth of Sn and Ge1-xSnx Layers on Ge(001) Substrates", M. Yamazaki, S. Takeuchi, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima, Fifth International Symposium on Control of Semiconductor Interfaces, pp. 85-86, Tokyo, Japan, Nov. 12-14, 2007.
  21. "Effect of alcohol sources on synthesis of single-walled carbon nanotubes", S. Oida, A. Sakai, O. Nakatuska, M. Ogawa, and S. Zaima,  9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, Tokyo, Japan, Nov. 11-15, 2007.
  22. "Formation of high-density Si nanodots and characterization of chemical bonding states by soft-X-ray photoelectron spectroscopy", H. Kondo, 9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, Tokyo, Japan, Nov. 11-15, 2007.
  23. [Invited] "Controlling Interface Properties of Silicide/Si Contacts for Si ULSI Applications", S. Zaima, O. Nakatsuka, A. Sakai, and M. Ogawa, 9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, Tokyo, Japan, Nov. 11-15, 2007.

 

2006
  1. "Electrical properties of epitaxial NiSi2/Si contacts with extremely flat interface formed in Ni/Ti/Si(001) system", O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, and S. Zaima, Materials for Advanced Metallization Conference 2006, pp. 177-178, Grenoble, Frence, Mar. 5-8, 2006.
  2. "Systematic Characterization of Ni Full Silicide in Sub-100 nm Gate Regions", D. Ito, A. Sakai, O. Nakatsuka, H. Kondo, Y. Akasaka, M. Ogawa, and S. Zaima, 2006 MRS Spring Meeting, San Francisco, USA, Apr. 17-21, 2006.
  3. [Invited] "Control and characterization of strain in SiGe/Si heterostructures with engineered misfit dislocations", A. Sakai, N. Taoka, S. Mochizuki, K. Yukawa, O. Nakatsuka, S. Takeda, S. Kimura, M. Ogawa, and S. Zaima, The third International SiGe Technology and Device Meeting, pp. 232-233, Princeton, USA, May 15-17, 2006.
  4. "Strain relaxation of patterned Ge and SiGe structures on Si(001) substrates", S. Mochizuki, A. Sakai, O. Nakatsuka, H. Kondo, K. Yukawa, K. Izunome, T. Senda, E. Toyoda, M. Ogawa, and S. Zaima, The third International SiGe Technology and Device Meeting, pp. 258-259, Princeton, USA, May 15-17, 2006.
  5. "Growth and structure evaluation of strain-relaxed Ge1-xSnx buffer layers on virtual Ge(001) substrates", S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, and S. Zaima, The third International SiGe Technology and Device Meeting, pp. 98-99, Princeton, USA, May 15-17, 2006.
  6. [Invited] "Nano-scale Observations for Local Current Leakage in High-k Gate Dielectrics Using Conductive-Atomic Force Microscopy",  S. Zaima, A. Seko, T. Sago, M. Sakashita, A. Sakai, and M. Ogawa, The European Materials Research Society 2006 Spring Meeting (E-MRS - IUMRS - ICEM 06), Nice, France, May 29-June 2, 2006.
  7. Keynote Lecture: "Silicides and Related-Materials for ULSI Applications",  S. Zaima, A. Sakai, and M. Ogawa, Asia-Pacific Conference on Semiconducting Silicides: Science and Technology Towards Substainable Optoelectronics, pp. 1-2, Kyoto, Japan, July 29-31, 2006.
  8. Invited lecture: "Nano-scale Observations for degradation phenomena in High-k gate dielectrics using conductive-atomic force microscopy", S. Zaima, A. Seko, M. Sakashita, A. Sakai and M. Ogawa, The IUMRS International Conference in Asia 2006 , Sept. 10-14, 2006, Jeju, Korea.
  9. "Behavior of Local Charge Trapping Sites in La2O3-Al2O3 Comosite Films under Constant Voltage Stress", T. Sago, A. Seko, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, 2006 International Conference on Solid State Devices and Materials, pp. 418-419, Sept. 12-15, 2006, Yokohama, Japan.
  10. "Comparison Dependence of Work Function in Metal (Ni, Pt)-Germanide Gate Electrodes", D. Ikeno, K. Furumai, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, 2006 International Conference on Solid State Devices and Materials, pp. 442-443, Sept. 12-15, 2006, Yokohama, Japan.
  11. [Invited] "Hard X-ray Photoelectron Spectroscopy Study on Buried Interfaces in Next Generation CMOS Devices", T. Hattori and S. Zaima, The 2nd International Workshop on Hard X-ray Photoelectron Spectroscopy, p. 20, Sept. 19-20, 2006, Hyogo, Japan.
  12. "Interfacial Structure of HfON/SiN/Si Gate Stacks", O. Nakatsuka, M. Sakashita, H. Kondo, E. Ikenaga, M. Kobata, J.-J. Kim, H. Nohira, T. Hattori, A. Sakai, M. Ogawa, S. Zaima, The 2nd International Workshop on Hard X-ray Photoelectron Spectroscopy, p. 102, Sept. 19-20, 2006, Hyogo, Japan.
  13. "Dislocation Structure and Strain Relaxation of SiGe and Ge Sub-micron Stripe Lines on Si(001) Substrates", O. Nakatsuka, S. Mochizuki, A. Sakai, H. Kondo, K. Yukawa, M. Ogawa, and S. Zaima, The 2nd International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 69-70, Oct. 2-3, 2006, Sendai, Japan.
  14. "Mosaicity and Dislocations in Strain-Relaxed SiGe Buffer Layers on SOI Substrates", O. Nakatsuka, N. Taoka, A. Sakai, S. Mochizuki, M. Ogawa, and S. Zaima, The 2nd International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 71-72, Oct. 2-3, 2006, Sendai, Japan.
  15. [Invited] "Buffer layer technology with misfit dislocation engineering", A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima, The 2nd International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 81-82, Oct. 2-3, 2006, Sendai, Japan.
  16. "Control of Strain and Dislication Structures in Ge1-xSnx buffer layers on virtual Ge substrates", S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, and S. Zaima, The 2nd International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 91-92, Oct. 2-3, 2006, Sendai, Japan.
  17. [Invited] "Ni-Silicide/Si and SiGe(C) Contact Technology for ULSI Applications", O. Nakastuka, S. Zaima, A. Sakai, and M. Ogawa, The 14th annual IEEE International Conference on Advanced Thermal Processing of Semiconductors, pp. 31-37, Oct. 10-13, 2006, Kyoto, Japan.
  18. "Electrical Properties and Bonding Structures of Germanium Nitride/Ge(100) Structures Formed by Radical Nitridation", H. Kondo, I. Yanagi, M. Sakashita (Graduate School of Engineering, Nagoya university), A. Sakai, M. Ogawa, and S. Zaima, 210th Meeting of The Electrochemical Society, Oct. 29-Nov. 3, 2006, Cancun, Mexico.
  19. "Scanning Tunneling Microscopy Study on the Reaction of Oxygen with Clean Ge(001) Surfaces", A. Sakai, Y. Wakazono, O. Nakatsuka, S. Zaima, and M. Ogawa, 210th Meeting of The Electrochemical Society, Oct. 29-Nov. 3, 2006, Cancun, Mexico.
  20. "Evaluation of Trapped Charge Distributions in Stressed Gate SiO2 Films using Conductive Atomic Force Microscopy", A. Seko, Y. Watanabe, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, The 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology, pp. 23-24, Nov. 8-10, 2006, Kanagawa, Japan.

2005
  1. "Transmission electron microscopy analysis of dislocation structures in the strain-relaxed SiGe films on Si and silicon-on-insulator substrates", N. Taoka, A. Sakai, S. Mochizuki, O. Nakatsuka, M. Ogawa, S. Zaima, and Y. Yasuda, International Symposium on Characterization of Real Materials and Real Processing by Transmission Electron Microscopy, Nagoya, Japan, Jan. 26-27, 2005.
  2. "Improvement on NiSi/Si contact properties with C-implantation", S. Zaima, O. Nakatsuka, K. Okubo, A. Sakai, M. Ogawa, and Y. Yasuda, Materials for Advanced Metallization Conference 2005, pp. 143-144, Dresden, Germany, Mar. 6-9, 2005.
  3. Plenary lecture:"Nitrogen radical surface reactions and advanced ULSI device processing", S. Zaima, Korea-Japan Workshop on Advanced Plasma Processing and Diagnostics, Busan, Korea, Apr. 22-23, 2005.
  4. "Control of Misfit Dislocations in Strain-Relaxed SiGe Buffer Layers on SOI Substrates", N. Taoka, A. Sakai, S. Mochizuki, O. Nakatsuka, M. Ogawa, and S. Zaima, Fourth International Conference on Silicon Epitaxy and Heterostructures, pp. 120-121, Awaji Island, Japan, May 23-26, 2005.
  5. "Local Strain in SiGe/Si Heterostructures Analyzed by X-Ray Microdiffraction", S. Mochizuki, A. Sakai, N. Taoka, O. Nakatsuka, S. Takeda, S. Kimura, M. Ogawa, and S. Zaima, Fourth International Conference on Silicon Epitaxy and Heterostructures, pp. 124-125, Awaji Island, Japan, May 23-26, 2005.
  6. "Hard X-Ray Photoelectron Spectroscopy for HfON/SiN/Si System", O. Nakatsuka, R. Takahishi, M. Sakashita, E. Ikenaga, K. Kobayashi, H. Nohira, T. Hattori, A. Sakai, M. Ogawa, and S. Zaima, Fourth International Conference on Silicon Epitaxy and Heterostructures, pp. 270-271, Awaji Island, Japan, May 23-26, 2005.
  7. "Surface structures in the initial growth of epitaxial Si1-x-yGexCy layers in SiGe and C alternate deposition", S. Takeuchi, O. Nakatsuka, Y. Wakazono, A. Sakai, M. Ogawa, Y. Yasuda, and S. Zaima, First International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 33-34, Sendai, Japan, May 27-28, 2005.
  8. "Control of Solid-Phase Reaction and Electrical Properties of Ni silicide/Si Contacts by Ge and C Incorporation", O. Nakatsuka, K. Okubo, A. Sakai, J. Murota, Y. Yasuda, M. Ogawa, and S. Zaima, First International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 35-36, Sendai, Japan, May 27-28, 2005.
  9. "Impact of C implantation on electrical properties of NiSi/Si contact", O. Nakatsuka, K. Okubo, A. Sakai, M. Ogawa, and S. Zaima,  The 5th International Workshop on Junction Technology, pp. 91-92, Osaka, Japan, June 7-8, 2005.
  10. Invited lecture: "Nano-scale Observations for Degradation Phenomena in SiO2 and High-k Gate Insulators using Conductive Atomic Force Microscopy", S. Zaima, A. Seko, Y. Watanabe, T. Sago, M. Sakashita, H. Kondo, A. Sakai, and M. Ogawa, 2005 International Conference on Solid State Devices and Materials, Sept. 12-15, 2005, Kobe, Japan.
  11. "Local Current Leakage Characterization in La2O3-Al2O3 Composite Films by Conductive Atomic Force Microscopy", A. Seko, T. Sago, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, 2005 International Conference on Solid State Devices and Materials, pp. 246-247, Sept. 12-15, 2005, Kobe, Japan.
  12. "Film structures and electrical properties of Pr silicate formed by pulsed laser deposition", K. Ariyoshi, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, 2005 International Conference on Solid State Devices and Materials, pp. 256-257, Sept. 12-15, 2005, Kobe, Japan.
  13. [Invited] "Dislocation and strain engineering for SiGe buffer layers on Si", A. Sakai, S. Mochizuki, N. Taoka, O. Nakatsuka, S. Takeda, S. Kimura, M. Ogawa, and S. Zaima, Symposium on Crystalline Defects and Contamination: Their Impact and Control in Device Manufacturing IV (joint with 35th European Solid State Device Research Conference), Grenoble, Frence, Sept. 15-16, 2005.
  14. "Epitaxial NiSi2 layers with extremely flat interfaces in Ni/Ti/Si(001) system", A. Suzuki, K. Okubo, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima, Advanced Metallization Conference 2005: 15th Asian Session, Tokyo, Japan, Oct. 13-14, 2005.

2004
  1. "Growth mechanism of epitaxial NiSi2 layer in the Ni/Ti/Si(001) contact for atomically flat interfaces", O. Nakatsuka, K. Okubo, A. Sakai, S. Zaima, and Y. Yasuda, in Abstr. of The 4th International Workshop on Junction Technology, Shanghai, China, Mar. 15-16, 2004.
  2. [Invited]"Current Status and Future Prospects of Si-ULSI Technology", S. Zaima, The 1st Workshop for Joint Program Japan-US Research Collaboration for Synchrotron Radiation Nanomaterials Science, Tokyo, Japan, Mar. 16-17, 2004.
  3. "Initial growth behaviors of SiGeC in SiGe and C alternative deposition", S. Takeuchi, O. Nakatsuka, Y. Wakazono, A. Sakai, S. Zaima, and Y. Yasuda, Second International SiGe Technology and Device Meeting, pp. 192-193, Frankfurt (Oder), Germany, 16-19 May, 2004.
  4. "Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations", N. Taoka, A. Sakai, T. Egawa, O. Nakatsuka, S. Zaima, and Y. Yasuda, Second International SiGe Technology and Device Meeting, pp. 43-44, Frankfurt (Oder), Germany, May 16-19, 2004.
  5. "Thickness Dependence of Microscopic Current-Voltage Characteristics in Stressed SiO2 Films", Y. Watanabe, A. Seko, H. Kondo, A. Sakai, S. Zaima, and Y. Yasuda, 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices, Tokyo, Japan, 26-28 May, 2004.
  6. "HfO2 Dielectric Film Formation Combined with Radical Nitridation",M. Sakashita, R. Takahashi, A. Sakai, S. Zaima, and Y. Yasuda, 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices, Tokyo, Japan, May 26-28, 2004.
  7. "Analysis of Breakdown Phenomena in Stressed Gate SiO2 Films by Conductive Atomic Force Microscopy", A. Seko, Y. Watanabe, H. Kondo, A. Sakai, S. Zaima, and Y. Yasuda, 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices, Tokyo, Japan, 26-28 May, 2004.
  8. "Growth Process and Energy Bandgap Formation of Silicon Nitride Films in Radical Nitridation Process", H. Kondo, K. Kawaai, A. Sakai, K. Miyazaki, S. Zaima, and Y. Yasuda, 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices, Tokyo, Japan, 26-28 May, 2004.
  9. [Invited]"Growth of strain-relaxed SiGe buffer layers on Si(001) substrates with controlled generation and propagation of dislocations", A. Sakai, S. Zaima, and Y. Yasuda, Materials Research Society 2004 Spring Meeting, San Francisco, USA, April 12-16, 2004.
  10. [Invited] "Nanoscale analysis of degradation phenomena in MOS gate insulators using conductive atomic force microscopy", S. Zaima, H. Kondo, M. Sakashita, A. Sakai, and Y. Yasuda, The 12th International Conference on Solid Films and Surfaces, p. 8, Hamamatsu, Japan, 21-25 Jun., 2004.
  11. "Thermal Stability and Electrical Properties of (La2O3)1-x(Al2O3)x Composite Films", R. Fujitsuka, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda, 2004 International Conference on Solid State Device and Materials, pp. 528-529, Tokyo, Japan, 15-17 Sep., 2004.
  12. "Growth and Dislocation Control of Strain-relaxed SiGe Buffer Layers on Si(100) Substrates", Y. Yasuda, The Seventh China-Japan Symposium on Thin Films, pp. 33-36, Chengdu, China, 20-22 Sep., 2004.
  13. "Nickel Silicide Technology for Low Resistivity Contacts in ULSI Devices", S. Zaima, O. Nakatsuka, A. Sakai, and Y. Yasuda, The Seventh China-Japan Symposium on Thin Films, pp. 151-154, Chengdu, China, 20-22 Sep., 2004.
  14. "Thermal stability and electrical properties of Ni-silicide on C-incorporation", O. Nakatsuka, K. Okubo, A. Sakai, M. Ogawa, S. Zaima, J. Murota, and Y. Yasuda, Advanced Metallization Conference 2004: Asian Session, pp. 18-19, Tokyo, Japan, 28-29 Sep., 2004.
  15. [Invited] "Group-IV Semiconductor Materials Engineering for Advanced Device Technology", Y. Yasuda, A. Sakai, O. Nakatsuka, and S. Zaima, 2004 Joint International Meeting: 206 th Meeting of The Electrochemical Society (ECS) and 2004 Fall Meeting of The Electrochemical Society of Japan (ECSJ), Honolulu, USA, 3-8 Oct., 2004.
  16. "Preparation and Evaluation of NiGe Gate Electrodes for Metal-Oxide-Semiconductor Devices", Y. Kaneko, H. Kondo, A. Sakai, S. Zaima, and Y. Yasuda, 2004 Joint International Meeting: 206 th Meeting of The Electrochemical Society (ECS) and 2004 Fall Meeting of The Electrochemical Society of Japan (ECSJ), Honolulu, USA, Oct. 3-8, 2004.
  17. "Improvement in the Ni silicide/Si contact properties by C implantation", K. Okubo, O. Nakatsuka, A. Sakai, M. Ogawa, S. Zaima, J. Murota and Y. Yasuda, Third International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Application to Ultrahigh Speed and Opto-Electronic Devices, pp. 43-44, Sendai, Japan, Oct. 12-13, 2004.
  18. "Control of initial growth of epitaxial NiSi2 on Si(001) with C incorporation", O. Nakatsuka, E. Okada, D. Ito, A. Sakai, S.Zaima, M. Ogawa, and Y. Yasuda, Third International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Application to Ultrahigh Speed and Opto-Electronic Devices, pp. 41-42, Sendai, Japan, Oct. 12-13, 2004.
  19. "Analysis of microstructures in strain-relaxed SiGe buffer layers on SOI substrates with pure-edge dislocation networks", N. Taoka, A. Sakai, S. Mochizuki, O. Nakatsuka, S. Zaima, M. Ogawa, Y. Yasuda, T. Tezuka, N. Sugiyama, and S. Takagi, Third International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Application to Ultrahigh Speed and Opto-Electronic Devices, pp. 39-40, Sendai, Japan, Oct. 12-13, 2004.
  20. "Anisotropic strain-relaxation mechanism in SiGe/Si(001) heterostructures with 60deg. misfit dislocations", S. Mochizuki, T. Egawa, A. Sakai, N. Taoka, O. Nakatsuka, M. Ogawa, S. Zaima, and Y. Yasuda, Third International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Application to Ultrahigh Speed and Opto-Electronic Devices, pp. 35-36, Sendai, Japan, Oct. 12-13, 2004.
  21. "Evolution of surface morphology in the initial growth of Si1-x-yGexCy layers", S. Takeuchi, O. Nakatsuka, Y. Wakazono, A. Sakai, M. Ogawa, S. Zaima, and Y. Yasuda, Third International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Application to Ultrahigh Speed and Opto-Electronic Devices, pp. 33-34, Sendai, Japan, Oct. 12-13, 2004.
  22. "Scanning tunneling microscopy observation of C adsorption behavior in the initial growth of SiGeC on Si(001)", Y. Wakazono, S. Takeuchi, O. Nakatsuka, A. Sakai, S. Zaima, M. Ogawa, and Y. Yasuda, Third International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Application to Ultrahigh Speed and Opto-Electronic Devices, pp. 31-32,Sendai, Japan, Oct. 12-13, 2004.
  23. "Fabrication and evaluation of floating gate memories with surface-nitrided Si nanocrystals", S. Naito, T. Ueyama, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, 2004 International Microprocesses and Nanotechnology Conference, pp. 170-171, Osaka, Japan, Oct. 26-29, 2004.
  24. [Invited]"Control of Ni/Si interfacial reaction and NiSi technology for ULSI applications", S. Zaima, O. Nakatsuka, A. Sakai, and Y. Yasuda, The International Union of Material Research Society- International Conference in Asian 2004, p. 205, Hsinchu, Taiwan, Nov. 16-18, 2004.
  25. "Dislocation engineering for high-quality SiGe epitaxial films on Si substrates", A. Sakai, S. Zaima, and Y. Yasuda, The 4th International Symposium on Advanced Science and Technology of Silicon Materials, pp. 245-250, Hawaii, USA, Nov. 24-26, 2004.
  26. "Dislocation and strain distribution analysis for SiGe buffer layers formed on silicon on insulator substrates", N. Taoka, A. Sakai, S. Mochizuki, O. Nakatsuka, S. Zaima, Y. Yasuda, M.Ogawa, T. Tezuka, N. Sugiyama, and S. Takagi, 2004 Materials Research Society Fall Meeting, Boston, USA, Nov. 29-Dec. 3, 2004.

(2003年以前は当研究室の前 身である安田研究室における業績を含みます。)

2003

  1. [Invited]"Interfacial reaction and electrical properties in Ni/Si and Ni/SiGe contacts", S. Zaima, O. Nakatsuka, A. Sakai, J. Murota, and Y. Yasuda, First International SiGe Technology and Device Meeting, pp. 107-108, Nagoya, Japan, Jan. 15-17, 2003.
  2. "Strain-relaxation mechanisms of SiGe layers formed by two-step growth on Si(100)", T. Egawa, T. Yamamoto, N. Taoka, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda, First International SiGe Technology and Device Meeting, pp. 135-136, Nagoya, Japan, Jan. 15-17, 2003.
  3. "Dislocation structures and strain-relaxation in SiGe buffer layers on Si (001) with thin Ge interlayer", T. Yamamoto, T. Egawa, N. Taoka, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda, First International SiGe Technology and Device Meeting, pp. 137-138, Nagoya, Japan, Jan. 15-17, 2003.
  4. "Influence of SiGe interlayer on the initial growth of Si1-x-yGexCy on Si(100)", S. Ariyoshi, S. Takeuchi, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda, First International SiGe Technology and Device Meeting, pp. 141-142, Nagoya, Japan, Jan.15-17, 2003.
  5. "Solid phase growth of nickel silicide for low resistance contacts in Si and SiGe(C) devices", S. Zaima, Y. Tsuchiya, K. Okubo, O. Nakatsuka, A. Sakai, J. Murota, and Y. Yasuda, 3rd International SiGe(C) Epitaxy and Heterostructures Conference, pp. 74-75, Santa Fe, USA, Mar. 9-12, 2003.
  6. [Invited]"Atomistic Characterization of Radical Nitridation Process on Si(100) Surfaces", Y. Yasuda, A. Sakai, and S. Zaima, in Abstr. of Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, Paris, France, Apr. 28-May. 2, 2003.
  7. J. Yamasaki, N. Tanaka, O.Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda, "HRTEM and EELS Analysis of Interfacial Reactions in Ti/Si1-xGex/Si(100)", Microscopy and Microanalysis 2003, pp. 470-471, San Antonio, USA, Aug. 3-7, 2003.
  8. "Conductive Atomic Force Microscopy Analysis for Local Electrical Characteristics in Stressed SiO2 Gate Films", Y. Watanabe, A. Seko, H. Kondo, A. Sakai, S. Zaima, and Y. Yasuda, in Ext. Abstr. of 2003 International Conference on Solid State Device and Materials, pp. 72-73, Tokyo, Japan, Sep. 16-18, 2003.
  9. "HRTEM and EELS Analyses of Interfacial Nanostructures in Ti/Si1-xGex/Si(100)", J. YaM., N. Tanaka, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda, in Ext. Abstr. of 2003 International Conference on Solid State Device and Materials, pp. 86-87, Tokyo, Japan, Sep. 16-18, 2003.
  10. "Influence of structural variation of Ni silicide thin films on electrical property for contact materials", K. Okubo, Y. Tsuchiya, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda, in Ext. Abstr. of 2003 International Conference on Solid State Device and Materials, pp. 502-503, Tokyo, Japan, Sep. 16-18, 2003.
  11. "Chemical Structure of HfO2/Si Interfacial Transition Layer", M. Suzuki, K. Kimura, Y. Sugita, O. Nakatsuka, A. Sakai, S. Zaima, T. Ishikawa, S. Shin, and T. Hattori, in Ext. Abstr. of 2003 International Conference on Solid State Device and Materials, pp. 818-819, Tokyo, Japan, Sep. 16-18, 2003.
  12. "Low temperature formation of epitaxial NiSi2 in Ni/Ti/Si(100) system", O. Nakatsuka, K. Okubo, Y. Tsuchiya, A. Sakai, S. Zaima, and Y. Yasuda, in Abstr. of Advanced Metallization Conference: Asian Session, pp. 72-73, Tokyo, Japan, Sept. 30-Oct. 1, 2003.
  13. "Influence of C incorporation on the initial growth of epitaxial NiSi2 on Si(100)", E. Okada, S. Oida, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda, in Abstr. of The 7th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, p. 78, Nara, Japan, Nov. 16-20, 2003.
  14. "Growth of silicon nanocrystals with high number density for floating dot memory", S. Naito, M. Satake, H. Kondo, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda, in Abstr. of 2003 International Microprocesses and Nanotechnology Conference, pp. 20-21, Tokyo, Japan, Oct. 29-31, 2003.
  15. "Nanoscale analysis of local leakage currents in stressed gate SiO2 films by conducting atomic force microscopy", H. Kondo, A. Seko, Y. Watanabe, A. Sakai, S. Zaima, and Y. Yasuda, in Abstr. of 2003 Materials Research Society Fall Meeting, Boston, USA, Dec. 1-5, 2003.
  16. "Praseodymiun silicate formation by post-growth high temperature annealing", A. Sakai, S. Sakashita, M. Sakashita, S. Zaima, Y. Yasuda, and S. Miyazaki, in Abstr. of 2003 Materials Research Society Fall Meeting, Dec. 1-5, 2003, Boston, USA.
  17. "Detection of stress-induced defects in gate SiO2 films by conducting atomic force microscopy", Y. Watanabe, A. Seko, H. Kondo, A. Sakai, S. Zaima and Y. Yasuda, in Abstr. of The 11th International Colloquium on Scanning Probe Microscopy, Shizuoka, Japan, Dec. 11-13, 2003.
  18. "Local discharging of carriers at nanometer scale defects in gate SiO2 thin films observed by conducting atomic force microscopy", A. Seko, Y. Watanabe, H. Kondo, A. Sakai, S. Zaima, and Y. Yasuda, in Abstr. of The 11th International Colloquium on Scanning Probe Microscopy, Shizuoka, Japan, Dec. 11-13, 2003.

2002
  1. [Invited]"Novel growth method of thin strain-relaxed SiGe films on Si substrates", A. Sakai, K. Suhimoto, T. Yamamoto, M. Okada, H. Ikeda, O. Nakatsuka, S. Zaima, and Y. Yasuda, Second International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Kofu, Japan, Jun. 2-4, 2002.
  2. "Formation mechanism of low resistance contact in NiSi/Si system Ni/Si", O. Nakatsuka, Y. Tsuchiya, A. Sakai, S. Zaima, and Y. Yasuda, Second International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Kofu, Japan, Jun. 2-4, 2002.
  3. "Structural and electrical properties in Ni/Si(100) contacts", Y. Tsuchiya O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda, Second International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Kofu, Japan, Jun. 2-4, 2002.
  4. "Effect of Ge on solid phase epitaxy of CoSi2 on Si(100)", O. Nakatsuka, H. Onoda, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Second International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Kofu, Japan, Jun. 2-4, 2002.
  5. "Control of residual strain in SiGe buffer layers on Si substrates with ultra- thin Ge interlayers", T. Yamamoto, T. Egawa, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Second International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Kofu, Japan, Jun. 2-4, 2002.
  6. "Surface smoothing of strain-relaxed SiGe layers on Si substrates in two-step strain relaxation procedure", T. Egawa, T. Yamamoto, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Second International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Kofu, Japan, Jun. 2-4, 2002.
  7. [Invited]"Control in the initial growth of heteroepitaxial Si1-x-yGexCy on Si(100) substrates", S. Zaima, A. Sakai, and Y. Yasuda, International Conference on Solid Films and Surfaces, Marseille, France, Jul. 8-11, 2002.
  8. "Influence of Ge and C for reaction in Ni/p+-Si1-x-yGexCy/Si(100) contacts", Y. Tsuchiya, O. Nakatsuka, A. Sakai, S. Zaima, J. Murota, and Y. Yasuda, 2002 International Conference on Solid State Device and Materials, Nagoya, Japan, Sep. 17-19, 2002.
  9. "Local leakage current of HfO2 thin films characterized by conducting atomic force microscopy", H. Ikeda, T. Goto, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda, 2002 International Conference on Solid State Device and Materials, Nagoya, Japan, Sep. 17-19, 2002.
  10. "Structural and electrical properties of HfO2-TiO2 composite films formed by pulsed laser deposition", K. Honda, S. Goto, M. Sakashita, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, 2002 International Conference on Solid State Device and Materials, Nagoya, Japan, Sep.17-19, 2002.
  11. "Scanning tunneling microscopy of initial nitridation processes on oxidized Si(100) surface with radical nitrogen", R. Takahashi, Y. Kobayashi, H. Ikeda, M. Sakashita, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda, 2002 International Conference on Solid State Device and Materials, Nagoya, Japan, Sep. 17-19, 2002.
  12. "Novel nonvolatile random access memory with Si nanocrystals for ultra low power scheme", A. Shibata, H. Kotaki, T. Ogura, N. Arai, K. Adachi, S. Kakimoto, A. Kito, A. Sakai, S. Zaima, and Y. Yasuda, 2002 International Conference on Solid State Device and Materials, Nagoya, Japan, Sep. 17-19, 2002.
  13. "Initial growth process of TiN films in ultra-high vacuum rapid thermal chemical vapor deposition", Y. Okuda, S. Naito, O. Nakatsuka, T. Okuhara, A. Sakai, S. Zaima, and Y. Yasuda, Advanced Metallization Conference 2002: 12th Asian Session, Tokyo, Japan, Oct. 29-30, 2002.
  14. "Low Resistance Contact with NiSi for sub-0.1 um Si ULSI Devices", O. Nakatsuka, Y. Tsuchiya, A. Sakai, S. Zaima, and Y. Yasuda, The 3rd Japan-Korrea Joint Workshop on Advanced Semiconductor Processes and Equipments, Hakone, Japan, Oct. 29-30, 2002.
  15. "Effect of Al interlayer on two-step growth of CoSi2 on Si(100)", E. Okada, H. Onoda, O. Nakatsuka, H. Ikeda, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda, Fourth International Symposium on Control of Semiconductor Interfaces, Karuizawa, Japan, Oct. 21-25, 2002.
  16. "Epitaxial growth of CoSi2 films on oxygen-adsorbed Si(100) surfaces", Y. Hayashi, A. Sakai, O. Nakatsuka, S. Zaima, and Y. Yasuda, Fourth International Symposium on Control of Semiconductor Interfaces, Karuizawa, Japan, Oct. 21-25, 2002.
  17. "Improvement in morphology of nickel silicide film with carbon", O. Nakatsuka, Y. Tsuchiya, A. Sakai, S. Zaima, J. Murota, and Y. Yasuda, 3rd International Workshop on Junction Technology 2002, Tokyo, Japan, Dec. 2-3, 2002.

2001
  1. "Study on solid-phase reaction in Ti/p+-Si1-x-yGexCy/Si(100) contacts", A. Tobioka, Yoshinori Tsuchiya, H. Ikeda, A. Sakai, Y. Yasuda, S. Zaima, and J. Murota, European Materials Research Society 2001 Spring Meeting, Strasbourg, France, Jun. 5-8, 2001.
  2. "Formation of strain-relaxed SiGe films on Si substrates with cap layers", K. Sugimoto, T. Yamamoto, M. Okada, H. Ikeda, A. Sakai, Y. Yasuda, and S. Zaima, European Materials Research Society 2001 Spring Meeting, Strasbourg, France, Jun. 5-8, 2001.
  3. "Electrical properties and solid-phase reactions in Ni/Si(100) contacts", Y. Tsuchiya, A. Tobioka, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, 2001 International Conference on Solid State Devices and Materials (SSDM2001), Tokyo, Japan, Sept. 26-28, 2001.
  4. "Growth processes and electrical characteristics of silicon nitride films formed on Si(100) by radical nitrogen", H. Ikeda, D. Matsushita, S. Naito, K. Ohmori, A. Sakai, S. Zaima, and Y. Yasuda, 2001 International Conference on Solid State Devices and Materials (SSDM 2001), Tokyo, Japan, Sept. 26-28, 2001.
  5. "Structural and electrical characteristics of HfO2 films fabricated by pulsed laser deposition", H. Ikeda, S. Goto, K. Honda, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda, 2001 International Conference on Solid State Devices and Materials (SSDM 2001), Tokyo, Japan, Sept. 26-28, 2001.
  6. [Invited]"Dislocations and microstructure evolution in semiconductor thin films", A. Sakai, IUVSTA 15th International Vacuum Congress, AVS 48th International Symposium, 11th International Conference on Solid Surfaces, San Francisco, USA, Oct. 28 - Nov.2, 2001.
  7. "Structural relaxation at SiO2/Si(100) interfaces studied by coaxial impact collision ion scattering spectroscopy", H. Ikeda, M. Wasekura, A. Sakai, S. Zaima, and Y. Yasuda, 15th International Vacuum Congress (IVC), San Francisco, USA, 28 Oct. 28-Nov. 2, 2001.
  8. "Electrical Properties of Ni silicide/silicon contact", Y. Tsuchiya, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Advanced Metallization Conference 2001 (ADMETA2001): Asian Session, Tokyo, Japan, 30-31 Oct. 2001.
  9. "Study on solid phase Reactions in Ti/p+-Si1-x-yGexCy/Si(100) contacts", A. Tobioka, Yoshinori Tsuchiya, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Advanced Metallization Conference 2001 (ADMETA2001): Asian Session, Tokyo, Japan,Oct. 30-31, 2001.
  10. "Formation of TiN films by ultra-high vacuum rapid thermal chemical vapor deposition", S. Naito, M. Okada, O. Nakatsuka, T. Okuhara, A. Sakai, S. Zaima, and Y. Yasuda, Advanced Metallization Conference 2001 (ADMETA2001): Asian Session, Tokyo, Japan, Oct. 30-31, 2001.
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