名古屋大学大学院・工学研究科・結晶材料工学専攻
財満研究室
最終更新日: 2012/2/14

研究論文・研究報告

2012
  1. “Crystallinity Improvement of Epitaxial Ge Grown on a Ge(110) Substrate by Incorporation of Sn”, Y. Shimura, T. Asano, O. Nakatsuka, and S. Zaima, Appl. Phys. Express 5, 015501 (3 pages) (2011).
  2. “Characterization of Damage of Al2O3/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation”, Kusumandari, W.Takeuchi, K. Kato, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 51,  01AJ01 (5 pages) (2012).
  3. “Growth of Ge1-xSnx heteroepitaxial layers with very high Sn contents on InP(001) substrates”, M. Nakamura, Y. Shimura, S. Takeuchi, O. Nakatsuka, and S. Zaima, Thin Solid Films 520 (8), pp. 3201–3205 (2012).
  4. “In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates”, Y. Shimura, S. Takeuchi, O. Nakatsuka, B. Vincent, F. Gencarelli, T. Clarysse, W. Vandervorst, M. Caymax, R. Loo, A. Jensen, D.H. Petersen, and S. Zaima, Thin Solid Films 520 (8), pp. 3206–3210 (2012).
  5. “Homogeneous Si0.5Ge0.5 bulk crystal growth as substrates for strained Ge thin films by the traveling liquidus-zone method”, K. Kinoshita, O. Nakatsuka, S. Yoda, and S. Zaima, Thin Solid Films 520 (8), pp. 3279–3282 (2012).
  6. “Low temperature formation of Si1-x-yGexSny-on-insulator structures by using solid-phase mixing of Ge1-zSnz/Si-on-insulator substrates”, O. Nakatsuka, M. Mochizuki, Y. Shimura, T. Yamaha, and S. Zaima, Thin Solid Films  520 (8), pp. 3288–3292 (2012).
  7. “Improvement of Al2O3/Ge interfacial properties by O2-annealing”, S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima, Thin Solid Films 520 (8), pp. 3397–3401 (2012).


2011
  1. “Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors”, B. Vincent, Y. Shimura, S. Takeuchi, T. Nishimura, G. Eneman, A. Firrincieli, J. Demeulemeester, A. Vantomme, T. Clarysse, O. Nakatsuka, S. Zaima, J. Dekoster, M. Caymax, and R. Loo,Microelectron. Eng. 88 (4), pp. 342-346 (2011).
  2. “Crystalline orientation dependence of electrical properties of Mn Germanide/Ge(1 1 1) and (0 0 1) Schottky contacts”, T. Nishimura, O. Nakatsuka, S. Akimoto, W. Takeuchi, and S. Zaima, Microelectron. Eng. 88 (5), pp. 605-609 (2011).
  3. “Formation of Ni(Ge1-xSnx) Layers with Solid-Phase Reaction in Ni/Ge1-xSnx/Ge Systems”,  T. Nishimura, Y. Shimura, S. Takeuchi, B. Vincent, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, and S. Zaima, Solid-State Electronics 60 (1), pp. 46-52 (2011).
  4. “Ge1-xSnx stressors for strained-Ge CMOS”, S. Takeuchi, Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, and S. Zaima, Solid-State Electronics 60 (1), pp. 53-57 (2011).
  5. “High-density formation of Ge quantum dots on SiO2”, K. Makihara, M. Ikeda, A. Ohta, S. Takeuchi, Y. Shimura, S. Zaima, and S. Miyazaki, Solid-State Electronics 60 (1), pp. 60-65 (2011).
  6. “Control of Interfacial Properties of Pr-oxide/Ge Gate Stack Structure by Introduction of Nitrogen”, K. Kato, H. Kondo, M. Sakashita, O. Nakatsuka, and S. Zaima, Solid-State Electronics 60 (1), pp. 70-74 (2011).
  7. “Control of Strain Relaxation Behavior of Ge1-xSnx Layers”, Y. Shimura, S. Takeuchi, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, Solid-State Electronics 60 (1), pp. 84-88 (2011).
  8. “Effect of Pr Valence State on Interfacial Structure and Electrical Properties of Pr-oxide/PrON/Ge Gate Stack Structure”, K. Kato, M. Sakashita, W. Takeuchi, H. Kondo, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 50, 04DA17 (7 pages) (2011).
  9. “Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy”, M. Adachi, M. Sakashita, H. Kondo, W. Takeuchi, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 50, 04DA08 (4 pages) (2011).
  10. “Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer”, C. Merckling, X. Sun, Y. Shimura, A. Franquet, B. Vincent, S. Takeuchi, W. Vandervorst, O. Nakatsuka, S. Zaima, R. Loo, and M. Caymax, Appl. Phys. Lett. 98, 192110 (3 pages) (2011).
  11. “Formation of Palladium Silicide Thin Layers on Si(110) Substrates”, R. Suryana, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 50, 05EA09 (5 pages) (2011).
  12. “Characterization of Local Strain around Through-Silicon Via Interconnects by using X-ray Microdiffraction”, O. Nakatsuka, H. Kitada, Y. S. Kim, Y. Mizushima, T. Nakamura, T. Ohba, and S. Zaima, Jpn. J. Appl. Phys. 50, 05ED03 (4 pages) (2011).
  13. “Structural Analysis of Si-Based Nanodot Arrays Self-Organized by Selective Etching of SiGe/Si Films”, M. Takahashi, Y. Nakamura, J. Kikkawa, O. Nakatsuka, S. Zaima, and Akira Sakai , Jpn. J. Appl. Phys. 50 (8), 08LB11 (4 pages) (2011).
  14. “Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure using Radical Nitridation Technique”, K. Kato, S. Kyogoku, M. Sakashita, W. Takeuchi, H. Kondo, S. Takeuchi, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 50 (10), 10PE02 (7 pages) (2011).
  15. “Pr酸化膜/Si構造へのAl導入による界面反応抑制効果”, 古田和也, 竹内和歌奈, 加藤公彦, 坂下満男, 近藤博基, 中塚理, 財満鎭明, 特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第16回研究会）, pp. 51-54 (2011).
  16. “Al2O3界 面層およびラジカル窒化法によるHigh-k/Ge界面構造および電気的特性の制御”, 加藤公彦, 京極真也, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明, 特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第16回研究会）, pp. 55-58 (2011).
  17. “Pr酸化膜/PrON/Ge構造におけるPrの化学結合状態が電気的特性に及ぼす影響”, 加藤公彦, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明, 特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第16回研究会）, pp. 99-102 (2011).
  18. “電流検出型原子間力顕微鏡を 用いた欠陥に起因するPr酸化膜のリーク電流機構の解明”, 足立正樹, 加藤雄三, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明, 特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第16回研究会）, pp. 123-126 (2011).

2010
  1. “Metal-organic chemical vapor deposition of high-dielectric-constant praseodymium oxide films using a cyclopentadienyl precursor”, H. Kondo, S. Sakurai, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, Appl. Phys. Lett. 95, 012105 (2010).
  2. “Low temperature growth of Ge1-xSnx buffer layers for tensile–strained Ge layers”, Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, Thin Solid Films 518 (6), pp. S2-S5 (2010).
  3. “Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology”, N.D. Nguyen, E. Rosseel, S. Takeuchi, J.-L. Everaert, L. Yang, J. Goossens, A. Moussa, T. Clarysse, O. Richard, H. Bender, S. Zaima, A. Sakai, R. Loo, J.C. Lin, W. Vandervorst, M. Caymax, Thin Solid Films 518 (6), pp. S48-S52 (2010).
  4. “Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing”, T. Kato, Y. Nakamura, J. Kikkawa, A. Sakai, E. Toyoda, K. Izunome, O. Nakatsuka, S. Zaima, Y. Imai, S. Kimura, O. Sakata, Thin Solid Films 518 (6), pp. S147-S150 (2010).
  5. “Formation Processes of Ge3N4 Films by Radical Nitridation and Their Electrical Properties”, K. Kato, H. Kondo, , M. Sakashita, and S. Zaima, Thin Solid Films 518 (6), pp. S226-S230 (2010).
  6. “Low-damage surface modification of polymethylmethacrylate with argon–oxygen mixture plasmas driven by multiple low-inductance antenna units”, Y. Setsuhara, K. Cho, K. Takenaka, M. Shiratani, M. Sekine, M. Hori, E. Ikenaga, S. Zaima, Thin Solid Films 518 (13), pp. 3561-3565 (2010).
  7. “Formation of Pr Oxide Films by Atomic Layer Deposition Using Pr(EtCp)3 precursor”, H. Kondo, H. Matsui, K. Furuta, M. Sakashita, and S. Zaima, Jpn. J. Appl. Phys. 49 (2010) 04DA14 (4 pages).
  8. “Crystalline Structures and Electrical Properties of High Nitrogen-Content Hf-Si-N Films”, K. Miyamoto, H. Kondo, and S. Zaima, Jpn. J. Appl. Phys. 49 (2010) 04DA11 (5 pages).
  9. “Mobility Behavior of Ge1-xSnx Layers Grown on Silicon-on-Insulator Substrates”, O. Nakatsuka, N. Tsutsui, Y. Shimura, S. Takeuchi, A. Sakai, and S. Zaima Jpn. J. Appl. Phys. 49 (2010) 04DA10 (4 pages).
  10. “Formation of Palladium Silicide on Heavily Doped Si(001) Substrates Using Ti Intermediate Layer”, R. Suruyana, O. Nakatsuka, and S. Zaima Jpn. J. Appl. Phys. 49 (2010) 05FA09 (5 pages).
  11. “1.2 nm-SiONゲート絶縁膜における局所劣化現象の電流検出型原子間力顕微鏡を用いたナノスケール観察”, 加藤雄三, 平安座朝誠, 坂下満男, 近藤博基, 財満鎭明, 特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第15回研究会）, pp. 105-108 (2010).
  12. “ALD-Pr酸化膜/Ge3N4/Ge構造における界面構造と電気的特性”, 加藤公彦, 近藤博基, 坂下満男, 財満鎭明, 特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第15回研究会）, pp. 121-124 (2010).
  13. “Pr(EtCp)3を 用いたPr酸化膜の原子層堆積とその結晶構造及び電気的特性”, 古田和也, 松井裕高, 近藤博基, 坂下満男, 財満鎭明, 特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第15回研究会）, pp. 125-128 (2010).
  14. “ミクタミクト高窒素組成Hf-Si-Nの結晶構造および電気的特性”, 宮本和明, 近藤博基, 財満鎭明, 特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第15回研究会）, pp. 173-176 (2010).

2009
  1. “Mechanical properties and chemical reactions at the directly bonded Si-Si interface”, E. Toyoda, A. Sakai, T. Senda, H. Isogai, K. Izunome, O. Nakatsuka, M. Ogawa, S. Zaima, Jpn. J. Appl. Phys. 48, pp. 011202-1-5 (2009).
  2. “Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates”, E. Toyoda, A. Sakai, H. Isogai, T. Senda, K. Izunome, K. Omote, O. Nakatsuka, S. Zaima, Jpn. J. Appl. Phys. 48, pp. 021208-1-4 (2009).
  3. “Thermal Stability and Scalability of Mictamict Ti-Si-N Metal-Oxide-Semiconductor Gate Electrodes”, H. Kondo, K. Furumai, M. Sakashita, A. Sakai, and S. Zaima, Jpn. J. Appl. Phys. 48, pp. 04C012-1-5 (2009).
  4. “Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge1-xSnx Buffer Layers for Tensile-Strained Ge Layers”, Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, Jpn. J. Appl. Phys. 48, pp. 04C130-1-4 (2009).
  5. “Effects of Atomic Layer Deposition-Al2O3 Interface Layers on Interfacial Properties of Ge Metal-Oxide-Semiconductor Capacitors”, R. Kato, S. Kyogoku, M. Sakashita, H. Kondo, and S. Zaima, Jpn. J. Appl. Phys. 48, pp. 05DA04-1-4 (2009).
  6. “Nitrogen-Content Dependence of Crystalline Structures and Resistivity of Hf-Si-N Gate Electrodes for Metal-Oxide-Semiconductor Field-Effect Transistors”, K. Miyamoto, K. Furumai, B. E. Urban, H. Kondo, and S. Zaima, Jpn. J. Appl. Phys. 48, pp. 045505-1-4 (2009).
  7. “Microstructures in directly bonded Si substrates”, Y. Ohara, T. Ueda, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, S. Kimura, T. Sakata, H. Mori, Solid-State Electronics, 53 (8), pp. 837-840 (2009).
  8. “Plasma surface treatment of polymers with inductivity-coupled RF plasmas driven by low-inductance antenna units”, Y. Setsuhara, K. Cho, K. Takenaka, A. Ebe, M. Shiratani, M. Sekine, M. Hori, E. Ikenaga, H. Kondo, O. Nakatsuka, S. Zaima, Thin Solid Films 518 (3), pp. 1006-1011 (2009).
  9. “Novel Method to Introduce Uniaxial Tensile Strain in Ge by Microfabrication of Ge/Si1-xGex Structures on Si(001) Substrates”, T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, M. Ogawa, and S. Zaima, Solid-State Electronics 53 (11), pp. 1198-1201 (2009).
  10. “Control of Dislocations and Sn Precipitations for Fabrication of Tensile-strained Ge on Ge1-x Snx Buffer Layer”, Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, Trans. MRS-J, 34 (2), 301-304 (2009).
  11. “Formation of Uniaxial Tensile-strained Ge by Using Micro-patterning of Ge/Si1-xGe x/Si Structures”, T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, and S. Zaima, Trans. MRS-J, 34 (2), 305-308 (2009).
  12. “アモルファスTi-Si-N MOSゲート電極の熱的安定性およびスケーラビリティ”, 宮本和明，古米孝平，近藤博基，坂下満男，財満鎭明, 特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第14回研究会）, pp. 89-92 (2009).
  13. “Pr(EtCp)3を用いたMOCVD法による Pr酸化膜の作製およびその電気的特性の評価”, 松井裕高，櫻井晋也，近藤博基，坂下満男，財満鎭明, 特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第14回研究会）, pp. 125-128 (2009).
  14. “Al2O3界面層挿入によるLaAlO3/Ge 界面制御効果”, 加藤亮祐，京極真也，坂下満男，近藤博基，財満鎭明, 特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第14回研究会）, pp. 133-136 (2009).
  15. “ラジカル窒化法によるGe3N4/Ge構造の形成過程”, 加藤公彦，小田繁尚，近藤博基，財満鎭明, 特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第14回研究会）, pp. 163-166 (2009).
  16. “アモルファスTi-Si-NおよびHf-Si-N MOSゲート電極の結晶構造と抵抗率の窒素濃度依存性”, 近藤博基，宮本和明，古米孝平，坂下満男，財満鎭明, 特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第14回研究会）, pp. 191-194 (2009).
  17. “ラジカル窒化法によるHigh-k/Ge界面構造制御”, 加藤公彦, 近藤博基, 坂下満男, 財満鎭明, Technical report of IEICE (信学技報) 109 (87), pp. 39-44, (2009).
  18. “LaAlO/Ge構造へのALD-Al2O3界面制御層挿入の効果”, 坂下満男, 加藤亮祐, 京極真也, 近藤博基, 財満鎭明, Technical report of IEICE (信学技報) 109 (87), pp. 61-66, (2009).
  19. “Pt(EtCp)3を用いた原子層堆積法による Pr酸化膜の形成”, 近藤博基, 古田和也, 松井裕高, 坂下満男, 財満鎭明, Technical report of IEICE (信学技報) 109 (87), pp. 81-85, (2009).

2008
  1. “Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi2/Si Schottky Contacts Formed from Ni/Ti/Si System”, O. Nakatsuka, A. Suzuki, S. Akimoto, A. Sakai, M. Ogawa and S. Zaima, Jpn. J. Appl. Phys. 47 (4), pp. 2402-2406 (2008).
  2. “Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors”, K. Furumai, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, Jpn. J. Appl. Phys. 47 (4), pp. 2420-2424 (2008).
  3. “Scanning Tunneling Microscopy Observation of Initial Growth of Sn and Ge1-xSnx Layers on Ge(001) Substrates”, M. Yamazaki, S. Takeuchi, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima, Appl. Surf. Sci. 254 (19), 6048-60651 (2008).
  4. “Growth of highly strain-relaxed Ge1-xSnx /virtual Ge by a Sn precipitation controlled compositionally step-graded method”, S. Takeuchi, Y. Shimura, O. Nakatsuka, S. Zaima, M. Ogawa, and A. Sakai, Appl. Phys. Lett. 92, 231916 (2008).
  5. “Physical origin of suppressed effective work function modulation at boron segregated NiSi/SiON interface”, Y. Tsuchiya, M. Yoshik, K. Sekine, T. Saito, K. Nakajima, T. Aoyama, J. Koga, A. Nishiyama, M. Koyama, M. Ogawa, and S. Zaima, J. Appl. Phys. 103, 124503 (2008).
  6. “Effect of alcohol sources on synthesis of single-walled carbon nanotubes”, S. Oida, A. Sakai, O. Nakatsuka, M. Ogawa and S. Zaima, Appl. Surf. Sci., 254 (23) 7697-7702 (2008).
  7. “Epitaxial Ag Layers on Si Substrates as a Buffer Layer for Carbon Nanotube Growth”, S. Oida, A. Sakai, O. Nakatsuka, M. Ogawa and S. Zaima, Jpn. J. Appl. Phys. 47 pp. 3742-3747 (2008).
  8. “Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO2 Systems”, Y. Tsuchiya, M. Yoshiki, J. Koga, A. Nishiyama, M. Koyama, M. Ogawa, and S. Zaima, Jpn. J. Appl. Phys. 47 pp. 8321-8327 (2008).
  9. “Silicide and germanide technology for contacts and gates in MOSFET applications”, S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, and M. Ogawa, Thin Solid Films 517 (1) pp. 80-83 (2008).
  10. “Tensile strained Ge layers on strain-relaxed Ge1 −xSnx/virtual Ge substrates”, S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima, Thin Solid Films 517 (1) pp. 159-162 (2008).
  11. “Formation of high-density Si nanodots by agglomeration of ultra-thin amorphous Si films”, H.Kondo, T. Ueyama, E. Ikenaga, K. Kobayashi, A. Sakai, M. Ogawa, and S. Zaima, Thin Solid Films 517 (1) pp. 297-299 (2008).
  12. “Characterization of bonding structures of directly bonded hybrid crystal orientation substrates”, E. Toyoda, A. Sakai, O. Nakatsuka, H. Isogai, T. Senda, K. Izunome, M. Ogawa, and S. Zaima, Thin Solid Films, 517 (1), pp. 323-326 (2008).
  13. “窒素ラジカル暴露によるGe(001)表面処理”, 近藤博基, 藤田美里, 酒井朗, 小川正毅, 財満鎭明, 特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第13回研究会）, pp. 113-118 (2008).
  14. “Ge基板上に作製したPr酸化膜の評価”, 坂下満男, 鬼頭伸幸, 加藤亮祐, 近藤博基, 中塚理, 酒井朗, 小川正毅, 財満鎭明, 特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第13回研究会）, pp. 237-242 (2008).
  15. “ミクタミクトTiSiNゲートMOSキャパシタの結晶構造及び電気的特性の評価”, 古米孝平, 近藤博基, 坂下満男, 酒井朗, 小川正毅, 財満鎭明, 特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第13回研究会）, pp. 267-272 (2008).

2007
  1. “Strain relaxation of patterned Ge and SiGe layers on Si(001) substrates”, S. Mochizuki, A. Sakai, O. Nakatsuka, H. Kondo, K. Yukawa, K. Izunome, T. Senda, E. Toyoda, M. Ogawa, and S. Zaima, Semicond. Sci. Tech. 22 (1), pp. S132-S136 (2007).
  2. “Growth and structure evaluation of strain-relaxed Ge1-xSnx buffer layers grown on various types of substrates”, S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, and S. Zaima, Semicond. Sci. Tech. 22 (1), pp. S231-S235 (2007).
  3. “Growth and Energy Bandgap Formation of Silicon Nitride Films in Radical Nitridation”, H. Kondo, K. Kawaai, A. Sakai, M. Hori, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 46 (1), pp. 71-75 (2007).
  4. “Composition Dependence of Work Function in Metal (Ni,Pt) Germanide Gate Electrodes”, D. Ikeno, Y. Kaneko, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, Jpn. J. Appl. Phys. 46 (4B), pp. 1865-1869 (2007).
  5. “Behavior of Local Charge Trapping Sites in La2O3-Al2O3 Composite Films under Constant Voltage Stress”, T. Sago, A. Seko, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, Jpn. J. Appl. Phys. 46 (4B), pp. 1879-1884 (2007).
  6. “Physical mechanism of effective work function modulation caused by impurity segregation at Ni silicide/SiO2 interfaces”, Y. Tsuchiya, M. Yoshiki, A. Kinoshita, M. Koyama, J. Koga, M. Ogawa, and S. Zaima, J. Appl. Phys. 102, pp. 104504-1-7 (2007).
  7. “Ge(001)表面の酸素エッチングおよび初期酸化過程の原子スケール評価”, 山崎理弘, 若園恭伸, 酒井朗, 中塚理, 竹内正太郎, 小川正毅, 財満鎭明, 特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第12回研究会）, pp. 197-202 (2007).
  8. “パルスレーザー蒸着法によるGe基板上へのPr酸化膜の作製とその構造及び電気的特性評価”, 鬼頭伸幸, 坂下満男, 酒井朗, 中塚理, 近藤博基, 小川正毅, 財満鎭明, 特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第12回研究会）, pp. 251-256 (2007).
  9. “Pt-germanideゲート電極の結晶構造及び電気的特性の評価” , 池野大輔, 古米孝平, 近藤博基, 坂下満男, 酒井朗, 小川正毅, 財満鎭明, 特別研究会研究報告“ゲートスタック研究会-材料・プロセス・評価の物理-”（第12回研究会）, pp. 277-282 (2007).
  10. “シリコン表面の窒化初期過程とエネルギーバンドキャップの形成”, 近藤博基, 財満鎭明, 堀勝, 酒井朗, 小川正毅, 真空 50 (11), pp. 665-671 (2007）.

2006
  1. “Initial Growth Process of TiN Films in Ultrahigh-Vacuum Rapid Thermal Chemical Vapor Deposition”, Y. Okuda, S. Naito, O. Nakatsuka, H. Kondo, T. Okuhara, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 45 (1A), pp. 49-53 (2006).
  2. “Local strain in SiGe/Si heterostructures analyzed by X-ray microdiffraction”, S. Mochizuki, A. Sakai, N. Taoka, O. Nakatsuka, S. Takeda, S. Kimura, M. Ogawa, and S. Zaima, Thin Solid Films 508 (1-2), pp. 128-131 (2006).
  3. “Control of misfit dislocations in strain-relaxed SiGe buffer layers on SOI substrates”, N. Taoka, A. Sakai, S. Mochizuki, O. Nakatsuka, M. Ogawa and S. Zaima, Thin Solid Films 508 (1-2), pp. 147-151 (2006).
  4. “Film Structures and Electrical Properties of Pr Silicate Formed by Pulsed Laser Deposition”, K. Ariyoshi, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, Jpn. J. Appl. Phys. 45 (4B), pp. 2903-2907 (2006).
  5. “Characterization of Local Current Leakage in La2O3-Al2O3 Composite Films by Conductive Atomic Force Microscopy”, A. Seko, T. Sago, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, Jpn. J. Appl. Phys. 45 (4B), pp. 2954-2960 (2006).
  6. “Electrical properties of epitaxial NiSi2/Si contacts with extremely flat interface formed in Ni/Ti/Si(0 0 1) system”, O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, and S. Zaima, Microelectron. Eng. 83 (11-12), pp. 2272-2276 (2006).
  7. “Epitaxial growth of (1 1 1)ZrN thin films on (1 1 1)Si substrate by reactive sputtering and their surface morphologies”, H. Yanagisawa, S. Shinkai, K. Sasaki, J. Sakurai, Y. Abe, A. Sakai and S. Zaima, J. Crystal Grwoth 297 (1), pp. 80-86 (2006).
  8. “Ni-Silicide/Si and SiGe(C) Contact Technology for ULSI Applications”, O. Nakastuka, S. Zaima, A. Sakai, and M. Ogawa, in Proc.of the 14th annual IEEE International Conference on Advanced Thermal Processing of Semiconductors, pp. 31-37 (2006).
  9. “次世代シリコンULSIに向けたIV族系半導体ヘテロ界面のひずみと転位の制御技術と評価”, 酒井朗, 財満鎭明, 応用物理 75 (4), pp. 426-434 (2006).
  10. “La2O3-Al2O3複合膜における定電圧 ストレス印加時の局所的な電荷捕獲とその放出過程”, 佐合寿文, 世古明義, 坂下満男, 酒井朗, 小川正毅, 財満鎭明, Technical report of IEICE (信学技報) 106 (108) p. 19 (2006).
  11. “-展望-　電流検出型原子間力顕微鏡を用いた極薄ゲート絶縁膜の信頼性評価”, 世古明義, 坂下満男, 酒井朗, 財満鎭明, 日本信頼性学会誌「信頼性」28 (3),  pp. 163-174, (2006).
  12. “La2O3-Al2O3複合膜中の局所電流 リークの起源と酸素熱処理の効果”, 世古明義, 佐合寿文, 坂下満男, 酒井朗, 小川正毅, 財満鎭明, 応用物理学会 薄膜・表面物理分科会/シリコンテクノロジー分科会共催特別研究会研究報告 ゲートスタック研究会 ‐材料・プロセス・評価の物理‐(第11回研究会), pp.389-395, (2006).
  13. “Conductive-AFMによるゲート絶縁膜劣化現象のナノスケール評価”, 財満鎭明, 世古明義, 渡辺行彦, 坂下満男, 酒井朗, 小川正毅, 半導体・集積回路技術　第70回シンポジウム　講演論文集 (2006).

2005
  1. “Epitaxial Growth of (001)ZrN Thin Films on (001)Si by Low Temperature Process”, H. Yanagisawa, S. Shinkai, K. Sasaki, Y. Abe, A. Sakai, and S. Zaima, Jpn. J. Appl. Phys. 44 (1A), pp. 343-349 (2005).
  2. “Synthesis of carbon nanotube peabods directly on Si substrates”, Y. Ohno, Y. Kurokawa, S. Kishimoto, T. Mizutani, T. Shimada, M. Ishida, T. Okazaki, H. Shinohara, Y. Murakami, S. Maruyama, A. Sakai, and K. Hiraga, Appl. Phys. Lett. 86, pp. 23109-23111 (2005).
  3. “Initial growth behaviors of SiGeC in SiGe and C alternate deposition”, S. Takeuchi, O. Nakatsuka, Y. Wakazono, A. Sakai, S. Zaima, and Y. Yasuda, Mater. Sci. Semicond. Proc. 8 (1-3), pp. 5-9 (2005).
  4. “Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations”, N. Taoka, A. Sakai, T. Egawa, O. Nakatsuka, S. Zaima, and Y. Yasuda, Mater. Sci. Semicond. Proc. 8 (1-3), pp. 131-135 (2005).
  5. “Thermal Stability and Electrical Properties of (La2O3)1-x(Al2O3)x Composite Films”, R. Fujitsuka, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 44 (4B), pp. 2428-2432 (2005).
  6. “Low-Temperature Formation of Epitaxial NiSi2 Layers with Solid-Phase Reaction in Ni/Ti/Si(001) Systems”, O. Nakatsuka, K. Okubo, Y. Tsuchiya, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 44 (5A), pp. 2945-2947 (2005).
  7. “Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems”, A. Sakai, N. Taoka, O. Nakatsuka, S. Zaima, and Yukio Yasuda, Appl. Phys. Lett. 86, pp. 221916-221918 (2005).
  8. “Analysis of Stressed-Gate SiO2 Films with Electron Injection by Conductive Atomic Force Microscopy”, A. Seko, Y. Watanabe, H. Kondo, A. Sakai, S. Zaima, and Y. Yasuda, Electronics and Communications in Japan, Part 2, 88 (6) pp. 18-26 (2005).
  9. “Fabrication and Evaluation of Floating Gate Memories with Surface-Nitrided Si Nanocrystals”, S. Naito, T. Ueyama, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, Jpn. J. Appl. Phys. 44 (7B), pp. 5687-5691 (2005).
  10. “Fabrication technology of SiGe hetero-structures and their properties”, Y. Shiraki and A. Sakai, Surface Science Reports 59 (7-8), pp. 153-207 (2005).
  11. “Analysis of microstructures in SiGe buffer layers on silicon-on-insulator substrates”, N. Taoka, A. Sakai, S. Mochizuki, O. Nakatsuka, M. Ogawa, S. Zaima, T. Tezuka, N. Sugiyama, and S. Takagi, Jpn. J. Appl. Phys. 44 (10), pp. 7356-7363 (2005).
  12. “Analysis of Local Breakdown Process in Stressed Gate SiO2 Films by Conductive Atomic Force Microscopy”, A. Seko, Y. Watanabe, H. Kondo, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 44 (10), pp. 7582-7587 (2005).
  13. “Improvement in NiSi/Si contact properties with C-implantation”, O. Nakatsuka, K. Okubo, A. Sakai, M. Ogawa, Y. Yasuda, and S. Zaima, Microelectron. Eng. 82 (3-4), pp. 479-484 (2005).
  14. “Thermal stability and electrical properties of Ni-silicide on C-incorporated Si”, O. Nakatsuka, K. Okubo, A. Sakai, M. Ogawa, S. Zaima, J. Murota, and Y. Yasuda, in Advanced Metallization Conference 2004 (AMC2004), (Editors: D. Erb, P. Ramm, K. Masu, and A.Osaki), pp. 293-298 (2005).
  15. “電流検出型原子間力顕微鏡を用いたLa2O3-Al2O3複 合膜の局所リーク電流評価”, 世古明義, 佐合寿文, 藤塚良太, 坂下満男, 酒井朗, 小川正毅, 財満鎭明, Technical report of IEICE (信学技報) 104 (109) p. 35 (2005).
  16. “SiGeバッファ層の歪緩和および転位構造制御”, 田岡紀之, 酒井朗, 望月省吾, 中塚理, 小川正毅, 財満鎭明, 日本結晶成長学会誌 32, pp. 89-98 (2005).

2004
  1. “Growth of Carbon Nanotubes by Microwave-excited Non-Equilibrium Atmospheric-Pressure Plasma”, A. Matsushita, M. Nagai, K. Yamakawa, M. Hiramatsu, A. Sakai, M. Hori, T. Goto, and S. Zaima, Jpn. J. Appl. Phys. 43 (1), pp. 424-425 (2004).
  2. “Microscopic Analysis of Stress-Induced Leakage Current in Stressed Gate SiO2 Films Using Conductive Atomic Force Microscopy” Y. Watanabe, A. Seko, H. Kondo, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 43 (2A), pp. L144-L147 (2004).
  3. “Interfacial reaction and electrical properties in Ni/Si and Ni/SiGe(C) contacts”, S. Zaima, O. Nakatsuka, A. Sakai, J. Murota, and Y. Yasuda, Appl. Surf. Sci. 224 (1-4), pp. 215-221 (2004).
  4. “Influence of Si1-xGex interlayer on the initial growth of SiGeC on Si(100)”, S. Ariyoshi, S. Takeuchi, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda, Appl. Surf. Sci. 224 (1-4), pp. 117-121 (2004).
  5. “Dislocation structures and strain-relaxation in SiGe buffer layers on Si (0 0 1) substrates with an ultra-thin Ge interlayer”, T. Yamamoto, A. Sakai, T. Egawa, N. Taoka, O. Nakatsuka, S. Zaima, and Y. Yasuda, Appl. Surf. Sci. 224 (1-4), pp. 108-112 (2004).
  6. “Strain-relaxation mechanisms of SiGe layers formed by two-step growth on Si(0 0 1) substrates”, T. Egawa, A. Sakai, T. Yamamoto, N. Taoka, O. Nakatsuka, S. Zaima and Y. Yasuda, Appl. Surf. Sci. 224 (1-4), pp. 104-107 (2004).
  7. “Pulsed Laser Deposition and Analysis for Structural and Electrical Properties of HfO2-TiO2 Composite Films”, K. Honda, A. Sakai, M. Sakashita, H. Ikeda, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 43 (4A), pp. 1571-1576 (2004).
  8. “Conductive Atomic Force Microscopy Analysis for Local Electrical Characteristics in Stressed SiO2 Gate Films”, Y. Watanabe, A. Seko, H. Kondo, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 43 (4B), pp. 1843-1847 (2004).
  9. “Influence of structural variation of Ni silicide thin films on electrical property for contact materials”, K. Okubo, Y. Tsuchiya, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 43 (4B), pp. 1896-1900 (2004).
  10. “Influence of C incorporation on the initial growth of epitaxial NiSi2 on Si(100)”, E. Okada, O. Nakatsuka, S. Oida, A. Sakai, S. Zaima, and Y. Yasuda, Appl. Surf. Sci. 237 (1-4), pp. 150-155 (2004).
  11. “Growth of silicon nanocrystal dots with high number density by ultra-high vacuum chemical vapor deposition”, S. Naito, M. Satake, H. Kondo, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 43 (6B) pp. 3779-3783 (2004).
  12. “Detection and Characterization of Stress-Induced Defects in Gate SiO2 Films by Conductive Atomic Force Microscopy”, Y. Watanabe, A. Seko, H. Kondo, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 43 (7B), pp. 4679-4682 (2004).
  13. “Behavior of Local Current Leakage in Stressed Gate SiO2 Films Analyzed by Conductive Atomic Force Microscopy”, A. Seko, Y. Watanabe, H. Kondo, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 43 (7B), pp. 4683-4686 (2004).
  14. “Effects of Nitrogen Addition to Microwave Oxygen Plasma in Surface Wave with Disk-Plate Window and Photoresist Ashing”, K. Shinagawa, J. Yamamoto, S. Ohgawara, S. Zaima, and M. Furukawa, Jpn. J. Appl. Phys. 43 (10), pp. 6858-6862 (2004).
  15. “HfO2 Film Formation Combined with Radical Nitridation and Its Electrical Characteristic”, R. Takahashi, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 43 (11B), pp. 7821-7825 (2004).
  16. “Praseodymium silicate formed by postdeposition high-temperature annealing”, A. Sakai, S. Sakashita, M. Sakashita, Y. Yasuda, S. Zaima, and S. Miyazaki, Appl. Phys. Lett. 85 (22), pp. 5322-5324 (2004).
  17. “Control of Ni/Si interfacial reaction and NiSi technology for ULSI applications”, S. Zaima, O. Nakatsuka, A. Sakai, and Y. Yasuda, in Proc. of IUMRS International Conference in Asia 2004, (2004).
  18. “Preparation and Evaluation of NiGe Gate Electrodes for Metal-Oxide-Semiconductor Devices”, Y. Kaneko, H. Kondo, A. Sakai, S. Zaima, and Y. Yasuda, in Proc. of the First International Symposium SiGe: Materials, Processing, and Devices, vol. 2004-07, pp. 1107-1111 (2004).
  19. “電流注入ストレスを加えたゲート酸化膜の電流検出型原子間力顕微鏡による解析”, 世古明義, 渡辺行彦, 近藤博基, 酒井朗, 財満鎭明, 安田幸夫, 電子情報通信学会論文誌 J87-C (8), pp. 616-624 (2004).
  20. “Si及びSi1-x-yGexCy上のNiシリサイド形成”, 中塚理, 酒井朗, 財満鎭明, 安田幸夫, 電気学会研究会資料(電子材料研究会), EFM-04, pp. 25-30 (2004).
  21. “ラジカル窒化過程におけるエネルギーバンドギャップ形成機構のSTM/STS解析”, 近藤博基, 河合圭悟, 宮崎香代子, 酒井朗, 財満鎭明, 安田幸夫, 応用物理学会分科会シリコンテクノロジー資料, No. 61-1, pp. 26-31, (2004).
  22. “電流検出型原子間力顕微鏡を用いたゲート絶縁膜の局所リーク電流評価”, 世古明義、渡辺行彦、近藤博基、酒井朗、財満鎭明、安田幸夫, 応用物理学会分科会シリコンテクノロジー資料, No. 61-2, pp. 31-36, (2004).

（2003年以前は当研究室の前 身である安田研究室における業績を含みます。）

2003
  1. “Contact resistivity between tungsten and impurity (P and B)-doped Si1-x-yGexCy epitaxial layer”, J. Noh, M. Sakuraba, J. Murota, S. Zaima, and Y. Yasuda, Appl. Surf. Sci. 212-213, pp. 679-683 (2003).
  2. “Control in the initial growth stage of heteroepitaxial Si1-x-yGexCy on Si(0 0 1) substrates”, S. Zaima, A. Sakai, and Y. Yasuda, Appl. Surf. Sci. 212-213, pp. 184-192 (2003).
  3. “Effect of Al Interlayers on Two-Step Epitaxial Growth of CoSi2 on Si(100) ”, O. Nakatsuka, H. Onoda , E. Okada, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Appl. Surf. Sci. 216, (1-4), pp. 174-180 (2003).
  4. “Local Leakage Current of HfO2 Thin Films Characterized by Conducting Atomic Force Microscopy”, H. Ikeda, T. Goto, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 42 (4B), pp. 1949-1953 (2003).
  5. “Scanning Tunneling Microscopy of Initial Nitridation Processes on Oxidized Si(100) Surface with Radical Nitrogen”, R. Takahashi, Y. Kobayashi, H. Ikeda, M. Sakashita, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 42 (4B), pp. 1966-1970 (2003).
  6. “Novel Nonvolatile Random-Access Memory with Si Nanocrystals for Ultralow-Power Scheme”, A. Shibata, H. Kotaki, T. Ogura, N. Arai, K. Adachi, A. Kito, S. Kakimoto, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 42 (4B), pp. 2387-2390 (2003).
  7. “High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems”, K. Kobayashi, M. Yabashi, Y. Takata, T. Tokushima, S. Shin, K. Tamasaku, D. Miwa, T. Ishikawa, H. Nohira, T. Hattori, Y. Sugita, O. Nakatsuka, A. Sakai, and S. Zaima, Appl. Phys. Lett. 83 (5), pp. 1005-1007 (2003)
  8. “Surface and Interface Smoothing of Epitaxial CoSi2 Films by Solid-Phase Epitaxy Using Adsorbed Oxygen Layers and Two-Step Growth on Si(001) Surfaces”, Y. Hayashi, A. Sakai, H. Ikeda, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 42 (11), pp. 7039-7044 (2003).
  9. “Reactive Deposition Epitaxy of CoSi2 Films on Clean and Oxygen-Adsorbed Si(001) Surfaces”, Y. Hayashi, A. Sakai, H. Ikeda, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 42 (12), pp. 7482-7488 (2003).
  10. “Ultra-high vacuum rapid thermal chemical vapor deposition for formation of TiN as barrier metals”, S. Naito, M. Okada, O. Nakatsuka, T. Okuhara, A. Sakai, S. Zaima, and Y. Yasuda, in Rapid Thermal Processing for Future Semiconductor Devices (edited by Hisashi Fukuda, Elsevier, Amsterdam), pp. 29-35 (2003).
  11. “電子注入ストレスを加えたゲート酸化膜の電流検出型原子間力顕微鏡による解析”, 世古明義, 渡辺行彦, 近藤博基, 酒井朗, 財満鎭明, 安田幸夫, Technical report of IEICE (信学技報) 103, No. 148, pp. 1-6 (2003).

2002
  1. “Study on solid-phase reactions in Ti/p+-Si1-x-yGexCy/Si(100) cintacts”, A. Tobioka, Y. Tsuchiya, H. Ikeda, A. Sakai, S. Zaima, J. Murota, and Y. Yasuda, Mater. Sci. Eng., Vol. B89, pp. 373-377 (2002).
  2. “Characterization of defect traps in SiO2 thin films influence of temperature on defects”, J.-Y. Rosaye, N. Kurumado, M. Sakashita, H. Ikeda, A. Sakai, P. Mialhe, J.-P. Charles, S. Zaima, Y. Yasuda, and Y. Watanabe, Microelectronics Journal 33 (5-6), pp. 429-436 (2002).
  3. “Growth processes and electrical characteristics of silicon nitride films formed on Si(100) by radical nitrogen”, H. Ikeda, D. Matsushita, S. Naito, K. Ohmori, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 41 (4B) pp. 2463-2467, (2002).
  4. “Structural and electrical characteristics of HfO2 films fabricated by pulsed laser deposition”, H. Ikeda, S. Goto, K. Honda, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 41 (4B), pp. 2476-2479 (2002).
  5. “Electrical properties and solid-phase reactions in Ni/Si(100) contacts”, Y. Tsuchiya, A. Tobioka, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 41 (4B), pp. 2450-2454. (2002).
  6. “Electrical Properties of Ni silicide/silicon contact”, Y. Tsuchiya, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, in Proc. Advanced Metallization Conference 2001 (Edited by A. J. Mckerrow, Y. S.-Diamand, S. Zaima, and T. Ohba, Materials Research Society, Warrendale, Pennsylvania) pp. 679-684 (2002).
  7. “シリコンナノテクノロジー”, 財満鎭明, 日本機械学会誌, 105, pp. 16-20 (2002).
  8. “超微細化に向けたULSI薄膜技術”, 財満鎭明, 安田幸夫, 表面技術 53 (12), pp. 32-36 (2002).
  9. “ヘテロエピタキシャル成長における歪み緩和と貫通転位の低減”, 酒井朗, 財満鎭明, 安田幸夫, 日本結晶成長学会誌 29 (5), pp. 423-430 (2002).

2001
  1. “Local electrical characteristics of ultra-thin SiO2 films formed on Si(100) surfaces”, H. Ikeda, N. Kurumado, K. Ohmori, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda, Surf. Sci. 493, pp. 653-658 (2001).
  2. “Application of a two-step growth to the formation of epitaxial CoSi2 films on Si(001) surfaces: Comparative study using reactive deposition epitaxy”, Y. Hayashi, T. Katoh, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 40, No. 1, pp. 269-275 (2001).
  3. “Microscopic Observation of X-ray Irradiation Damages in Ultra-Thin SiO2 Films”, K. Ohmori, T. Goto, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 40 (4), pp. 2823-2826 (2001).
  4. “Atomic-scale characterization of nitridation processes on Si(100)-2x1 surfaces by radical nitrogen”, D. Matsushita, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 40 (4), pp. 2827-2829 (2001).
  5. “Atomistic evolution of Si1-x-yGexCy thin films on Si(001) surfaces”, A. Sakai, Y. Torige, M. Okada, H. Ikeda, Y. Yasuda, and S. Zaima, Appl. Phys. Lett. 79 (20), pp. 3242-3244 (2001).
  6. “Reduction of threading dislocation density in SiGe layers on Si (001) using a two-step strain-relaxation procedure”, A. Sakai, K. Sugimoto, T. Yamamoto, M. Okada, H. Ikeda, Y. Yasuda, and S. Zaima, Appl. Phys. Lett. 79 (21), pp. 3398-3400 (2001).
  7. “Characterization of deffect traps in SiO2 thin films”, J.-Y. Rosaye, P. Mialhe, J.-P. Charles, M. Sakashita, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Active and Passive Elec. Comp. 24, 169-175 (2001).
  8. “Interface reactions in Ti/Si1-xGex/Si(100) studied by TEM and ADF imaging on a newly installed 200 kV TEM/STEM”, N. Tanaka, J. J. Hu, J. Yamasaki, Y. Murooka, S. Zaima, and Y. Yasuda, Electron Microscopy and Analysis 172, pp. 373-376 (2001).
  9. “Real-time observation of initial oxidation on highly B-doped Si(100)-2x1 surfaces using scanning tunneling microscopy”, K. Ohmori, M. Tsukakoshi, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, in Proceedings of 25th International Conference on the Physics of Semiconductors, pp. 329-330 (2001).
  10. “シリコンLSI新材料技術の現状と課題　−フロントエンドプロセス−”, 財満鎭明, 安田幸夫, 応用物理 70 (9), pp. 1050-1060 (2001).
  11. “パルスレーザー蒸着法による高誘電率薄膜の作製と電気的特性”, 池田浩也, 後藤覚, 本多一隆, 坂下満男, 酒井朗, 財満鎭明, 安田幸夫, Technical report of IEICE(信学技報) SDM2001-57, pp. 25-29 (2001).

2000
  1. “Nucleation and growth of Ge on Si(111) in solid phase epitaxy”, I. Suzumura, M. Okada, A. Muto, Y. Torige, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Thin Solid Films 369, pp. 116- 120, (2000).
  2. “Epitaxial growth of heavily B-doped SiGe films and interfacial reaction of Ti/B-doped SiGe bilayer structure using rapid thermal processing”, M. Okada, H. Kamioka, H. Matsuo, Y. Fukuda, S. Zaima, K. Kawamura, and Y. Yasuda, Thin Solid Films 369, pp. 130- 133, (2000).
  3. “A study on the local bonding structures of oxidized Si(111) surfaces by HREELS”, K. Sato, Y. Nakagawa, H. Ikeda, S. Zaima, Y. Yasuda, Thin Solid Films 369, pp. 277- 280, (2000).
  4. “Scanning tunneling microscopy/scanning tunneling spectroscopy of initial nitridation process of Si(100)-2x1 surfaces”, D. Matsushita, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Thin Solid Films 369, pp. 293- 296, (2000).
  5. “Interfacial reactions of Ti/ and Zr/Si1-xGex/Si contacts with rapid thermal annealing”, Y. Yasuda, O. Nakatsuka, S. Zaima, Thin Solid Films 373, pp. 73- 78, (2000).
  6. “Control of crystal structure and ferroelectric properties of Pb(ZrxTi1-x)O3 films formed by pulsed laser deposition”, H. Fujita, S. Goto, M. Sakashita, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 39 (12B), pp. 7035-7039, (2000).
  7. “Orientation dependence of ferroelectric properties of Pb(ZrxTi1-x)O3 thin films on Pt/SiO2/Si substrates”, H. Fujita, M. Imade, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda, Appl. Surf. Sci. 159-160, pp. 134-137, (2000).
  8. “Selectivity for O adsorption position on dihydride Si(100) surfaces”, Hiroyuki Kageshima, Kenji Shiraishi, H. Ikeda, S. Zaima, Y. Yasuda, Appl. Surf. Sci. 159-160, pp. 14-18, (2000).
  9. “Dependence of contact resistivity on impurity concentration in Co/Si systems”, O. Nakatsuka, T. Ashizawa, K. Nakai, A. Tobioka, A. Sakai, S. Zaima, and Y. Yasuda, Appl. Surf. Sci. 159-160, pp. 149-153, (2000).
  10. “A study on initial oxidation of Si(100)-2x1 surfaces by coaxial impact collision ion scattering spectroscopy (CAICISS)”, M. Wasekura, M. Higashi, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Appl. Surf. Sci. 159-160, pp. 35-40, (2000).
  11. “Trap creation in ultrathin SiO2 films due to electron injection studied by scanning tunneling microscopy/scanning tunneling spectroscopy”, K. Ohmori, S. Zaima, and Y. Yasuda, Appl. Surf. Sci. 162-163, pp. 395-400, (2000).
  12. “Low resistivity contact materials for ULSI applications and metal/silicon interfaces”, S. Zaima, Y. Yasuda, Ext. Abst. 19th Electronic Symp. Izu-Nagaoka, pp. 3-6, (2000).
  13. “The origin and the creation mechanism of positive charges in silicon oxide films”, K. Ohmori, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, in Proc. of the 4th Int. Symp. on the Physics and Chemistry of SiO2 and the Si-SiO2 interface, pp. 345-352, (2000).
  14. “シリコン表面の初期酸化と水素”, 安田幸夫, 池田浩也、財満鎭明, J. Vac. Soc. Jap.（真空） 43 (3), pp. 440-440, (2000).
  15. “収束イオンビームを用いたナノチャネルMOSFETの作製とクーロンブロッケード現象”, 安田幸夫, 泉川健太、酒井朗、財満鎭明, 電子情報通信学会信学技報, ED99-291, SDM99-184(2000-02), pp. 7-11, (2000).

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