Zaima&Nakatsuka Laboratory

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Zaima and Nakatsuka Laboratory

Nano-Structured Electronic Device Engineering Laboratory,
Research Group of Nano-Structured Device Engineering,
Department of Matrials Physics,
Graduate School of Engineering,
Nagoya University

Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
Phone: +81-52-789-3819, FAX: +81-52-789-2760

[Japanese page]

Our review paper "Growth and applications of GeSn-related group-IV semiconductor materials" (S. Zaima et al., Sci. Technol. Adv. Mater. 16, 043502 (22 pages) (2015).) has been published in OPEN ACCESS journal, STAM. (July 28, 2015)

Our original paper, which is a collaborative reserach with imec (Belgium), “Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors”, (B. Vincent et al., Microelectron. Eng. 88(4), pp. 342-346 (2011).) has been selected as Most Cited Microelectronic Engineering Articles. (Octorber, 2016)

Our original paper, in which Dr. Kurosawa is the first author, “Surface-segregated Si and Ge ultrathin films formed by Ag-induced layer exchange process” (M. Kurosawa et al., Jpn. J. Appl. Phys. 55, 08NB07 (2016).) has been selected as JJAP Spotlights. (August, 2016)

29th International Conference on Defects in Semiconductors (ICDS2017), Matsue, Japan, July 31-Aug. 4, 2017.

International Conference on Solid-State Devices and Materials (SSDM2017), Sendai, Japan, Sept. 19-22, 2017.

Advanced Metallization Conference 2017: 27th Asian Session (ADMETA2017), Tokyo, Japan, Oct. 18-20, 2017.

Nagoya Unive. Dept. Crystal. Mater. Sci.