Zaima Laboratory, Nagoya Univ.
Last update: April 15, 2011

Presentations

2011
  1. "Influence of Light Radiation on Electrical Properties of Al2O3/Ge and GeO2/Ge Gate Stacks in Nitrogen Plasma", Kusumandari, W. Takeuchi, K. Kato, M. Sakashita, O. Nakatsuka, S. Zaima, 2011 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology, Tokyo, Japan, Jan. 20-21, 2011.
  2. "Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure using Radical Nitridation Technique", K. Kato, S. Kyogoku, M. Sakashita, W. Takeuchi, H. Kondo, O. Nakatsuka, S. Zaima, 2011 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology, Tokyo, Japan, Jan. 20-21, 2011.
  3. "Characterization of Damages of Al2O3/Ge Gate Stacks Structure Induced with Light Radiation during Plasma Nitridation", Kusumandari, W. Takeuchi, K. Kato, M. Sakashita, O. Nakatsuka, S. Zaima, 3rd International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials (ISPLasma2011), p. 43, Nagoya, Japan, Mar. 6-9, 2011.
  4. "Control of Surface and Interfacial Structure by Radical Nitridation Technique for Ge MOS Transistors", K. Kato, H. Kondo, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima, The 4th International Conference on PLAsma-Nano Technology & Science, p. 43, Gifu, Japan, Mar. 10-12, 2011.

2010
  1. Invited: "Potential of Ge1-xSnx alloys as high mobility channel materials and stressors", S. Takeuchi, Y. Shimura, T. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, 5th International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 67-68, Sendai, Japan, Jan. 29-30, 2010.
  2. "Microscopic characterization of Si(011)/Si(001) direct silicon bonding substrates", T. Kato, T. Ueda, Y. Ohara, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, Y. Imai, S. Kimura, and O. Sakata, 5th International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 37-38, Sendai, Japan, Jan. 29-30, 2010.
  3. "Control of Local Strain Structures by Microfabricated Shapes of Ge/Si1-xGex Layers", K. Mochizuki, T. Mizutani, O. Nakatsuka, H. Kondo, and S. Zaima, 5th International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 41-42, Sendai, Japan, Jan. 29-30, 2010.
  4. "Strain Relaxation Behavior of Ge1-xSnx Buffer Layers on Si and Virtual Ge Substrates", Y. Shimura, S. Takeuchi, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, 5th International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 43-44, Sendai, Japan, Jan. 29-30, 2010.
  5. "Crystalline Orientation Dependence of Electrical Properties on Mn Germanide/Ge(111) and (001) Schottky Contacts", T. Nishimura, O. Nakatsuka, and S. Zaima, Materials for Advanced Metallization, Mechelen, Belgium, Mar. 7-10, 2010.
  6. Invited: "Ge1-xSnx stressors for strained-Ge CMOS",S. Takeuchi, Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, and S. Zaima, 5th International SiGe Technology Device Meeting 2010 (ISTDM2010), Stockholm, Sweden, May 24-26, 2010.
  7. "Control of Strain Relaxation Behavior of Ge1-xSnx Layers: Toward Tensile-Strained Ge Layers with Strain Value over 1%", Y. Shimura, S. Takeuchi, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, 5th International SiGe Technology Device Meeting 2010 (ISTDM2010), Stockholm, Sweden, May 24-26, 2010.
  8. "Formation of Ni(Ge1-xSnx) Layers with Solid-Phase Reaction in Ni/Ge1-xSnx/Ge Systems", T. Nishimura, Y. Shimura, S. Takeuchi, B. Vincent, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, and S. Zaima, 5th International SiGe Technology Device Meeting 2010 (ISTDM2010), Stockholm, Sweden, May 24-26, 2010.
  9. "Control of Interfacial Properties of Pr-oxide/Ge Gate Stack Structure by Introduction of Nitrogen", K. Kato, H. Kondo, M. Sakashita, O. Nakatsuka, and S. Zaima, 5th International SiGe Technology Device Meeting 2010 (ISTDM2010), Stockholm, Sweden, May 24-26, 2010.
  10. "GeSn: future applications and strategy", R. Loo, M. Caymax, B. Vincent, J. Dekoster, S. Takeuchi, O. Nakatsuka, S. Zaima, K. Temst,  and A. Vantomme, International Workshop of GeSn Developments and Future Applications, Heverlee-Leuven, Belgium, May 28, 2010. 
  11. "Epitaxial GeSn Growth using MBE", Y. Shimura, International Workshop of GeSn Developments and Future Applications, Heverlee-Leuven, Belgium, May 28, 2010.
  12. "Material Assessment for uni-axial strained Ge pMOS -1: Characterization of GeSn(B) materials", B. Vincent, Y. Shimura, S. Takeuchi, T. Nishimura, J. Demeulemeester, G. Eneman, T. Clarysse, W. Vandervorst, A. Vantomme, O. Nakatsuka, S. Zaima, J. Dekoster, M. Caymax, and R. Loo, International Workshop of GeSn Developments and Future Applications, Heverlee-Leuven, Belgium, May 28, 2010.
  13. "Material Assessment for uni-axial strained Ge pMOS-2: Formation of Ni(GeSn) Layers with Solid-Phase Reactor ", T. Nishimura, Y. Shimura, S. Takeuchi, B. Vincent, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, and S. Zaima, International Workshop of GeSn Developments and Future Applications, Heverlee-Leuven, Belgium, May 28, 2010. 
  14. "Bi-axially strained Ge grown on GeSn SRBs", O. Nakatsuka, S. Takeuchi, Y. Shimura, A. Sakai, S. Zaima, International Workshop of GeSn Developments and Future Applications, Heverlee-Leuven, Belgium, May 28, 2010.
  15. "(Si)GeSn requirements for optical device applications and solar cells", S. Takeuchi, B. Vincent, K. Temst, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, and S. Zaima, International Workshop of GeSn Developments and Future Applications, Heverlee-Leuven, Belgium, May 28, 2010.
  16. "Strained Ge and Ge1-xSnx technology for future CMOS devices ", S. Zaima, O. Nakatsuka, S. Takeuchi, Y. Shimura, A. Sakai, H. Kondo, and M. Sakashita, International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE), Tokyo, Japan, June 3-5, 2010.
  17. "Formation of Ge1-xSnx heteroepitaxial layers with high Sn content", Y. Shimura, S. Takeuchi, O. Nakatsuka, A. Sakai, and S. Zaima, International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE), Tokyo, Japan, June 3-5, 2010.
  18.  "Control of strain structure by microfabrication of Ge/Si1-xGex layers on Si(001) Substrates", K. Mochizuki, T. Mizutani, O. Nakatsuka, H. Kondo, and S. Zaima, International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE), Tokyo, Japan, June 3-5, 2010.
  19. "Dependence of electrical properties  on crystalline structures of Mn5Ge3/Ge Schottky contacts", T. Nishimura, O. Nakatsuka, S. Akimoto, and S. Zaima, International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE), Tokyo, Japan, June 3-5, 2010.
  20. "Impact of nitride interfacial layer on electrical properties of high-k/Ge stacked structures", K. Kato, H. Kondo, M. Sakashita, O. Nakatsuka, and S. Zaima, International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE), Tokyo, Japan, June 3-5, 2010.
  21. "Crystalline and electrical properties of PrAlO gate insulator films formed by atomic layer deposition", K. Furuta, W. Takeuchi, M. Sakashita, H. Kondo, O. Nakatsuka, and S. Zaima, International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE), Tokyo, Japan, June 3-5, 2010.
  22. "Nitrogen content dependence of crystalline and electrical properties of ternary transition metal gate electrodes", H. Matsushita, K. Miyamoto, K. Furumai, H. Kondo, M. Sakashita, O. Nakatsuka, and S. Zaima, International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE), Tokyo, Japan, June 3-5, 2010.
  23. "Structural change during the formation of directly bonded silicon substrates", T. Kato, T. Ueda, Y. Ohara, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, Y. Imai, S. Kimura, and O. Sakata, International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE), Tokyo, Japan, June 3-5, 2010.
  24. "Microscopic structure of directly bonded silicon substrates", T. Kato, Y. Ohara, T. Ueda, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, and S. Kimura, International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE), Tokyo, Japan, June 3-5, 2010.
  25. "Growth and Characterization of GeSn and Tensile-Strained Ge Layers for High Mobility Channels of CMOS Devices", O. Nakatsuka, Y. Shimura, S. Takeuchi, and S. Zaima, The 7th Pacific Rim International Conference on Advanced Materials and Processing, Cairns, Australia, Aug 2-6, 2010.
  26. "Effects of Al Incorporation into Pr-oxides Formed by Atomic Layer Deposition", K. Furuta, W. Takeuchi, M. Sakashita, K. Kato, H. Kondo, O. Nakatsuka, and S. Zaima, 2010 International Conference on Solid State Devices and Materials (SSDM 2010), Tokyo, Japan, Sept. 22-24, 2010.
  27. "Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy", M. Adachi, M. Sakashita, H. Kondo, W. Takeuchi, O. Nakatsuka, and S. Zaima, 2010 International Conference on Solid State Devices and Materials (SSDM 2010), Tokyo, Japan, Sept. 22-24, 2010.
  28. "Effect of Valence State of Pr on Interfacial Structure and Electrical Properties of Pr-oxide/PrON/Ge Gate Stack Structure", K. Kato, M. Sakashita, W. Takeuchi, H. Kondo, O. Nakatsuka, and S. Zaima, 2010 International Conference on Solid State Devices and Materials (SSDM 2010), Tokyo, Japan, Sept. 22-24, 2010.
  29. "Characterization of Local Strain around Through-Silicon Via Interconnects by using X-ray Microdiffraction", O. Nakatsuka, H. Kitada, Y. S. Kim, Y. Mizushima, T. Nakamura, T. Ohba, and S. Zaima, Advanced Metallization Conference 2010, Albany, USA, Oct. 5-7, 2010.
  30. Invited: "Assessment of Ge1-xSnx Alloys for Strained Ge CMOS Devices", S. Takeuchi, Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, A. Sakai, and S. Zaima, 218th ECS Meeting, Las Vegas, USA, Oct. 10-15, 2010.
  31. "Control of Strain Relaxation Behavior of Ge1-xSnx Layers for Tensile Strained Ge Layers", Y. Shimura, S. Takeuchi, O. Nakatsuka, and S. Zaima, 218th ECS Meeting, Las Vegas, USA, Oct. 10-15, 2010.
  32. "Characterization of Local Strain around Through-Silicon Via Interconnects by using X-ray Microdiffraction", O. Nakatsuka, H. Kitada, Y. S. Kim, Y. Mizushima, T. Nakamura, T. Ohba, and S. Zaima, Advanced Metallization Conference 2010: 20th Asian Session, Tokyo, Japan, Oct. 9-22, 2010.
  33. "Formation of Palladium Silicide Thin Layers on Si (110) Substrates", R. Suryana, O. Nakatsuka, and S. Zaima, Advanced Metallization Conference 2010: 20th Asian Session, Tokyo, Japan, Oct. 9-22, 2010.
  34. Invited: "Tensile-Strained Ge and Ge1-xSnx Layers for High-Mobility Channels in Future CMOS Devices", S. Zaima, O. Nakatsuka, Y. Shimura, S. Takeuchi, International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, Nov. 1- 4, 2010.
  35. "Study of Ge Surface Passivation using Radical Nitridation Technique for Ge Channel MOS Transistors", K. Kato, H. Kondo, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima, The 1st Korea-Japan Symposium on Surface Technology, Nov. 26, 2010, Incheon, Korea.
  36. "Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-devices based on Fundamental Physics of Why Silicides Exist in Nature ", T.Nakayama, K. Kakushima, O. Nakatsuka, Y. Machida, S. Sotome, T. Matsuki, K. Ohmori, H. Iwai, S. Zaima, T. Chikyow, K. Shiraishi, and K. Yamada, 2010  IEEE International Electron Devices Meeting, pp. 375-378,  San Francisco, USA,Dec. 6-8, 2010.


2009

  1. Invited: "Formation and characterization of tensile-strained Ge layers on Ge1-xSnx buffer layers", S. Zaima, O. Nakatsuka, Y. Shimura, N. Tsutsui, and A. Sakai, The 6th International Conference on Silicon Epitaxy and Heterostructures, Los Angeles, USA, May 17-22, 2009.
  2. "Low Temperature Growth of Ge1-xSnx Buffer Layers for Tensile-strained Ge Layers", Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, The 6th International Conference on Silicon Epitaxy and Heterostructures, Los Angeles, USA, May 17-22, 2009.
  3. "Analysis of Local Strain in Ge1-xSnx /Ge/Si(001) Heterostructures by X-ray Microdiffraction", O. Nakatsuka, Y. Shimura, N. Tsutsui, A. Sakai, Y. Imai, H. Tajiri, O. Sakata, S. Kimura, and S. Zaima, The 6th International Conference on Silicon Epitaxy and Heterostructures, Los Angeles, USA, May 17-22, 2009.
  4. "Effect of Atomic Deuterium Irradiation on Initial Growth of Sn and Ge1-xSnx on Ge(001) Substrates", T. Shinoda, O. Nakatsuka, and S. Zaima, The 6th International Conference on Silicon Epitaxy and Heterostructures, Los Angeles, USA, May 17-22, 2009.
  5. "Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing", T. Kato, T. Ueda, Y. Ohara, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, Y. Imai, S. Kimura, and O. Sakata, The 6th International Conference on Silicon Epitaxy and Heterostructures, Los Angeles, USA, May 17-22, 2009.
  6. "Formation Processes of Ge3N4 films by Radical Nitridation and their Electrical Properties", K. Kato, H. Kondo, and S. Zaima, The 6th International Conference on Silicon Epitaxy and Heterostructures, Los Angeles, USA, May 17-22, 2009.
  7. Invited: "Study on Gate Stacks in Future Nano-Scaled CMOS using Hard X-Ray Photoelectron Spectroscopy", S. Zaima, O. Nakatsuka, T. Hattori, International Workshop for New Opportunities in Hard X-ray Photoelectron Spectroscopy (HAXPES 2009), New York, USA, May 20-22, 2009.
  8. "Influence of Interfacial Structure on Electrical Properties of Metal/Ge Schottky Contacts", O. Nakatsuka, S. Akimoto, T. Nishimura and S. Zaima, The 9th International Workshop on Junction Technology (IWJT2009), pp. 40-41, Kyoto, Japan, June 11-12, 2009.
  9. "Formation of Pr Oxide Films by Atomic Layer Deposition using Pr(EtCp)3 Precursor", H. Kondo, H. Matsui, K. Furuta, M. Sakashita, and S. Zaima, 2009 International Conference on Solid State Devices and Materials (SSDM), Sendai, Japan, Oct. 7-9, 2009.
  10. "Crystalline Structures and Electrical Properties of High Nitrogen-content Hf-Si-N Films", K. Miyamoto, H. Kondo, and S. Zaima, 2009 International Conference on Solid State Devices and Materials (SSDM), Sendai, Japan, Oct. 7-9, 2009.
  11. "Mobility Behavior in Ge1-xSnx Layers Grown on SOI Substrates", N. Tsutsui, Y. Shimura, O. Nakatsuka, A. Sakai, and S. Zaima, 2009 International Conference on Solid State Devices and Materials (SSDM), Sendai, Japan, Oct. 7-9, 2009.
  12. Invited: " Formation of GeSn Buffer Layers for High-Speed Strained-Ge Channel MOSFETs", S. Zaima, The 1st International Workshop on Si based nano-electronics and -photonics, Vigo, Spain, Sept. 20-23, 2009.
  13. Invited: "Contact Technology for Nano-Scaled CMOS", S. Zaima, Advanced Metallization Conference 2009 (ADMETA): 19th Asian Session, p. 100, Tokyo, Japan, Oct. 20-21, 2009.
  14. " Formation of Palladium Silicide on Heavily Doped Si (001) Substrates Using Ti Intermediate Layer", R. Suryana, O. Nakatsuka, and S. Zaima, Advanced Metallization Conference 2009 (ADMETA): 19th Asian Session, pp. 58-59, Tokyo, Japan, Oct. 20-21, 2009.

2008
  1. "Development of high-density radical source for radical nitridation process in ULSI technology development of high-density radical source for radical nitridation process in ULSI technology", H. Kondo, S. Oda, S. Takashima, A. Sakai, M. Ogawa, S. Zaima, M. Hori, S. Den, and H. Kano, The International Conference on Plasma-NanoTechnology and Science, Nagoya, Japan, Mar. 13-14, 2008.
  2. "Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates", E. Toyoda, A. Sakai, O. Nakatsuka, S. Zaima, M. Ogawa, H. Isogai, T. Senda, K. Izunome, and K. Omote, The fourth International SiGe Technology and Device Meeting (ISTDM), pp. 139-140, HsinChu, Taiwan, May 11-14, 2008.
  3. "Effect of Hydrogen on Initial Growth of Sn and Ge1-xSnx on Ge(001) substrates", M. Yamazaki, O. Nakatsuka, T. Shinoda, A. Sakai, M. Ogawa, and S. Zaima, The fourth International SiGe Technology and Device Meeting (ISTDM), HsinChu, Taiwan, May 11-14, 2008.
  4. "Novel Method to Introduce Uniaxial Tensile Strain in Ge by Microfabrication of Ge/Si1-xGex Structures on Si(001) Substrates", T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, M. Ogawa, and S. Zaima, The fourth International SiGe Technology and Device Meeting (ISTDM), pp. 149-150, HsinChu, Taiwan, May 11-14, 2008.
  5. "Microstructures in Directly Bonded Si Substrates", A. Sakai, Y. Ohara, T. Ueda, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, The fourth International SiGe Technology and Device Meeting (ISTDM), pp. 153-154, HsinChu, Taiwan, May 11-14, 2008.
  6. "Thermal Stability and Scalability of Mictamict Ti-Si-N MOS Gate Electrodes", H. Kondo, K. Furumai, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, 2008 International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, Sept. 24-26, 2008.
  7. "Metalorganic Chemical Vapor Deposition of High-Dielectric-Constant Praseodymium Oxide Films using a Liquid Cyclopentadienyl Precursor", H. Kondo, S. Sakurai, A. Sakai, M. Ogawa and S. Zaima 2008 International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, Sept. 24-26, 2008.
  8. "Control of Sn Precipitation and Strain relaxation in Compositionally Step-graded Ge1-xSnx Buffer Layers for Tensile-strained Ge Layers", Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, 2008 International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, Sept. 24-26, 2008.
  9. "Analysis of Uniaxial Tensile Strain in Microfabricated Ge/Si1-x Gex Structures on Si(001) Substrates", T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, and S. Zaima, 4th International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 19-20 Sendai, Japan, Sept. 25-27, 2008.
  10. "Formation and Characterization of Compositionally Step-graded Ge1-x Snx Buffer Layers for Tensile-strained Ge Layers", Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, 4th International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 27-28, Sendai, Japan, Sept. 25-27, 2008.
  11. "Formation of Tensile-Strained Ge Layers on Ge1-xSnx Buffer Layers and Control of Strain and Dislocation Structures", O. Nakatsuka, Y. Shimura, A. Sakai, and S. Zaima, 4th International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 63-64, Sendai, Japan, Sept. 25-27, 2008.
  12. "Crystalline and Electrical Properties of Thin Pd Silicide Layer/Si Contacts", R. Suryana, S. Akimoto, O. Nakatsuka and S. Zaima, Advanced Metallization Conference 2008 (ADMETA): 18th Asian Session, Tokyo, Japan, Oct. 8-10, 2008.
  13. "Nitrogen Content Dependence of Resistivity and Crystalline Structures of Ti-Si-N and Hf-Si-N Gate Electrodes", K. Miyamoto, K. Furumai, B.E. Urban, H. Kondo, and S. Zaima, The 2008 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF), pp. 43-44,　Tokyo, Japan, Nov. 5-7, 2008.
  14. "Effects of ALD-Al2O3 Interface Layers on Interfacial Properties of Ge MOS Capacitors", R. Kato, S. Kyogoku, M. Sakashita, H. Kondo, and S. Zaima, The 2008 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF), pp. 105-106, Tokyo, Japan, Nov. 5-7, 2008.
  15. "Characterization and analyses of interface structures in directly bonded Si(011)/Si(001) substrates", E. Toyoda, A. Sakai, O. Nakatsuka, H. Isogai, T. Senda, K. Izunome, K. Omote, and S. Zaima, The 5th International Symposium on Advanced Science and Technology of Silicon Materials, Hawaii, USA, Nov. 10-14, 2008.
  16. "Formation of Uniaxial Tensile-strained Ge by using Micro-patterning of Ge/Si1-xGex/Si Structures", T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, and S. Zaima, The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008), Nagoya, Japan, Dec. 9-13, 2008.
  17. "Formation and Characterization of Tensile-strained Ge layers on Ge1-xSnx Buffer Layers", Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008), Nagoya, Japan, Dec. 9-13, 2008.
  18. "Strain and interfacial defects in directly bonded Si substrates", Y. Ohara, T. Ueda, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, H. Tajiri, O. Sakata and S. Kimura, The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008), Nagoya, Japan, Dec. 9-13, 2008.
  19. "Atomistic analysis of directly bonded Si substrate interface", T. Ueda, Y. Ohara, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, T. Sakata, and H. Mori, The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008), Nagoya, Japan, Dec. 9-13, 2008.

2007
  1. Invited: "Strain and dislocations in group IV semiconductor heterostructures", A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima, Materials Research Society 2007 Spring Meeting, San Francisco, USA, Apr. 9-13, 2007.
  2. "Characterization of bonding structures of directly bonded hybrid crystal orientation substrates", E. Toyoda, A. Sakai, H. Isogai, T. Senda, K. Izunome, O. Nakatsuka, M. Ogawa, and S. Zaima, 5th International Conference on Silicon Epitaxy and Heterostructures, pp. 337-338, Marseille, France, May 20-25, 2007.
  3. "Formation of high-density Si nanodots by agglomeration of ultra-thin amorphous Si films", H. Kondo, T. Ueyama, E. Ikenaga, K. Kobayashi, A. Sakai, M. Ogawa, and S. Zaima, 5th International Conference on Silicon Epitaxy and Heterostructures, pp. 305-306, Marseille, France, May 20-25, 2007.
  4. Invited: "Silicide and germanide technology for contacts and gates in MOSFET applications", S. Zaima, 5th International Conference on Silicon Epitaxy and Heterostructures, pp. 71-72, Marseille, France, May 20-25, 2007.
  5. "Tensile strained Ge layers on strain-relaxed Ge1-xSnx/virtual Ge substrates", S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima, 5th International Conference on Silicon Epitaxy and Heterostructures, pp. 36-37, Marseille, France, May 20-25, 2007.
  6. "Impact of Pt Incorporation on Thermal Stability of NiGe Layers on Ge(001) Substrates", O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, and S. Zaima, 7th International Workshop on Junction Technology 2007, pp. 87-88, Kyoto, Japan, June 8-9, 2007.
  7. "Development of new high-density radical sources and its application to radical nitridation of Ge surfaces", H. Kondo, S. Oda, S. Takashima, A. Sakai, M. Ogawa, S. Zaima, M. Hori, S. Den, H. Kano, The 20th Symposium on Plasma Science for Materials, p. 128, Nagoya, Japan, June 21-22, 2007.
  8. "Pr-Oxide-Based Dielectric Films on Ge Substrates",  M. Sakashita, N. Kito, A. Sakai, H. Kondo, O. Nakatsuka, M. Ogawa and S. Zaima, 2007 International Conference on Solid State Devices and Materials, Tsukuba, Japan, Sept. 18-21, 2007.
  9. "Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors", K. Furumai, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa and S. Zaima, 2007 International Conference on Solid State Devices and Materials, Tsukuba, Japan, Sept. 18-21, 2007.
  10. "Surface Treatment of Ge(001) Surface by Radical Nitridation", H. Kondo, M. Fujita, A. Sakai, M. Ogawa and S. Zaima, 2007 International Conference on Solid State Devices and Materials, Tsukuba, Japan, Sept. 18-21, 2007.
  11. "Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi2/Si Schottky Contacts Formed from Ni/Ti/Si System", O. Nakatsuka, A. Suzuki, S. Akimoto, A. Sakai, M. Ogawa and S. Zaima, 2007 International Conference on Solid State Devices and Materials, Tsukuba, Japan, Sept. 18-21, 2007.
  12. Invited: "Silicide and Germanide Technology for Contacts and Metal Gates in MOSFET Applications", S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, and M. Ogawa, 212th Electrochemical Society Meeting, Washington D.C., USA, Oct. 7-12, 2007.
  13. "Contact Propeties of Epitaxial NiSi2/Heavily Doped Si Structures Formed from Ni/Ti/Si Systems", S. Akimoto, O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, and S. Zaima, Advanced Metallization Conference 2007: 17th Asian Session, pp. 90-91, Tokyo, Japan, Oct. 23-24, 2007.
  14. "Structural and Electrical Properties of Metal-germanide MOS Gate Electrodes", H. Kondo, D. Ikeno, Y. Kaneko, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, The Sixth Pacific Rim Inernational Conference on Advanced Materials and Processing, p. 26, Jeju, Korea, Nov. 5-9, 2007.
  15. "Electrical and Crystalline Properties of Epitaxial NiSi2/Si Contacts Fromed in Ni/Ti/Si(001) Systems", O. Nakatsuka, A. Suzuki, S. Akimoto, A. Sakai, M. Ogawa, and S. Zaima, The Sixth Pacific Rim Inernational Conference on Advanced Materials and Processing, p. 72, Jeju, Korea, Nov. 5-9, 2007.
  16. "Tensile Strained Ge Layers Grown on Compositionally Step-Graded Ge1-xSnx Buffer Layers", Y. Shimura, S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima, The 3nd international workshop on new group IV semiconductor nanoelectronics, pp. 29-30, Sendai, Japan, Nov. 8-9, 2007.
  17. Invited: "Growth and Characterization of Tensile-Strained Ge Layers on Strain Relaxed Ge1-xSnx Buffer Layers", O. Nakatsuka, S. Takeuchi, A. Sakai, M. Ogawa, and S. Zaima, The 3nd international workshop on new group IV semiconductor nanoelectronics, pp. 75-76, Sendai, Japan, Nov. 8-9, 2007.
  18. Invited: "Defect Control for Ge/Si and  Ge1-xSnx/Ge/Si Heterostructures", A. Sakai, S. Takeuchi, O. Nakatsuka, M. Ogawa, and S. Zaima, Fifth International Symposium on Control of Semiconductor Interfaces, pp. 31-32, Tokyo, Japan, , Nov. 12-14, 2007.
  19. "Characterization of Local Strains in Si1-xGex Hetero-mesa Structures on Si(001) Substrates by Using X-ray Microdiffraction", O. Nakatsuka, K. Yukawa, S. Mochizuki, A. Sakai, K. Fukuda, S. Kimura, O. Sakata, K. Izunome, T. Senda, E. Toyoda, M. Ogawa, and S. Zaima, Fifth International Symposium on Control of Semiconductor Interfaces, pp. 41-42, Tokyo, Japan, Nov. 12-14, 2007.
  20. "Scanning Tunneling Microscopy Observation of Initial Growth of Sn and Ge1-xSnx Layers on Ge(001) Substrates", M. Yamazaki, S. Takeuchi, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima, Fifth International Symposium on Control of Semiconductor Interfaces, pp. 85-86, Tokyo, Japan, Nov. 12-14, 2007.
  21. "Effect of alcohol sources on synthesis of single-walled carbon nanotubes", S. Oida, A. Sakai, O. Nakatuska, M. Ogawa, and S. Zaima,  9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, Tokyo, Japan, Nov. 11-15, 2007.
  22. "Formation of high-density Si nanodots and characterization of chemical bonding states by soft-X-ray photoelectron spectroscopy", H. Kondo, 9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, Tokyo, Japan, Nov. 11-15, 2007.
  23. Invited: "Controlling Interface Properties of Silicide/Si Contacts for Si ULSI Applications", S. Zaima, O. Nakatsuka, A. Sakai, and M. Ogawa, 9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, Tokyo, Japan, Nov. 11-15, 2007.
2006
  1. "Electrical properties of epitaxial NiSi2/Si contacts with extremely flat interface formed in Ni/Ti/Si(001) system", O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, and S. Zaima, Materials for Advanced Metallization Conference 2006, pp. 177-178, Grenoble, Frence, Mar. 5-8, 2006.
  2. "Systematic Characterization of Ni Full Silicide in Sub-100 nm Gate Regions", D. Ito, A. Sakai, O. Nakatsuka, H. Kondo, Y. Akasaka, M. Ogawa, and S. Zaima, 2006 MRS Spring Meeting, San Francisco, USA, Apr. 17-21, 2006.
  3. Invited: "Control and characterization of strain in SiGe/Si heterostructures with engineered misfit dislocations", A. Sakai, N. Taoka, S. Mochizuki, K. Yukawa, O. Nakatsuka, S. Takeda, S. Kimura, M. Ogawa, and S. Zaima, The third International SiGe Technology and Device Meeting, pp. 232-233, Princeton, USA, May 15-17, 2006.
  4. "Strain relaxation of patterned Ge and SiGe structures on Si(001) substrates", S. Mochizuki, A. Sakai, O. Nakatsuka, H. Kondo, K. Yukawa, K. Izunome, T. Senda, E. Toyoda, M. Ogawa, and S. Zaima, The third International SiGe Technology and Device Meeting, pp. 258-259, Princeton, USA, May 15-17, 2006.
  5. "Growth and structure evaluation of strain-relaxed Ge1-xSnx buffer layers on virtual Ge(001) substrates", S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, and S. Zaima, The third International SiGe Technology and Device Meeting, pp. 98-99, Princeton, USA, May 15-17, 2006.
  6. Invited: "Nano-scale Observations for Local Current Leakage in High-k Gate Dielectrics Using Conductive-Atomic Force Microscopy",  S. Zaima, A. Seko, T. Sago, M. Sakashita, A. Sakai, and M. Ogawa, The E-MRS 2006 Spring Meeting (E-MRS - IUMRS - ICEM 06), Nice, France, May 29-June 2, 2006.
  7. Keynote Lecture: "Silicides and Related-Materials for ULSI Applications",  S. Zaima, A. Sakai, and M. Ogawa, Asia-Pacific Conference on Semiconducting Silicides: Science and Technology Towards Substainable Optoelectronics, pp. 1-2, Kyoto, Japan, July 29-31, 2006.
  8. Invited lecture: "Nano-scale Observations for degradation phenomena in High-k gate dielectrics using conductive-atomic force microscopy", S. Zaima, A. Seko, M. Sakashita, A. Sakai and M. Ogawa, The IUMRS International Conference in Asia 2006 , Sept. 10-14, 2006, Jeju, Korea.
  9. "Behavior of Local Charge Trapping Sites in La2O3-Al2O3 Comosite Films under Constant Voltage Stress", T. Sago, A. Seko, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, 2006 International Conference on Solid State Devices and Materials, pp. 418-419, Sept. 12-15, 2006, Yokohama, Japan.
  10. "Comparison Dependence of Work Function in Metal (Ni, Pt)-Germanide Gate Electrodes", D. Ikeno, K. Furumai, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, 2006 International Conference on Solid State Devices and Materials, pp. 442-443, Sept. 12-15, 2006, Yokohama, Japan.
  11. Invited: "Hard X-ray Photoelectron Spectroscopy Study on Buried Interfaces in Next Generation CMOS Devices", T. Hattori and S. Zaima, The 2nd International Workshop on Hard X-ray Photoelectron Spectroscopy, p. 20, Sept. 19-20, 2006, Hyogo, Japan.
  12. "Interfacial Structure of HfON/SiN/Si Gate Stacks", O. Nakatsuka, M. Sakashita, H. Kondo, E. Ikenaga, M. Kobata, J.-J. Kim, H. Nohira, T. Hattori, A. Sakai, M. Ogawa, S. Zaima, The 2nd International Workshop on Hard X-ray Photoelectron Spectroscopy, p. 102, Sept. 19-20, 2006, Hyogo, Japan.
  13. "Dislocation Structure and Strain Relaxation of SiGe and Ge Sub-micron Stripe Lines on Si(001) Substrates", O. Nakatsuka, S. Mochizuki, A. Sakai, H. Kondo, K. Yukawa, M. Ogawa, and S. Zaima, The 2nd International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 69-70, Oct. 2-3, 2006, Sendai, Japan.
  14. "Mosaicity and Dislocations in Strain-Relaxed SiGe Buffer Layers on SOI Substrates", O. Nakatsuka, N. Taoka, A. Sakai, S. Mochizuki, M. Ogawa, and S. Zaima, The 2nd International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 71-72, Oct. 2-3, 2006, Sendai, Japan.
  15. Invited: "Buffer layer technology with misfit dislocation engineering", A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima, The 2nd International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 81-82, Oct. 2-3, 2006, Sendai, Japan.
  16. "Control of Strain and Dislication Structures in Ge1-xSnx buffer layers on virtual Ge substrates", S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, and S. Zaima, The 2nd International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 91-92, Oct. 2-3, 2006, Sendai, Japan.
  17. Invited: "Ni-Silicide/Si and SiGe(C) Contact Technology for ULSI Applications", O. Nakastuka, S. Zaima, A. Sakai, and M. Ogawa, The 14th annual IEEE International Conference on Advanced Thermal Processing of Semiconductors, pp. 31-37, Oct. 10-13, 2006, Kyoto, Japan.
  18. "Electrical Properties and Bonding Structures of Germanium Nitride/Ge(100) Structures Formed by Radical Nitridation", H. Kondo, I. Yanagi, M. Sakashita (Graduate School of Engineering, Nagoya university), A. Sakai, M. Ogawa, and S. Zaima, 210th Meeting of The Electrochemical Society, Oct. 29-Nov. 3, 2006, Cancun, Mexico.
  19. "Scanning Tunneling Microscopy Study on the Reaction of Oxygen with Clean Ge(001) Surfaces", A. Sakai, Y. Wakazono, O. Nakatsuka, S. Zaima, and M. Ogawa, 210th Meeting of The Electrochemical Society, Oct. 29-Nov. 3, 2006, Cancun, Mexico.
  20. "Evaluation of Trapped Charge Distributions in Stressed Gate SiO2 Films using Conductive Atomic Force Microscopy", A. Seko, Y. Watanabe, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, The 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology, pp. 23-24, Nov. 8-10, 2006, Kanagawa, Japan.

2005
  1. "Transmission electron microscopy analysis of dislocation structures in the strain-relaxed SiGe films on Si and silicon-on-insulator substrates", N. Taoka, A. Sakai, S. Mochizuki, O. Nakatsuka, M. Ogawa, S. Zaima, and Y. Yasuda, International Symposium on Characterization of Real Materials and Real Processing by Transmission Electron Microscopy, Nagoya, Japan, Jan. 26-27, 2005.
  2. "Improvement on NiSi/Si contact properties with C-implantation", S. Zaima, O. Nakatsuka, K. Okubo, A. Sakai, M. Ogawa, and Y. Yasuda, Materials for Advanced Metallization Conference 2005, pp. 143-144, Dresden, Germany, Mar. 6-9, 2005.
  3. Plenary lecture:"Nitrogen radical surface reactions and advanced ULSI device processing", S. Zaima, Korea-Japan Workshop on Advanced Plasma Processing and Diagnostics, Busan, Korea, Apr. 22-23, 2005.
  4. "Control of Misfit Dislocations in Strain-Relaxed SiGe Buffer Layers on SOI Substrates", N. Taoka, A. Sakai, S. Mochizuki, O. Nakatsuka, M. Ogawa, and S. Zaima, Fourth International Conference on Silicon Epitaxy and Heterostructures, pp. 120-121, Awaji Island, Japan, May 23-26, 2005.
  5. "Local Strain in SiGe/Si Heterostructures Analyzed by X-Ray Microdiffraction", S. Mochizuki, A. Sakai, N. Taoka, O. Nakatsuka, S. Takeda, S. Kimura, M. Ogawa, and S. Zaima, Fourth International Conference on Silicon Epitaxy and Heterostructures, pp. 124-125, Awaji Island, Japan, May 23-26, 2005.
  6. "Hard X-Ray Photoelectron Spectroscopy for HfON/SiN/Si System", O. Nakatsuka, R. Takahishi, M. Sakashita, E. Ikenaga, K. Kobayashi, H. Nohira, T. Hattori, A. Sakai, M. Ogawa, and S. Zaima, Fourth International Conference on Silicon Epitaxy and Heterostructures, pp. 270-271, Awaji Island, Japan, May 23-26, 2005.
  7. "Surface structures in the initial growth of epitaxial Si1-x-yGexCy layers in SiGe and C alternate deposition", S. Takeuchi, O. Nakatsuka, Y. Wakazono, A. Sakai, M. Ogawa, Y. Yasuda, and S. Zaima, First International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 33-34, Sendai, Japan, May 27-28, 2005.
  8. "Control of Solid-Phase Reaction and Electrical Properties of Ni silicide/Si Contacts by Ge and C Incorporation", O. Nakatsuka, K. Okubo, A. Sakai, J. Murota, Y. Yasuda, M. Ogawa, and S. Zaima, First International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 35-36, Sendai, Japan, May 27-28, 2005.
  9. "Impact of C implantation on electrical properties of NiSi/Si contact", O. Nakatsuka, K. Okubo, A. Sakai, M. Ogawa, and S. Zaima, The 5th International Workshop on Junction Technology, pp. 91-92, Osaka, Japan, June 7-8, 2005.
  10. Invited: "Nanoscale Observations for Degradation Phenomena in SiO2 and High-k Gate Insulators Using Conductive-Atomic Force Microscopy", S. Zaima, A. Seko, Y. Watanabe, T. Sago, M. Sakashita, H. Kondo, A. Sakai, and M. Ogawa, 2005 International Conference on Solid State Devices and Materials, pp. 236-237, Sept. 12-15, 2005, Kobe, Japan.
  11. "Local Current Leakage Characterization in La2O3-Al2O3 Composite Films by Conductive Atomic Force Microscopy", A. Seko, T. Sago, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, 2005 International Conference on Solid State Devices and Materials, pp. 246-247, Sept. 12-15, 2005, Kobe, Japan.
  12. "Film structures and electrical properties of Pr silicate formed by pulsed laser deposition", K. Ariyoshi, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, 2005 International Conference on Solid State Devices and Materials, pp. 256-257, Sept. 12-15, 2005, Kobe, Japan.
  13. Invited: "Dislocation and strain engineering for SiGe buffer layers on Si", A. Sakai, S. Mochizuki, N. Taoka, O. Nakatsuka, S. Takeda, S. Kimura, M. Ogawa, and S. Zaima, Symposium on Crystalline Defects and Contamination: Their Impact and Control in Device Manufacturing IV (joint with 35th European Solid State Device Research Conference), Grenoble, Frence, Sept. 15-16, 2005.
  14. "Epitaxial NiSi2 layers with extremely flat interfaces in Ni/Ti/Si(001) system", A. Suzuki, K. Okubo, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima, Advanced Metallization Conference 2005: 15th Asian Session, Tokyo, Japan, Oct. 13-14, 2005.

2004
  1. "Growth mechanism of epitaxial NiSi2 layer in the Ni/Ti/Si(001) contact for atomically flat interfaces", O. Nakatsuka, K. Okubo, A. Sakai, S. Zaima, and Y. Yasuda, in Abstr. of The 4th International Workshop on Junction Technology, Shanghai, China, Mar. 15-16, 2004.
  2. Invited:"Current Status and Future Prospects of Si-ULSI Technology", S. Zaima, The 1st Workshop for Joint Program Japan-US Research Collaboration for Synchrotron Radiation Nanomaterials Science, Tokyo, Japan, Mar. 16-17, 2004.
  3. "Initial growth behaviors of SiGeC in SiGe and C alternative deposition", S. Takeuchi, O. Nakatsuka, Y. Wakazono, A. Sakai, S. Zaima, and Y. Yasuda, Second International SiGe Technology and Device Meeting, pp. 192-193, Frankfurt (Oder), Germany, 16-19 May, 2004.
  4. "Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations", N. Taoka, A. Sakai, T. Egawa, O. Nakatsuka, S. Zaima, and Y. Yasuda, Second International SiGe Technology and Device Meeting, pp. 43-44, Frankfurt (Oder), Germany, May 16-19, 2004.
  5. "Thickness Dependence of Microscopic Current-Voltage Characteristics in Stressed SiO2 Films", Y. Watanabe, A. Seko, H. Kondo, A. Sakai, S. Zaima, and Y. Yasuda, 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices, Tokyo, Japan, 26-28 May, 2004.
  6. "HfO2 Dielectric Film Formation Combined with Radical Nitridation",M. Sakashita, R. Takahashi, A. Sakai, S. Zaima, and Y. Yasuda, 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices, Tokyo, Japan, May 26-28, 2004.
  7. "Analysis of Breakdown Phenomena in Stressed Gate SiO2 Films by Conductive Atomic Force Microscopy", A. Seko, Y. Watanabe, H. Kondo, A. Sakai, S. Zaima, and Y. Yasuda, 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices, Tokyo, Japan, 26-28 May, 2004.
  8. "Growth Process and Energy Bandgap Formation of Silicon Nitride Films in Radical Nitridation Process", H. Kondo, K. Kawaai, A. Sakai, K. Miyazaki, S. Zaima, and Y. Yasuda, 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices, Tokyo, Japan, 26-28 May, 2004.
  9. Invited:"Growth of strain-relaxed SiGe buffer layers on Si(001) substrates with controlled generation and propagation of dislocations", A. Sakai, S. Zaima, and Y. Yasuda, Materials Research Society 2004 Spring Meeting, San Francisco, USA, April 12-16, 2004.
  10. Invited: "Nanoscale analysis of degradation phenomena in MOS gate insulators using conductive atomic force microscopy", S. Zaima, H. Kondo, M. Sakashita, A. Sakai, and Y. Yasuda, The 12th International Conference on Solid Films and Surfaces, p. 8, Hamamatsu, Japan, 21-25 Jun., 2004.
  11. "Thermal Stability and Electrical Properties of (La2O3)1-x(Al2O3)x Composite Films", R. Fujitsuka, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda, 2004 International Conference on Solid State Device and Materials, pp. 528-529, Tokyo, Japan, 15-17 Sep., 2004.
  12. "Growth and Dislocation Control of Strain-relaxed SiGe Buffer Layers on Si(100) Substrates", Y. Yasuda, The Seventh China-Japan Symposium on Thin Films, pp. 33-36, Chengdu, China, 20-22 Sep., 2004.
  13. "Nickel Silicide Technology for Low Resistivity Contacts in ULSI Devices", S. Zaima, O. Nakatsuka, A. Sakai, and Y. Yasuda, The Seventh China-Japan Symposium on Thin Films, pp. 151-154, Chengdu, China, 20-22 Sep., 2004.
  14. "Thermal stability and electrical properties of Ni-silicide on C-incorporation", O. Nakatsuka, K. Okubo, A. Sakai, M. Ogawa, S. Zaima, J. Murota, and Y. Yasuda, Advanced Metallization Conference 2004: Asian Session, pp. 18-19, Tokyo, Japan, 28-29 Sep., 2004.
  15. Invited: "Group-IV Semiconductor Materials Engineering for Advanced Device Technology", Y. Yasuda, A. Sakai, O. Nakatsuka, and S. Zaima, 2004 Joint International Meeting: 206 th Meeting of The Electrochemical Society (ECS) and 2004 Fall Meeting of The Electrochemical Society of Japan (ECSJ), Honolulu, USA, 3-8 Oct., 2004.
  16. "Preparation and Evaluation of NiGe Gate Electrodes for Metal-Oxide-Semiconductor Devices", Y. Kaneko, H. Kondo, A. Sakai, S. Zaima, and Y. Yasuda, 2004 Joint International Meeting: 206 th Meeting of The Electrochemical Society (ECS) and 2004 Fall Meeting of The Electrochemical Society of Japan (ECSJ), Honolulu, USA, Oct. 3-8, 2004.
  17. "Improvement in the Ni silicide/Si contact properties by C implantation", K. Okubo, O. Nakatsuka, A. Sakai, M. Ogawa, S. Zaima, J. Murota and Y. Yasuda, Third International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Application to Ultrahigh Speed and Opto-Electronic Devices, pp. 43-44, Sendai, Japan, Oct. 12-13, 2004.
  18. "Control of initial growth of epitaxial NiSi2 on Si(001) with C incorporation", O. Nakatsuka, E. Okada, D. Ito, A. Sakai, S.Zaima, M. Ogawa, and Y. Yasuda, Third International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Application to Ultrahigh Speed and Opto-Electronic Devices, pp. 41-42, Sendai, Japan, Oct. 12-13, 2004.
  19. "Analysis of microstructures in strain-relaxed SiGe buffer layers on SOI substrates with pure-edge dislocation networks", N. Taoka, A. Sakai, S. Mochizuki, O. Nakatsuka, S. Zaima, M. Ogawa, Y. Yasuda, T. Tezuka, N. Sugiyama, and S. Takagi, Third International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Application to Ultrahigh Speed and Opto-Electronic Devices, pp. 39-40, Sendai, Japan, Oct. 12-13, 2004.
  20. "Anisotropic strain-relaxation mechanism in SiGe/Si(001) heterostructures with 60deg. misfit dislocations", S. Mochizuki, T. Egawa, A. Sakai, N. Taoka, O. Nakatsuka, M. Ogawa, S. Zaima, and Y. Yasuda, Third International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Application to Ultrahigh Speed and Opto-Electronic Devices, pp. 35-36, Sendai, Japan, Oct. 12-13, 2004.
  21. "Evolution of surface morphology in the initial growth of Si1-x-yGexCy layers", S. Takeuchi, O. Nakatsuka, Y. Wakazono, A. Sakai, M. Ogawa, S. Zaima, and Y. Yasuda, Third International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Application to Ultrahigh Speed and Opto-Electronic Devices, pp. 33-34, Sendai, Japan, Oct. 12-13, 2004.
  22. "Scanning tunneling microscopy observation of C adsorption behavior in the initial growth of SiGeC on Si(001)", Y. Wakazono, S. Takeuchi, O. Nakatsuka, A. Sakai, S. Zaima, M. Ogawa, and Y. Yasuda, Third International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Application to Ultrahigh Speed and Opto-Electronic Devices, pp. 31-32,Sendai, Japan, Oct. 12-13, 2004.
  23. "Fabrication and evaluation of floating gate memories with surface-nitrided Si nanocrystals", S. Naito, T. Ueyama, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, 2004 International Microprocesses and Nanotechnology Conference, pp. 170-171, Osaka, Japan, Oct. 26-29, 2004.
  24. Invited:"Control of Ni/Si interfacial reaction and NiSi technology for ULSI applications", S. Zaima, O. Nakatsuka, A. Sakai, and Y. Yasuda, The International Union of Material Research Society- International Conference in Asian 2004, p. 205, Hsinchu, Taiwan, Nov. 16-18, 2004.
  25. "Dislocation engineering for high-quality SiGe epitaxial films on Si substrates", A. Sakai, S. Zaima, and Y. Yasuda, The 4th International Symposium on Advanced Science and Technology of Silicon Materials, pp. 245-250, Hawaii, USA, Nov. 24-26, 2004.
  26. "Dislocation and strain distribution analysis for SiGe buffer layers formed on silicon on insulator substrates", N. Taoka, A. Sakai, S. Mochizuki, O. Nakatsuka, S. Zaima, Y. Yasuda, M.Ogawa, T. Tezuka, N. Sugiyama, and S. Takagi, 2004 Materials Research Society Fall Meeting, Boston, USA, Nov. 29-Dec. 3, 2004.

2003
  1. Invited:"Interfacial reaction and electrical properties in Ni/Si and Ni/SiGe contacts", S. Zaima, O. Nakatsuka, A. Sakai, J. Murota, and Y. Yasuda, First International SiGe Technology and Device Meeting, pp. 107-108, Nagoya, Japan, Jan. 15-17, 2003.
  2. "Strain-relaxation mechanisms of SiGe layers formed by two-step growth on Si(100)", T. Egawa, T. Yamamoto, N. Taoka, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda, First International SiGe Technology and Device Meeting, pp. 135-136, Nagoya, Japan, Jan. 15-17, 2003.
  3. "Dislocation structures and strain-relaxation in SiGe buffer layers on Si (001) with thin Ge interlayer", T. Yamamoto, T. Egawa, N. Taoka, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda, First International SiGe Technology and Device Meeting, pp. 137-138, Nagoya, Japan, Jan. 15-17, 2003.
  4. "Influence of SiGe interlayer on the initial growth of Si1-x-yGexCy on Si(100)", S. Ariyoshi, S. Takeuchi, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda, First International SiGe Technology and Device Meeting, pp. 141-142, Nagoya, Japan, Jan.15-17, 2003.
  5. "Solid phase growth of nickel silicide for low resistance contacts in Si and SiGe(C) devices", S. Zaima, Y. Tsuchiya, K. Okubo, O. Nakatsuka, A. Sakai, J. Murota, and Y. Yasuda, 3rd International SiGe(C) Epitaxy and Heterostructures Conference, pp. 74-75, Santa Fe, USA, Mar. 9-12, 2003.
  6. Invited:"Atomistic Characterization of Radical Nitridation Process on Si(100) Surfaces", Y. Yasuda, A. Sakai, and S. Zaima, in Abstr. of Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, Paris, France, Apr. 28-May. 2, 2003.
  7. J. Yamasaki, N. Tanaka, O.Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda, "HRTEM and EELS Analysis of Interfacial Reactions in Ti/Si1-xGex/Si(100)", Microscopy and Microanalysis 2003, pp. 470-471, San Antonio, USA, Aug. 3-7, 2003.
  8. "Conductive Atomic Force Microscopy Analysis for Local Electrical Characteristics in Stressed SiO2 Gate Films", Y. Watanabe, A. Seko, H. Kondo, A. Sakai, S. Zaima, and Y. Yasuda, in Ext. Abstr. of 2003 International Conference on Solid State Device and Materials, pp. 72-73, Tokyo, Japan, Sep. 16-18, 2003.
  9. "HRTEM and EELS Analyses of Interfacial Nanostructures in Ti/Si1-xGex/Si(100)", J. YaM., N. Tanaka, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda, in Ext. Abstr. of 2003 International Conference on Solid State Device and Materials, pp. 86-87, Tokyo, Japan, Sep. 16-18, 2003.
  10. "Influence of structural variation of Ni silicide thin films on electrical property for contact materials", K. Okubo, Y. Tsuchiya, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda, in Ext. Abstr. of 2003 International Conference on Solid State Device and Materials, pp. 502-503, Tokyo, Japan, Sep. 16-18, 2003.
  11. "Chemical Structure of HfO2/Si Interfacial Transition Layer", M. Suzuki, K. Kimura, Y. Sugita, O. Nakatsuka, A. Sakai, S. Zaima, T. Ishikawa, S. Shin, and T. Hattori, in Ext. Abstr. of 2003 International Conference on Solid State Device and Materials, pp. 818-819, Tokyo, Japan, Sep. 16-18, 2003.
  12. "Low temperature formation of epitaxial NiSi2 in Ni/Ti/Si(100) system", O. Nakatsuka, K. Okubo, Y. Tsuchiya, A. Sakai, S. Zaima, and Y. Yasuda, in Abstr. of Advanced Metallization Conference: Asian Session, pp. 72-73, Tokyo, Japan, Sept. 30-Oct. 1, 2003.
  13. "Influence of C incorporation on the initial growth of epitaxial NiSi2 on Si(100)", E. Okada, S. Oida, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda, in Abstr. of The 7th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, p. 78, Nara, Japan, Nov. 16-20, 2003.
  14. "Growth of silicon nanocrystals with high number density for floating dot memory", S. Naito, M. Satake, H. Kondo, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda, in Abstr. of 2003 International Microprocesses and Nanotechnology Conference, pp. 20-21, Tokyo, Japan, Oct. 29-31, 2003.
  15. "Nanoscale analysis of local leakage currents in stressed gate SiO2 films by conducting atomic force microscopy", H. Kondo, A. Seko, Y. Watanabe, A. Sakai, S. Zaima, and Y. Yasuda, in Abstr. of 2003 Materials Research Society Fall Meeting, Boston, USA, Dec. 1-5, 2003.
  16. "Praseodymiun silicate formation by post-growth high temperature annealing", A. Sakai, S. Sakashita, M. Sakashita, S. Zaima, Y. Yasuda, and S. Miyazaki, in Abstr. of 2003 Materials Research Society Fall Meeting, Dec. 1-5, 2003, Boston, USA.
  17. "Detection of stress-induced defects in gate SiO2 films by conducting atomic force microscopy", Y. Watanabe, A. Seko, H. Kondo, A. Sakai, S. Zaima and Y. Yasuda, in Abstr. of The 11th International Colloquium on Scanning Probe Microscopy, Shizuoka, Japan, Dec. 11-13, 2003.
  18. "Local discharging of carriers at nanometer scale defects in gate SiO2 thin films observed by conducting atomic force microscopy", A. Seko, Y. Watanabe, H. Kondo, A. Sakai, S. Zaima, and Y. Yasuda, in Abstr. of The 11th International Colloquium on Scanning Probe Microscopy, Shizuoka, Japan, Dec. 11-13, 2003.

2002
  1. Invited:"Novel growth method of thin strain-relaxed SiGe films on Si substrates", A. Sakai, K. Suhimoto, T. Yamamoto, M. Okada, H. Ikeda, O. Nakatsuka, S. Zaima, and Y. Yasuda, Second International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Kofu, Japan, Jun. 2-4, 2002.
  2. "Formation mechanism of low resistance contact in NiSi/Si system Ni/Si", O. Nakatsuka, Y. Tsuchiya, A. Sakai, S. Zaima, and Y. Yasuda, Second International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Kofu, Japan, Jun. 2-4, 2002.
  3. "Structural and electrical properties in Ni/Si(100) contacts", Y. Tsuchiya O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda, Second International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Kofu, Japan, Jun. 2-4, 2002.
  4. "Effect of Ge on solid phase epitaxy of CoSi2 on Si(100)", O. Nakatsuka, H. Onoda, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Second International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Kofu, Japan, Jun. 2-4, 2002.
  5. "Control of residual strain in SiGe buffer layers on Si substrates with ultra- thin Ge interlayers", T. Yamamoto, T. Egawa, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Second International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Kofu, Japan, Jun. 2-4, 2002.
  6. "Surface smoothing of strain-relaxed SiGe layers on Si substrates in two-step strain relaxation procedure", T. Egawa, T. Yamamoto, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Second International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Kofu, Japan, Jun. 2-4, 2002.
  7. Invited:"Control in the initial growth of heteroepitaxial Si1-x-yGexCy on Si(100) substrates", S. Zaima, A. Sakai, and Y. Yasuda, International Conference on Solid Films and Surfaces, Marseille, France, Jul. 8-11, 2002.
  8. "Influence of Ge and C for reaction in Ni/p+-Si1-x-yGexCy/Si(100) contacts", Y. Tsuchiya, O. Nakatsuka, A. Sakai, S. Zaima, J. Murota, and Y. Yasuda, 2002 International Conference on Solid State Device and Materials, Nagoya, Japan, Sep. 17-19, 2002.
  9. "Local leakage current of HfO2 thin films characterized by conducting atomic force microscopy", H. Ikeda, T. Goto, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda, 2002 International Conference on Solid State Device and Materials, Nagoya, Japan, Sep. 17-19, 2002.
  10. "Structural and electrical properties of HfO2-TiO2 composite films formed by pulsed laser deposition", K. Honda, S. Goto, M. Sakashita, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, 2002 International Conference on Solid State Device and Materials, Nagoya, Japan, Sep.17-19, 2002.
  11. "Scanning tunneling microscopy of initial nitridation processes on oxidized Si(100) surface with radical nitrogen", R. Takahashi, Y. Kobayashi, H. Ikeda, M. Sakashita, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda, 2002 International Conference on Solid State Device and Materials, Nagoya, Japan, Sep. 17-19, 2002.
  12. "Novel nonvolatile random access memory with Si nanocrystals for ultra low power scheme", A. Shibata, H. Kotaki, T. Ogura, N. Arai, K. Adachi, S. Kakimoto, A. Kito, A. Sakai, S. Zaima, and Y. Yasuda, 2002 International Conference on Solid State Device and Materials, Nagoya, Japan, Sep. 17-19, 2002.
  13. "Initial growth process of TiN films in ultra-high vacuum rapid thermal chemical vapor deposition", Y. Okuda, S. Naito, O. Nakatsuka, T. Okuhara, A. Sakai, S. Zaima, and Y. Yasuda, Advanced Metallization Conference 2002: 12th Asian Session, Tokyo, Japan, Oct. 29-30, 2002.
  14. "Low Resistance Contact with NiSi for sub-0.1 um Si ULSI Devices", O. Nakatsuka, Y. Tsuchiya, A. Sakai, S. Zaima, and Y. Yasuda, The 3rd Japan-Korrea Joint Workshop on Advanced Semiconductor Processes and Equipments, Hakone, Japan, Oct. 29-30, 2002.
  15. "Effect of Al interlayer on two-step growth of CoSi2 on Si(100)", E. Okada, H. Onoda, O. Nakatsuka, H. Ikeda, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda, Fourth International Symposium on Control of Semiconductor Interfaces, Karuizawa, Japan, Oct. 21-25, 2002.
  16. "Epitaxial growth of CoSi2 films on oxygen-adsorbed Si(100) surfaces", Y. Hayashi, A. Sakai, O. Nakatsuka, S. Zaima, and Y. Yasuda, Fourth International Symposium on Control of Semiconductor Interfaces, Karuizawa, Japan, Oct. 21-25, 2002.
  17. "Improvement in morphology of nickel silicide film with carbon", O. Nakatsuka, Y. Tsuchiya, A. Sakai, S. Zaima, J. Murota, and Y. Yasuda, 3rd International Workshop on Junction Technology 2002, Tokyo, Japan, Dec. 2-3, 2002.

2001
  1. "Study on solid-phase reaction in Ti/p+-Si1-x-yGexCy/Si(100) contacts", A. Tobioka, Yoshinori Tsuchiya, H. Ikeda, A. Sakai, Y. Yasuda, S. Zaima, and J. Murota, European Materials Research Society 2001 Spring Meeting, Strasbourg, France, Jun. 5-8, 2001.
  2. "Formation of strain-relaxed SiGe films on Si substrates with cap layers", K. Sugimoto, T. Yamamoto, M. Okada, H. Ikeda, A. Sakai, Y. Yasuda, and S. Zaima, European Materials Research Society 2001 Spring Meeting, Strasbourg, France, Jun. 5-8, 2001.
  3. "Electrical properties and solid-phase reactions in Ni/Si(100) contacts", Y. Tsuchiya, A. Tobioka, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, 2001 International Conference on Solid State Devices and Materials (SSDM2001), Tokyo, Japan, Sept. 26-28, 2001.
  4. "Growth processes and electrical characteristics of silicon nitride films formed on Si(100) by radical nitrogen", H. Ikeda, D. Matsushita, S. Naito, K. Ohmori, A. Sakai, S. Zaima, and Y. Yasuda, 2001 International Conference on Solid State Devices and Materials (SSDM 2001), Tokyo, Japan, Sept. 26-28, 2001.
  5. "Structural and electrical characteristics of HfO2 films fabricated by pulsed laser deposition", H. Ikeda, S. Goto, K. Honda, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda, 2001 International Conference on Solid State Devices and Materials (SSDM 2001), Tokyo, Japan, Sept. 26-28, 2001.
  6. Invited:"Dislocations and microstructure evolution in semiconductor thin films", A. Sakai, IUVSTA 15th International Vacuum Congress, AVS 48th International Symposium, 11th International Conference on Solid Surfaces, San Francisco, USA, Oct. 28 - Nov.2, 2001.
  7. "Structural relaxation at SiO2/Si(100) interfaces studied by coaxial impact collision ion scattering spectroscopy", H. Ikeda, M. Wasekura, A. Sakai, S. Zaima, and Y. Yasuda, 15th International Vacuum Congress (IVC), San Francisco, USA, 28 Oct. 28-Nov. 2, 2001.
  8. "Electrical Properties of Ni silicide/silicon contact", Y. Tsuchiya, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Advanced Metallization Conference 2001 (ADMETA2001): Asian Session, Tokyo, Japan, 30-31 Oct. 2001.
  9. "Study on solid phase Reactions in Ti/p+-Si1-x-yGexCy/Si(100) contacts", A. Tobioka, Yoshinori Tsuchiya, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Advanced Metallization Conference 2001 (ADMETA2001): Asian Session, Tokyo, Japan,Oct. 30-31, 2001.
  10. "Formation of TiN films by ultra-high vacuum rapid thermal chemical vapor deposition", S. Naito, M. Okada, O. Nakatsuka, T. Okuhara, A. Sakai, S. Zaima, and Y. Yasuda, Advanced Metallization Conference 2001 (ADMETA2001): Asian Session, Tokyo, Japan, Oct. 30-31, 2001.
  11. "Ultra-high vacuum rapid thermal chemical vapor deposition for the formation of TiN films as barrier metal", S. Naito, M. Okada, O. Nakatsuka, M. Sakashita, T. Okuhara, A. Sakai, S. Zaima, and Y. Yasuda, 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices, Mie, Japan, Nov. 14-16, 2001.
  12. "Effect of rapid thermal annealing on structural and electrical properties of HfO2 films formed by pulsed laser deposition", K. Honda, S. Goto, M. Sakashita, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices, Mie, Japan, Nov. 14-16, 2001.
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