à–žE’†’ËŒ¤
Zaima&Nakatsuka Laboratory
[English]

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ÅIXV“ú: 2017/3/30

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ŽóÜ

  1. •½¬28”N“x“ú–{‰»Šw‰ï“ŒŠCŽx•”’·Ü, •Ÿ“c‰ë‘å, 2017”N3ŒŽ27“úD
  2. ‘æ41‰ñi2016”NH‹Gj‰ž—p•¨—Šw‰ïu‰‰§—ãÜ, ûü‹´P‘¾, g…’†ƒpƒ‹ƒXƒŒ[ƒUƒAƒj[ƒ‹‚ð—p‚¢‚½‘½Œ‹»GeSn‚ւ̍‚”Z“xnŒ^ƒh[ƒsƒ“ƒOh i‘啪—Þ•ª‰ÈFŒ‹»HŠw, 2017”NjD
  3. “dŽqƒfƒoƒCƒXŠE–ʃeƒNƒmƒƒW[Œ¤‹†‰ï|Þ—¿EƒvƒƒZƒXE•]‰¿‚Ì•¨—|i‘æ22‰ñŒ¤‹†‰ïj ˆÀ“cÜC ûü‹´P‘¾Cg…’†ƒpƒ‹ƒXƒŒ[ƒUƒAƒj[ƒ‹‚ð—p‚¢‚½‘½Œ‹»Ge1-xSnx‘w’†Sb‚̍‚Šˆ«‰»hC 2017”N1ŒŽ21“úD
  4. ‘æ38‰ñ‰ž—p•¨—Šw‰ï—DG˜_•¶Ü, Y. Kamata, M. Koike, E. Kurosawa, M. Kurosawa, H. Ota, O. Nakatsuka, S. Zaima, and T. Tezuka, gOperation of inverter and ring oscillator of ultrathin-body poly-Ge CMOSh, Appl. Phys. Express 7 (12), 121302 (4 pages) (2014)ji2016”N9ŒŽ13“új
  5. APEX/JJAP Editorial Contribution AwardC’†’Ë—C2016”N4ŒŽ6“úD
  6. •½¬27”N“x“ú–{‰»Šw‰ï“ŒŠCŽx•”’·ÜipdfjCûü‹´P‘¾C2016”N3ŒŽ25“úD
  7. •½¬27”N“x“ú–{‰»Šw‰ï“ŒŠCŽx•”’·ÜipdfjC’·]—SŽ÷C2016”N3ŒŽ25“úD
  8. ‰ž—p•¨—Šw‰ï “ŒŠCŽx•”vŒ£ÜCà–žèN–¾C2016”N1ŒŽ9“úD
  9. Outstanding Presentation Award: International Symposium on EcoTopia Science 2015 (ISETS'15), S. Ike, O. Nakatsuka, Y. Moriyama, M. Kurosawa, N. Taoka, Y.Imai, S. Kimura, T. Tezuka, and S. Zaima, gX-ray Microdiffraction Characterization of Local Strain Distribution in GeSn/Ge Nanostructuresh, 2015”N11ŒŽ29“ú.
  10. 2015 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES  (IWDTF2015) Young Paper Award, Y. Nagae, gEvaluation of Energy Band Structure of Si1-xSnx by Density Functional Theory Calculation and Photoelectron Spectroscopyh, 2015”N11ŒŽ4“úD
  11. ‰ž—p•¨—Šw‰ï Œ‹»HŠw•ª‰È‰ï ”­•\§—ãÜi‰ž—p•¨—Šw‰ïŒ‹»HŠw•ª‰È‰ïŽåÃE‘æ4‰ñŒ‹»HŠw–¢—ˆmjCŽu‘º—m‰îCg‚ŽŸGeƒvƒŠƒJ[ƒT[‚ð—p‚¢‚½’ቷin-situ Pƒh[ƒsƒ“ƒO‚É‚æ‚鍂Šˆ«Ge:PŒ`¬hC2015”N10ŒŽ29“úD
  12. SSDM Paper Award 2015, Y. Kamata, M. Koike, E. Kurosawa, M. Kurosawa, H. Ota, O. Nakatsuka, S. Zaima, and T. Tezuka, gOperations of CMOS Inverter and Ring Oscillator Composed of Ultra-Thin Body Poly-Ge p- and n-MISFETs for Stacked Channel 3D-IC h, 2015”N9ŒŽ28“ú.
  13. ADMETA Technical Achievement Award 2014, O. Nakatsuka, Y. Deng, M. Sakashita, and S. Zaima, gFormation of Epitaxial NiGe Layer on Ge(001) Substrate and Influence of Interface Structure on Schottky Barrier Heighth, .2015”N9ŒŽ17“úD
  14. International Workshop on Junction Technology 2015 (IWJT2015) Best Paper AwardCûü‹´P‘¾C•àV¹ŽuC’rã_Câ‰º–ž’jC’|“à˜a‰Ì“ށC’†’Ë—Cà–žèN–¾CgFormation of Ge pn-junction diode by phosphorus doping with liquid immersion laser irradiationhC2015”N6ŒŽ11“úD
  15. ‰ž—p•¨—Šw‰ï ƒVƒŠƒRƒ“ƒeƒNƒmƒƒW[•ª‰È‰ï Œ¤‹†§—ãÜC •àV¹ŽuCgLarge grain growth of Ge-rich Ge1|x Snx (x ≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing waterhC2015”N3ŒŽ13“úD
  16. ‰ž—p•¨—Šw‰ï Žx•”Šwpu‰‰‰ï ”­•\§—ãÜCó–ìF“TCgGe1-x-ySixSnyƒG ƒsƒ^ƒLƒVƒƒƒ‹‘w‚ÌŒ‹»«‚̘c\‘¢ˆË‘¶«hC2015”N1ŒŽ10“úD
  17. ‘æ36‰ñi2014”Nt‹Gj‰ž—p•¨—Šw‰ïu‰‰§—ãÜC‰Á“¡Œö•FCg”MŽ_‰»‚É‚¨‚¯‚éGe(001)Šî”ãGe1-xSnx‘w ‚Ì•\–ÊSnÍo‚ɑ΂·‚é”MˆÀ’萫hC2014”N9ŒŽD
  18. ‘æ2‰ñTIAƒiƒmƒGƒŒƒNƒgƒƒjƒNƒXEƒTƒ}[ƒXƒN[ƒ‹ §—ãÜCó–ìF“TC2014”N8ŒŽ29“úD
  19. ‘æ2‰ñTIAƒiƒmƒGƒŒƒNƒgƒƒjƒNƒXEƒTƒ}[ƒXƒN[ ƒ‹ §—ãÜCŽR‰H—²C2014”N8ŒŽ29“úD
  20. ‘æ18‰ñ“ú–{•\–ʉȊw‰ï Šw‰ïÜC à–žèN–¾CgƒVƒŠƒRƒ“ƒiƒmƒGƒŒƒNƒgƒƒjƒNƒX‚Ì‚½‚߂̐VÞ—¿ŠJ”­‚Æ•¨«‚ÉŠÖ‚·‚錤‹†hC2014”N5ŒŽ24“úD
  21. ‰ž—p•¨—Šw‰ïŽx•”Šwpu‰‰‰ï”­•\§—ãÜi‰ž—p•¨—Šw‰ïSC“ŒŠC’n‹æŠwpu‰‰‰ï2013jCŽÄŽR–΋vCgAl2O3/Ge \‘¢‚ÌŒã”MŽ_‰»‚É‚æ‚éAlGeOŒ`¬‚É‚Æ‚à‚È‚¤ŠE–Ê“Á«‚̉ü‘PhC2014”N2ŒŽ14“úD
  22. ‰ž—p•¨—Šw‰ïŽx•”Šwpu‰‰‰ï”­•\§—ãÜi‰ž—p•¨—Šw‰ïSC“ŒŠC’n‹æŠwpu‰‰‰ï2013jCŽ›àVŒªŒáCgGe1-x-ySnxCy¬ »”––Œ‚̃Gƒsƒ^ƒLƒVƒƒƒ‹¬’·‚¨‚æ‚ÑŒ‹»\‘¢•]‰¿hC2014”N2ŒŽ14“úD
  23. ‘æ13‰ñ“ú–{•\–ʉȊw‰ï’†•”Žx•”Œ¤‹†‰ïEu‰‰§—ãÜCDeng YunshengCgEpitaxial formation and electrical property of Ni Germanide/Ge(110) contacthC2013”N12ŒŽ21“úD
  24. ‘æ5‰ñ”––Œ‘¾—z“d’rƒZƒ~ƒi[E—DGÜC’©‰Hr‰îCgGeSiSn/n-Ge(001) ƒwƒeƒÚ‡Œ^‘¾—z“d’r‚̍쐻‚¨‚æ‚ÑŒõ“d“Á«•]‰¿hC2013”N11ŒŽ15“úD
  25. ‘æ35‰ñ‰ž—p•¨—Šw‰ï˜_•¶ÜCà–žèN–¾C‰ð à˜_•¶ wƒ| ƒXƒgƒXƒP[ƒŠƒ“ƒO‹Zp‚ÌŒ»ó‚ÆŠú‘Ò‚³‚ê‚éV“WŠJxC2013”N9ŒŽ16“úD
  26. ‘æ‚P‰ñTIAƒiƒmƒGƒŒƒNƒgƒƒjƒNƒXEƒTƒ}[ƒXƒN[ƒ‹•\² iƒ|ƒXƒ^[ÜjC’riˆêCg˜cGeƒ`ƒƒƒlƒ‹MOSFET‚ÉŒü‚¯‚½–„‚ߍž‚ÝGe1-xSnx/Ge”÷ ×\‘¢‚̋ǏŠ˜c•]‰¿hC2013”N9ŒŽ2“úD
  27. ‘æ12 ‰ñ“ú–{•\–ʉȊw‰ï’†•”Žx•”Œ¤‹†‰ïEu‰‰§—ãÜC•àV¹ŽuCgSn—U‹N‰¡•ûŒü¬’·‚É‚æ‚éGe1-xSnx/SiO2\‘¢‚̒ቷŒ`¬‚ÉŠÖ‚·‚錤 ‹†hC2012”N12ŒŽ22“úD
  28. Œ¤‹†ƒ|ƒXƒ^[”­•\‰ïE”­•\§—ãÜi‰ž—p•¨—Šw‰ïŒ‹»HŠw•ª‰È‰ïŽåÃE‘æ‚P‰ñŒ‹»HŠw–¢—ˆmjC•àV¹ŽuCgŽŸ¢ ‘ãƒtƒŒƒLƒVƒuƒ‹ƒfƒoƒCƒXŽÀŒ»‚ÉŒü‚¯‚½â‰–ŒãGeSn”––Œ‚̒ቷŒ‹»¬’·hC2012”N11ŒŽ8“úD
  29. Young Scientist Award SILVER AWARDiIUMRS International Conference on Electronic Materials 2012jCó–ìF“TCgEpitaxial Growth of Ge1-xSnx Layers on (110)-oriented Si and Ge SubstrateshC2012”N9ŒŽ28“úD
  30. ‘æ11‰ñ“ú–{•\–Ê ‰ÈŠw‰ï’†•”Žx•”Œ¤‹†‰ïEu‰‰§—ãÜCŽÄŽR–΋vCgAl2O3/Ge ƒQ[ƒgƒXƒ^ƒbƒN\‘¢‚ɑ΂·‚éŽ_‘f”Mˆ—‚̉»ŠwŒ‹‡ó‘Ô‚¨‚æ‚ÑŠE–Ê“Á«‚É—^‚¦‚éŒø‰ÊhC2011”N12ŒŽ24“úD
  31. Award for Encouragement of Research in Thin Films iThe 15th International Conference on Thin Films (ICTF-15)jC‰Á“¡Œö•FCgEffect of Chemical Bonding State on Electrical Properties of Al2O3/Ge StructurehC2011”N11ŒŽ11“úD
  32. Best Student Paper Awards (7th International Conference on Si Epitaxy and Heterostructures (ICSI-7))C’†‘ºä—¢CgGrowth of Ge1-xSnx heteroepitaxial layers with very high Sn contents on InP(001) substrateshC2011”N9ŒŽ1“úD
  33. “ú–{•\–ʉȊw‰ïEƒtƒFƒ[C à–žèN–¾C2011”N5ŒŽ23“úD
  34. ‘æ9 ‰ñ“ú–{•\–ʉȊw‰ï’†•”Žx•”Œ¤‹†‰ïEu‰‰§—ãÜC ‰Á“¡Œö•FCgALD-PrŽ_‰»–Œ/Ge\‘¢‚É‚¨‚¯‚é’‚‘f‚É‚æ‚éŠE–ʐ§ŒähC2009”N12ŒŽ19“úD
  35. ‘æ8 ‰ñ“ú–{•\–ʉȊw‰ï’†•”Žx•”Œ¤‹†‰ïEu‰‰§—ãÜC Žu‘º—m‰îCgL’·˜cGe‘wŽÀŒ»‚Ì‚½‚߂̍‚Sn‘g¬Ge1-xSnxƒoƒb ƒtƒ@‘w¬’·hC 2008”N12ŒŽ13“úD
  36. Award for Encouragement of Research in Materials Science iThe IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008)jC Žu‘º—m‰îC2008”N12ŒŽ13“úD
  37. ISTDM 2008 Best Poster Award (The fourth International SiGe Technology and Device Meeting)C –L“c‰p“ñCŽðˆä˜NC’†’Ë—Cà–žèN–¾C¬ì³‹BCˆéŠLG“¹Cå“c„ŽmCòÈGŽ¡C•\˜a•FC2008”N5ŒŽ13“ú.
  38. ‘æ7‰ñ“ú–{•\–ʉȊw‰ï’†•”Žx•”Œ¤‹†‰ïEu‰‰§—ãÜC ŸNˆäW–çC‹ß“¡”ŽŠîCŽðˆä˜NC¬ì³‹BCà–žèN–¾C gƒVƒNƒƒyƒ“ƒ^ƒ“ŒnŒ´—¿‚ð—p‚¢‚½‰t‘̃\[ƒXMOCVD–@‚É‚æ‚éPrŽ_‰»–Œ‚̍쐻‚Æ‚»‚Ì•¨«•]‰¿hC ‘æ7‰ñ“ú–{•\–ʉȊw‰ï’†•”Žx•”Šwpu‰‰‰ïC2007”N12ŒŽ15“úD
  39. ‰ž—p•¨—Šw‰ïƒtƒFƒ[C à–žèN–¾C2007”N8ŒŽ3“úD
  40. ‘æ3‰ñ P&I ƒpƒeƒ“ƒgƒRƒ“ƒeƒXƒgF ƒpƒeƒ“ƒgEƒIƒuEƒUEƒCƒ„[ ƒvƒƒZƒXEƒeƒNƒmƒƒW[•”–å (pdf) C“Á‹–uƒjƒbƒPƒ‹ƒVƒŠƒRƒ“Œn”––ŒCƒjƒbƒPƒ‹ƒVƒŠƒRƒ“Œn‘½‘w–Œ\‘¢‹y‚уjƒbƒPƒ‹ƒVƒŠƒRƒ“Œn”––Œ‚̍쐻•û–@vC “Á‹–‘æ3733424†i”­–¾ŽÒFà–žèN–¾CˆÀ“cK•vCŽðˆä˜NC’†’Ë—C“y‰®‹`‹KjC2006”N11ŒŽ10“úD
  41. ‰ž—p•¨—Šw‰ïu‰‰§—ãÜi‘æ20‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï i2006”Nt‹GjjC’|“à³‘¾˜YC g‰¼‘zGe(001)Šî”ã‚É‚¨‚¯‚é˜cŠÉ˜aGe1-xSnxƒoƒb ƒtƒ@‘w‚̐¬’·‚ƍ\‘¢•]‰¿hC2006”N6ŒŽD
  42. Interesting Paper Award •ž•”ÍF ‘æ11‰ñƒQ[ƒgƒXƒ^ƒbƒNŒ¤‹†‰ïiWorkshop on Gate Stack Technology and Physics (2006)jC ¢ŒÃ–¾‹`C u‰‰‘è–ځFgLa2O3-Al2O3•¡‡–Œ’†‚̋ǏŠ“d—¬ƒŠ[ƒN‚Ì‹NŒ¹‚ÆŽ_‘f”Mˆ—‚ÌŒø‰ÊhC2006”N2ŒŽ4“úD
  43. Award for Encouragement of Research of Materials Sciencei‘æ16‰ñ“ú–{MRSŠwpƒVƒ“ƒ|ƒWƒEƒ€§—ãÜjC’r–ì‘å•ãC gNickel-germanide MOSƒQ[ƒg“d‹É‚É‚¨‚¯‚éŽdŽ–ŠÖ”‚Ì‘g¬ˆË‘¶«hC2005”N12ŒŽ28“úD
  44. MNC2004 Award for Outstanding PaperCS. Naito, T. Ueyama, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, gFabrication and Evaluation of Floating Gate Memories with Surface-Nitrided Si NanocrystalshCJpn. J. Appl. Phys. 44 (7B), pp. 5687-5691 (2005)C 2005”N10ŒŽ26“ú.
  45. Award for Encouragement of Research of Materials Sciencei‘æ15‰ñ“ú–{MRSŠwpƒVƒ“ƒ|ƒWƒEƒ€§—ãÜjC‹àŽqKLC gNiGeƒQ[ƒgMOSƒfƒoƒCƒX‚̍쐻‚Æ“d‹C“I“Á«•]‰¿hC2003”N12ŒŽ24“úD
  46. SSDM Young Researcher Award (International Conference on Solid State Devices and Materials)C“y‰®‹`‹KC2003”N9ŒŽD
  47. Japanese Journal of Applied Physics •ÒWvŒ£ÜC à–žèN–¾C2003”N3ŒŽD
  48. ‘æ49‰ñi•½¬14”N“xj‘å‰Í“àÜ‹L”OÜCŽðˆä˜NC2003”ND

‘ÐE‰ðà

  1. gChapter 32 - Heteroepitaxial growth of Si, Si1|xGex-, and Ge-based alloyh, O. Nakatsuka and S. Zaima, in Handbook of Crystal Growth (Second Edition), (edited by T. Kuech, Elsevier, 2015) pp. 1301-1318.
  2. g˜˜_ià–žèN–¾jh,@g‘æ3ÍC‘æ3ßCGeƒGƒsƒ^ƒLƒVƒƒƒ‹¬’·‚Æ”––Œ\‘¢§Œäi’†’Ë—jh, ƒ|ƒXƒgƒVƒŠƒRƒ“”¼“±‘́|ƒiƒm¬–Œƒ_ƒCƒiƒ~ƒNƒX‚ƊEŠE–ÊŒø‰Ê|, (Š”Ž®‰ïŽÐƒGƒkEƒeƒB[EƒGƒXC2013j, pp. 160-167, 2013D
  3. gChapter 1.4: Heterostructure Interfaces and Strainh, O, Nakatsuka and S. Zaima, in Handbook of Silicon Photonics (edited by L. Vivien and L. Pavesi, CRC Press, 2013), pp. 1-11, pp. 37-54,
  4. gChapter 17: Slicide and germanide technology for interconnections in ultra-large-scale integrated (ULSI) applicationsh, S. Zaima and O. Nakatsuka, in Silicon-Germanium (SiGe) Nanostructures: Production, Properties and Applications in Electronics, (edited by Y. Shiraki and N. Usami, Woodhead Publishing, 2011), pp. 456-469.
  5. gChapter 8: Silicideh, O. Nakatsuka and S. Zaima, in Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications, (edited by Y. Shacham-Diamand, T. Osaka, M. Datta, T. Ohba, Springer) pp. 121-130, 2009.
  6. g‘æ3Í3.1ß ”¼“±‘Ì”––Œh, à–žèN–¾, g”––ŒHŠwh, (‹àŒ´âêŠÄC, ”’–Ø–õŠ°/‹g“c’åŽj•Ò, ŠÛ‘PŠ”Ž®‰ïŽÐ), pp. 119-128, 2003.
  7. g‘æ4Í4-1ß ƒVƒŠƒTƒCƒh‰»ŒÅ‘Š¬’·h, à–žèN–¾, ƒGƒsƒ^ƒLƒVƒƒƒ‹¬’·‚̃tƒƒ“ƒeƒBƒA, (’†“‡ˆê—Y•Ò, ‹¤—§o”Å), pp. 94-108, 2002.


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  1. gMOSƒLƒƒƒpƒVƒ^‹y‚ÑMOSFETh â‰º–ž’jCà–žèN–¾C’†’Ë—C’|“à˜a‰Ì“ށCŽÄŽR–΋vC“c‰ª‹I”VC‰Á“¡Œö•FC‹g“c“S•ºC “ÁŠJ2016-146382C2015oŠèD
  2. g”¼“±‘Ì”––Œ‚ÌŒ`¬•û–@hC •àV¹ŽuC’†’Ë—C“c‰ª‹I”VCà–žèN–¾C’rã_C Œö”ԍ†:WO2014136614 A1C2014”NoŠèD
  3. g”¼“±‘ÌŒ‹»‚̐»‘¢•û–@C”¼“±‘ÌŒ‹»‹y‚Ñ”¼“±‘̃fƒoƒCƒXhC •àV¹ŽuC’†’Ë—C“c‰ª‹I”VCâ‰º–ž’jCà–žèN–¾C “ÁŠJ2015-156430C2014”NoŠèD
  4. g”¼“±‘ÌŒ‹»C‚»‚̐»‘¢•û–@C‹y‚Ñ‘½‘w–Œ\‘¢‘́hC •àV¹ŽuC“c‰ª‹I”VCâ‰º–ž’jC’†’Ë—Cà–žèN–¾C “ÁŠJ2014-154765C2013”NoŠèD
  5. g‘½‘w–Œ\‘¢‘Ì‹y‚Ñ‚»‚ÌŒ`¬•û–@hC ’†’Ë—Cà–žèN–¾C–]ŒŽŒ’‘¾CŽu‘º—m‰îC “ÁŠJ2012-244069C2011”NoŠèD
  6. g‘½‘w–Œ\‘¢‘Ì‚¨‚æ‚Ñ‚»‚ÌŒ`¬•û–@hC ’†’Ë—CŽðˆä˜NC¬ì³‹BCà–žèN–¾C‹ß“¡”ŽŠîC“’ìŸ‹KC…’J‘ì–çC “ÁŠJ2009-272504C“Á‹–5553135†C2009”NoŠèD
  7. gL’£˜cƒQƒ‹ƒ}ƒjƒEƒ€”––Œ‚̍쐻•û–@CL’£˜cƒQƒ‹ƒ}ƒjƒEƒ€”––ŒC‹y‚Ñ‘½‘w–Œ\‘¢‘́hC ’†’Ë—CŽðˆä˜NC¬ì³‹BCà–žèN–¾C‹ß“¡”ŽŠîC“’ìŸ‹KC…’J‘ì–çC “ÁŠJ2009|272504C“Á‹–5553135†C2008”NoŠèD
  8. g‹à‘®Ž_‰»•¨”––Œ‚̐¬–Œ•û–@hC ¬X‰p”VC•Ÿˆä’·—YCà–žèN–¾Câ‰º–ž’jC‹ß“¡”ŽŠîC¼ˆä—T‚C “ÁŠJ2010-016298C2008”NoŠèD
  9. gL’£˜cƒQƒ‹ƒ}ƒjƒEƒ€”––Œ‚̍쐻•û–@CL’£˜cƒQƒ‹ƒ}ƒjƒEƒ€”––ŒC‹y‚Ñ‘½‘w–Œ\‘¢‘́hC ’|“à³‘¾˜YCŽðˆä˜NC’†’Ë—C¬ì³‹BCà–žèN–¾C “ÁŠJ2008-288395C“Á‹–5238189C2007”NoŠèD
  10. gƒWƒƒ[ƒ}ƒiƒCƒh”––ŒCƒWƒƒ[ƒ}ƒiƒCƒh”––Œ‚̍쐬•û–@CƒWƒƒ[ƒ}ƒiƒCƒh”––Œ‚ð”õ‚¦‚½ƒQƒ‹ƒ}ƒjƒEƒ€\‘¢‘́hC ’†’Ë—CŽðˆä˜NC—é–Ø“Ö”VC¬ì³‹BCà–žèN–¾C “ÁŠJ2009-081159C“Á‹–5243762†C2007”NoŠèD
  11. g˜c‚݊ɘaƒQƒ‹ƒ}ƒjƒEƒ€–Œ‹y‚Ñ‚»‚̐»‘¢•û–@•À‚Ñ‚É‘½‘w–Œ\‘¢‘́hC Žðˆä˜NC“’ìŸ‹KC’†’Ë—C¬ì³‹BCà–žèN–¾C ‘ÛŒöŠJ”ԍ†FWO2007/066811C“Á‹–5156950†C2006”NoŠèD
  12. g”¼“±‘Ì‘fŽq—pŠîÞ‹y‚Ñ‚»‚̐»‘¢•û–@hC ‹ß“¡”ŽŠîCà–žèN–¾C¬ì³‹BCŽðˆä˜NCâ‰º–ž’jC“à“¡TÆCãŽR’m‹ICˆÀ“cK•vC “ÁŠJ2006-245133C2005”NoŠèD
  13. gƒJ[ƒ{ƒ“ƒiƒmƒ`ƒ…[ƒuŒ`¬—pŠîÞ‹y‚Ñ‚»‚̐»‘¢•û–@•À‚тɃJ[ƒ{ƒ“ƒiƒmƒ`ƒ…[ƒuhC Žðˆä˜NC’†’Ë—Cà–žèN–¾CŽí“c’qC¬ì³‹BC “ÁŠJ2007-015890C2005”NoŠèD
  14. gƒVƒŠƒTƒCƒh–Œ‚̍쐻•û–@C‘½‘w–Œ’†ŠÔ\‘¢‘Ì‹y‚Ñ‘½‘w–Œ\‘¢‘́hC ’†’Ë—CŽðˆä˜NCà–žèN–¾CˆÀ“cK•vC‘å‹v•Û˜aÆC“y‰®‹`‹KC “ÁŠJ2005-243923C“Á‹–‘æ3879003†C2004”NoŠèD
  15. gƒGƒsƒ^ƒLƒVƒƒƒ‹¬’·—pŠîÞ‹y‚Ñ‚»‚̐»‘¢•û–@•À‚Ñ‚É‘½‘w–Œ\‘¢‘́hC Žðˆä˜NC“c‰ª‹I”VC’†’Ë—Cà–žèN–¾CˆÀ“cK•vC “ÁŠJ2006-032575C“Á‹–4296276†C2004”NoŠèD
  16. gâ‰–Œ‚ð—L‚µ‚½”¼“±‘Ì‘•’u‚̐»‘¢•û–@‹y‚Ñ”¼“±‘Ì‘•’uhC Žðˆä˜NCà–žèN–¾CˆÀ“cK•vCâ‰º–ž’jC‚‹´—º–çC “ÁŠJ2006-040977C2004”NoŠèD
  17. gƒjƒbƒPƒ‹ƒVƒŠƒTƒCƒh–Œ‚̍쐻•û–@C‹y‚Ñ‘½‘w\‘¢‘́hC à–žèN–¾CŽðˆä˜NC’†’Ë—CˆÀ“cK•vC “ÁŠJ2004-253606C2003”NoŠèD
  18. g×ü\‘¢‚̍쐻•û–@C‘½‘w–Œ\‘¢‘́C‚¨‚æ‚Ñ‘½‘w–Œ’†ŠÔ\‘¢‘́hC Žðˆä˜NCà–žèN–¾CˆÀ“cK•vC’†’Ë—C “ÁŠJ2004-253607C“Á‹–‘æ3878997†C2003”NoŠèD
  19. gƒƒ‚ƒŠ–Œ‹y‚уƒ‚ƒŠ‘fŽqhC •Ð‰ªk‘¾˜YCŠâ“c_CŽÄ“cWGCŽðˆä˜NCà–žèN–¾CˆÀ“cK•vC “ÁŠJ2004-259986C2003”NoŠèD
  20. gƒRƒoƒ‹ƒgƒVƒŠƒTƒCƒh–Œ‚̍쐻•û–@CƒRƒoƒ‹ƒgƒVƒŠƒTƒCƒh–ŒC‹y‚уRƒoƒ‹ƒgƒVƒŠƒTƒCƒh–Œì»—p‚Ì‘½‘w–Œ’†ŠÔ\‘¢‘́hC à–žèN–¾CˆÀ“cK•vCŽðˆä˜NC’†’Ë—C “ÁŠJ2004-253621C“Á‹–‘æ3700004†C2003”NoŠèD
  21. g‚—U“d—¦‹à‘®Ž_‰»•¨–Œ‚̍쐻•û–@C‚—U“d—¦‹à‘®Ž_‰»•¨–ŒC‘½‘w–Œ\‘¢‘́CƒQ[ƒgâ‰–ŒC‹y‚Ñ”¼“±‘Ì‘fŽqhC Žðˆä˜NCˆÀ“cK•vCà–žèN–¾Câ‰º–ž’jC‹ß“¡”ŽŠîCâ‰º^‰îC “ÁŠJ2005-11887C“Á‹–‘æ3831764†C2003”NoŠèD
  22. gƒVƒŠƒRƒ“ƒiƒmŒ‹»‚̍쐻•û–@CƒVƒŠƒRƒ“ƒiƒmŒ‹»Cƒtƒ[ƒeƒBƒ“ƒOƒQ[ƒgŒ^ ƒƒ‚ƒŠƒLƒƒƒpƒVƒ^\‘¢‚̍쐻•û–@C‹y‚уtƒ[ƒeƒBƒ“ƒOƒQ[ƒgŒ^ƒƒ‚ƒŠƒLƒƒƒpƒVƒ^\‘¢hC ‹ß“¡”ŽŠîCˆÀ“cK•vCà–žèN–¾CŽðˆä˜NCâ‰º–ž’jC“à“¡TÆC²’|³éC “ÁŠJ2005-129708C2003”NoŠèD
2002”NˆÈ‘O
  1. gƒvƒ‰ƒYƒ}—ã‹Nö”­–@‚É‚æ‚éŽ_‰»•¨‚‰·’´“`“±–Œ‚ÌŒ`¬•û–@‚Æ‚»‚Ì‘•’uhC ˆÀ“cK•vCà–žèN–¾C¬oN•vC “ÁŠJ•½03-146418C“Á‹–‘æ2785977†D
  2. g“dŽq”gŠ±Â‘fŽqhC ŠÛŽR“OC‰““¡“N˜YCˆÀ“cK•vCà–žèN–¾C “ÁŠJ•½7-183584C“Á‹–‘æ3329545†D
  3. g”¼“±‘̍¬»–Œ‚ÌŒ`¬–@hC ˆÀ“cK•vCà–žèN–¾CŽðˆä˜NCŽR’†ÍC’†’Ë—C “ÁŠJ2001-351862C“Á‹–‘æ3378912†D
  4. g”¼“±‘Ì‘•’u»‘¢•û–@hC ˆÀ“cK•vCà–žèN–¾C™–{Œ«CŽðˆä˜NC “ÁŠJ2002|217413C“Á‹–‘æ3488914†D
  5. gƒVƒŠƒRƒ“EƒQƒ‹ƒ}ƒjƒEƒ€EƒJ[ƒ{ƒ“ŽOŒ³¬»–Œ‚̍쐻•û–@‹y‚уVƒŠƒRƒ“EƒQƒ‹ƒ}ƒjƒEƒ€EƒJ[ƒ{ƒ“ŽOŒ³¬»–ŒhC ˆÀ“cK•vCà–žèN–¾C’¹–Ñ—T“ñCŽðˆä˜NC “ÁŠJ2002|289526C“Á‹–‘æ3451325†D
  6. gƒƒ‚ƒŠ–ŒCƒƒ‚ƒŠ‘fŽq‹y‚Ñ‚»‚̐»‘¢•û–@‚Æ”¼“±‘Ì‹L‰¯‘•’uhC Šâ“c_CŽÄ“cWGCô’¨rC¬‘qF”VC‘«—§_ˆê˜YCŠ`–{½ŽOCˆÀ“cK•vCà–žèN–¾CŽðˆä˜NC “ÁŠJ2002-252290D
  7. g”¼“±‘Ì‹L‰¯‘•’u‚¨‚æ‚Ñ”¼“±‘Ì‹L‰¯‘•’u‚̐»‘¢•û–@hC Šâ“c_CŽÄ“cWGCˆÀ“cK•vCà–žèN–¾CŽðˆä˜NC “ÁŠJ2003-318289D
  8. g‘fŽq“d‹É—p‚̃jƒbƒPƒ‹ƒVƒŠƒRƒ“Œn”––Œ‚̍쐻•û–@C‹y‚Ñ‘fŽq“d‹É—p‚Ì‘½‘w–Œ\‘¢hC ˆÀ“cK•vCà–žèN–¾CŽðˆä˜NC’†’Ë—C“y‰®‹`‹KC “ÁŠJ2003-324078C“Á‹–‘æ3876307†D
  9. gƒjƒbƒPƒ‹ƒVƒŠƒRƒ“Œn”––ŒCƒjƒbƒPƒ‹ƒVƒŠƒRƒ“Œn‘½‘w\‘¢‹y‚уjƒbƒPƒ‹ƒVƒŠƒRƒ“Œn”––Œ‚̍쐻•û–@hC à–žèN–¾CˆÀ“cK•vCŽðˆä˜NC’†’Ë—C“y‰®‹`‹KC “ÁŠJ2004-40013C“Á‹–‘æ3733424†D
  10. gƒVƒŠƒRƒ“ƒQƒ‹ƒ}ƒjƒEƒ€–Œ‚̍쐻•û–@CƒGƒsƒ^ƒLƒVƒƒƒ‹¬’·—pŠî”C‹y‚Ñ‘½‘w–Œ\‘¢‘́hC Žðˆä˜NC’†’Ë—Cà–žèN–¾CˆÀ“cK•vC “ÁŠJ2004-172276C“Á‹–‘æ3851950†D

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