中塚研
Nakatsuka Laboratory
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名古屋大学大学院・工学研究科・物質科学専攻
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最終更新日: 2024/5/30

研究論文・研究報告

2024
  1. "Tensile-strained Ge1−xSnx layers on Si (001) substrate by solid-phase epitaxy featuring seed layer introduction", T. Hiraide, S. Shibayama, M. Kurosawa, M. Sakashita, and O. Nakatsuka, Jpn. J. App. Phys. 63 (4), 045505 (7 pages) (2024).
  2. "Ge1−xSnx layers with x~0.25 on InP (001) substrate grown by low-temperature molecular beam epitaxy reaching 70°C and in-situ Sb doping", S. Shibayama, K. Takagi, M. Sakashita, M. Kurosawa, O. Nakatsuka, Mater. Sci. Semicond. Proc. 176, 108302 (8 pages) (2024).
  3. "Layer transfer of epitaxially grown Ge-lattice-matched Si27.8Ge64.2Sn8 films", T. Maeda, H. Ishii, W. H. Chang, S. Zhang, S. Shibayama, M. Kurosawa, and O. Nakatsuka, Mater. Sci. Semicond. Proc. 176, 108304 (7 pages) (2024).
  4. "Planar-type SiGe thermoelectric generator with double cavity structure", S Koike, R Yanagisawa, L Jalabert, R Anufriev, M Kurosawa, T Mori, M Nomura, Appl. Phys. Lett. 124, 123902 (6 pages) (2024).
  5. "GeSn/GeSiSn二重障壁構造における負性微分抵抗の発現", 石本修斗, 坂下満男, 黒澤昌志, 中塚理, 柴山茂久, 特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第29回）, 7-3 (4 pages) (2024).
  6. "In-situ SbドーピングによるInP上n型Ge0.75Sn0.25エピタキシャル膜の形成", 柴山茂久, 高木孝明, 坂下満男, 黒澤昌志, 中塚理, 特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第29回）, 12 (4 pages) (2024).
  7. "Al/GeSn(111)構造上への熱処理による極薄・高Sn組成GeSn表面偏析", 柴山茂久, 松本泰河, 大田晃生, 横川凌, 坂下満男, 黒澤昌志, 中塚 理, 特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第29回）, 13 (4 pages) (2024).
  8. "Al/GeSn(111)構造上への熱処理による極薄・高Sn組成GeSn表面偏析", 柴山茂久, 松本泰河, 大田晃生, 横川凌, 坂下満男, 黒澤昌志, 中塚 理, 特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第29回）, 13 (4 pages) (2024).
  9. "フォトニクス応用に向けたIV族混晶ヘテロ構造の結晶成長技術", 中塚理, 第52回薄膜・表面物理セミナー「先端集積回路の技術動向と光機能融合技術」, pp. 9-14 (2024).

2023
  1. "Crystalline and optoelectronic properties of Ge1−xSnx /high-Si-content-SiyGe1−x−ySnx double-quantum wells grown with low-temperature molecular beam epitaxy", S. Zhang, S. Shibayama, and O. Nakatsuka, Semicond. Sci. Technol. 38, 015018 (10 pages) (2023).
  2. "Lattice-matched growth of high-Sn-content (x∼ 0.1) Si1−xSnx layers on Si1−yGey buffers using molecular beam epitaxy", K. Fujimoto, M. Kurosawa, S. Shibayama, M. Sakashita, and O. Nakatsuka, Appl. Phys. Express 16 (4), 045501 (4 pages) (2023).
  3. "Heteroepitaxial growth of CaGe2 films on high-resistivity Si(111) substrates and its application for germanane synthesizing", K. Okada, S. Shibayama, M. Sakashita, O. Nakatsuka, and M. Kurosawa, Mater. Sci. Semicond. Proc. 161, 107462 (6 pages) (2023).
  4. "Emergence of ferroelectricity in ZrO2 thin films on TiN/Si featuring high temperature sputtering method", J. Nagano, S. Ikeguchi, T. Doi, M. Sakashita, O. Nakatsuka, and S. Shibayama, Mater. Sci. Semicond. Proc. 163, 107553 (8 pages) (2023).
  5. "Self-organized Ge1-xSnx quantum dots formed on insulators and their room temperature photoluminescence", K. Hashimoto, S. Shibayama, K. Asaka, M. Sakashita, M. Kurosawa, and O. Nakatsuka, Jpn. J. Appl. Phys. 62 (7), 075506 (8 pages) (2023).
  6. "(Invited) Epitaxial Growth Technique for Si1-XSnx Binary Alloy Thin Films", M. Kurosawa, S. Shibayama, M. Sakashita, and O. Nakatsuka, ECS Trans. 30, pp. 1534-1534 (2023).
  7. "Superior power generation capacity of GeSn over Si demonstrated in cavity-free thermoelectric device architecture", M. M. H. Mahfuz, K. Katayama, Y. Ito, K. Fujimoto, M. Tomita, M. Kurosawa, T. Matsuki, T. Watanabe, Jpn. J. Appl. Phys. 62 (SC), SC1058 (6 pages) (2023).
  8. "Preparation and thermoelectric characterization of boron-doped Si nanocrystals/silicon oxide multilayers", K. Shibata, S. Kato, M. Kurosawa, K. Gotoh, S. Miyamoto, N. Usami, Y. Kurokawa, Jpn. J. Appl. Phys. 62 (SC), SC1074 (8 pages) (2023).
  9. "Effect of nanostructuring on thermoelectric performance of SiGe thin films", S. Koike, R. Yanagisawa, M. Kurosawa, R. Jha, N. Tsujii, T. Mori, M. Nomura, Jpn. J. Appl. Phys. 62 (9), 095001 (4 pages) (2023).

2022
  1. "Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts with atomically flat interface by lowering of Schottky barrier height", T. Doi, S. Shibayama, M. Sakashita, K. Kojima, M. Shimizu, and O. Nakatsuka, Appl. Phys. Express 15 (1), 015501 (4 pages) (2022).
  2. "Photoluminescence properties of heavily Sb doped Ge1−xSnx and heterostructure design favorable for n+-Ge1−xSnx active layer", S. Zhang, M. Fukuda, J. Jeon, M. Sakashita, S. Shibayama, and O. Nakatsuka, Jpn. J. Appl. Phys. 61 (SA), SA1004 (8 pages) (2022).
  3. "Impact of oxide/4H-SiC interface state density on field-effect mobility of counter-doped n-channel 4H-SiC MOSFETs", T. Doi, S. Shibayama, M. Sakashita, N. Taoka, M. Shimizu, and O. Nakatsuka, Jpn. J. Appl. Phys. 61 (2), 021007 (7 pages) (2022).
  4. "Crystal structure change in multilayer GeH flakes by hydrogen desorption under ultrahigh vacuum environments", M. Itoh, M. Araidai, A. Ohta, O. Nakatsuka, and M. Kurosawa, Jpn. J. Appl. Phys. 61 (SC), SC1048 (6 pages) (2022).
  5. "Enhancement of channel mobility in 4H-SiC trench MOSFET by inducing stress at SiO2/SiC gate interface", E. Kagoshima, W. Takeuchi, K. Kutsuki, M. Sakashita, H. Fujiwara, and O. Nakatsuka, Jpn. J. Appl. Phys. 61 (SC), SC1068 (6 pages) (2022).
  6. "Visualization of local strain in 4H-SiC trench metal-oxide-semiconductor field-effect transistor using synchrotron nanobeam X-ray diffraction", W. Takeuchi, E. Kagoshima, K. Sumitani, Y. Imai, S. Shibayama, M. Sakashita, S. Kimura, H. Tomita, T. Nishiwaki, H. Fujiwara, and O Nakatsuka, Jpn. J. Appl. Phys. 61 (SC), SC1072 (10 pages) (2022).
  7. "Solid-phase crystallization of ultra-thin amorphous Ge layers on insulators", R. Oishi, K. Asaka, L. Bolotov, N. Uchida, M. Kurosawa, and O. Nakatsuka, Jpn. J. Appl. Phys. 61 (SC), SC1086 (6 pages) (2022).
  8. "High-pressure polycrystalline thin-film synthesis and semiconducting property of platinum pernitride", K. Niwa, T. Iizuka, M. Kurosawa, Y. Nakamura, H. O. Valencia, H. Kishida, O. Nakatsuka, T. Sasaki, N. A. Gaida, and M. Hasegawa, AIP Advances 12, 055318 (5 pages) (2022).
  9. "Sn-incorporation effect on thermoelectric properties of Sb-doped Ge-rich Ge1−x−ySixSny epitaxial layers grown on GaAs(001)", M. Kurosawa, M. Nakata, T. Zhan, M. Tomita, T. Watanabe, and O. Nakatsuka, Jpn. J. Appl. Phys. 61 (8), 085502 (6 pages) (2022).
  10. "Interface structures and electrical properties of micro-fabricated epitaxial Hf-digermanide/n-Ge(001) contacts", K. Kasahara, K. Senga, M. Sakashita, S. Shibayama, and O. Nakatsuka, IEEE J. Electron Dev. Soc. 10 pp. 744-750 (2022).
  11. "Investigation of Band Structure in Strained Single Crystalline Si1-XSnX", K. Sahara, R. Yokogawa, Y. Shibayama, Y. Hibino, M. Kurosawa, and A. Ogura, ECS Trans. 109 (4) pp. 359-366 (2022).
  12. "Superior power generation capacity of GeSn over Si demonstrated in cavity-free thermoelectric device architecture", M. M. H. Mahfuz, K. Katayama, Y. Ito, K. Fujimoto, M. Tomita, M. Kurosawa, T. Matsuki, and T. Watanabe, Jpn. J. Appl. Phys. 62 (SC) 1058 (6 pages) (2022).
  13. "極薄GeSiSn/GeSn/GeSiSn二重障壁構造の形成およびその電気的特性", 柴山茂久, Galih Ramadana Suwito, 中塚 理, 特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第27回）, pp. 187-190 (2021).
  14. "［招待講演］酸化膜/4H-SiC界面特性に基づくカウンタードープMOSFETの優位性", 柴山茂久, 土井拓馬, 坂下満男, 田岡紀之, 清水三聡, 中塚理, 信学技報 122 (84), pp. 1-4 (2022).
  15. "多層量子ドット構造実現に向けた絶縁体上へのGe1-xSnxナノドットの自己形成", 橋本薫, 柴山茂久, 安坂幸師, 中塚理, 信学技報 122 (84), pp. 5-8 (2022).

2021
  1. "Silicon-based low-dimensional materials for thermal conductivity suppression: recent advances and new strategies to high thermoelectric efficiency", H. Lai, Y. Peng, J. Gao, M. Kurosawa, O. Nakatsuka, T. Takeuchi, and L. Miao, Jpn. J. Appl. Phys. 60, SA0803 (15 pages) (2021).
  2. "Close-spaced evaporation of CaGe2 films for scalable GeH film formation", K. O. Hara, S. Kunieda, J. Yamanaka, K. Arimoto, M. Itoh, and M. Kurosawa, Mater. Sci. Semicond. Proc. 132, 105928 (6 pages) (2021).
  3. "No external load measurement strategy for micro thermoelectric generator based on high-performance Si1−x−yGexSny film", Y. Peng, S. Zhu, H. Lai, J. Gao, M. Kurosawa, O. Nakatsuka, S. Tanemura, B. Peng, L. Miao, J. Materiomics 7, 665-671 (2021).
  4. "Impact of Wet Annealing on Ferroelectric Phase Formation and Phase Transition of HfO2−ZrO2 System", S. Shibayama, J. Nagano, K. Asaka, M. Sakashita, and O. Nakatsuka, ACS Appl. Electron. Mater. 3, 2203-2211 (2021).
  5. "Formation and Characterization of Pseudomorphic Ge1−x−ySixSny/Ge Heterojunction Structures for Photovoltaic Application" O. Nakatsuka, S. Asaba, M. Kurosawa, M. Sakashita, N. Taoka, and S. Zaima, ECS Trans. 102 (4), 3-9 (2021).
  6. "Lowering of the Schottky barrier height of metal/n-type 4H-SiC contacts using low-work-function metals with thin insulator insertion", T. Doi, S. Shibayama, M. Sakashita, M. Shimizu, and O. Nakatsuka, Jpn. J. Appl. Phys. 60 (7), 075503 (6 pages) (2021).
  7. "Reinforcement of power factor in N-type multiphase thin film of Si1-x-yGexSny by mitigating the opposing behavior of Seebeck coefficient and electrical conductivity", H. Lai, Y. Peng, J. Gao, H. Song, M. Kurosawa, O. Nakatsuka, T. Takeuchi, and L. Miao, Appl. Phys. Lett. 119, 113903 (6 pages) (2021).
  8. "Influence of Reactive Ion Etching Time on Fabrication of Porous Silicon on Si (110) Substrates", R. Suryana, M. M. Mas'ud, and O. Nakatsuka, IOP Conf. Series: Mater. Sci. and Eng. 1096, 012139 (2021).
  9. "(Invited) Thermoelectric Properties of Tin-Incorporated Group-IV Thin Films", M. Kurosawa and O. Nakatsuka, ECS Trans. 104, 183 (2021).
  10. "HfO2-ZrO2系の強誘電相発現におけるウェット熱処理の効果", 柴山茂久, 永野丞太郎, 坂下満男, 中塚理, 特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第26回）, pp. 15-18 (2021).
  11. "低仕事関数金属/4H-SiC界面におけるMIGSの影響", 土井拓馬, 柴山茂久, 坂下満男, 清水三聡, 中塚理, 特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第26回）, pp. 75-78 (2021).

2020
  1. "Mobility enhancement by mechanical uniaxial stress on 4H-SiC (0001) lateral metal-oxide-semiconductor field-effect-transistor", W. Takeuchi, K. Kutsuki, E. Kagoshima, T. Onishi, S. Iwasaki, M. Sakashita, H. Fujiwara, and O. Nakatsuka, Jpn. J. Appl. Phys. 59, SGGD08 (7 pages) (2020).
  2. "Fermi-level pinning at metal/4H-SiC contact induced by SiCxOy interlayer", K. Hashimoto, T. Doi, S. Shibayama, and O. Nakatsuka, Jpn. J. Appl. Phys. 59, SGGD16 (6 pages) (2020).
  3. "Preparation and thermoelectric characterization of phosphorus-doped Si nanocrystals/silicon oxide multilayers", H. Kobayashi, R. Akaishi, S. Kato, M. Kurosawa, N. Usami, and Y Kurokawa, Jpn. J. Appl. Phys. 59, SGGF09 (6 pages) (2020).
  4. "Formation of ultrathin segregated-Ge crystal on Al/Ge(111) surface", M. Kobayashi, A. Ohta, M. Kurosawa, M. Araidai, N. Taoka, T. Simizu, M. Ikeda, K. Makihara, and S. Miyazaki, Jpn. J. Appl. Phys. 59, SGGK15 (6 pages) (2020).
  5. "Saturation of electrically activated Sb concentration in heavily Sb-doped n+-Ge1−xSnx epitaxial layers", J. Jeon, S. Shibayama, and O. Nakatsuka, Jpn. J. Appl. Phys. 59, SLLF02 (6 pages) (2020).
  6. "Ferroelectric phase formation for undoped ZrO2 thin films by wet O2 annealing", S. Shibayama, J. Nagano, M. Sakashita, and O. Nakatsuka, Jpn. J. Appl. Phys. 59, SMMA04 (5 pages) (2020).
  7. "Impact of byproducts formed on a 4H–SiC surface on interface state density of Al2O3/4H–SiC(0001) gate stacks", T. Doi, S. Shibayama, W. Takeuchi, M. Sakashita, N. Taoka, M. Shimizu, and O. Nakatsuka, Appl. Phys. Lett. 116, 222104 (5 pages) (2020).
  8. "Realizing high thermoelectric performance in p-type Si1-x-yGexSny thin films at ambient temperature by Sn modulation doping", Y. Peng, H. Lai, C. Liu, J. Gao, M. Kurosawa, O. Nakatsuka, T. Takeuchi, S. Zaima, S. Tanemura, and L. Miao, Appl. Phys. Lett. 117, 053903 (5 pages) (2020).
  9. "Hydrogen desorption from silicane and germanane crystals: Toward creation of freestanding monolayer silicene and germanene", M. Araidai , M. Itoh, M. Kurosawa , A. Ohta, and K. Shiraishi, J. Appl. Phys. 128, 125301 (5 pages) (2020).
  10. "(Invited) Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design", O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita, ECS Trans. 98, pp. 149-156 (2020).
  11. "Crystal Growth of Epitaxial 3C-SiC Thin Film on Si Substrate by Chemical Vapor Deposition using Single Precursor of Vinylsilane", T. Doi, K. Hashimoto, W. Takeuchi, and O. Nakatsuka, ECS Trans. 98, pp. 169-176 (2020).
  12. "Formation of ultra-thin Ge1−xSnx/Ge1−x−ySixSny quantum heterostructures and its electrical properties for realizing resonant tunneling diode", G. R. Suwito, M. Fukuda, E. Suprayoga, M. Ohtsuka, E. H. Hasdeo, A. R. T. Nugraha, M. Sakashita, S. Shibayama, and O. Nakatsuka, Appl. Phys. Lett. 117, 232104 (5 pages) (2020).
  13. "低温ウェット熱処理による強誘電性のアンドープZrO2薄膜の形成", 柴山茂久, 永野丞太郎, 坂下満男, 中塚理, 特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第25回）, pp. 5－8 (2020).
  14. "多結晶Si1-x-yGexSny三元混晶薄膜の熱電特性制御", 中塚理, 彭英, 苗蕾, 高杰, 刘呈燕, 黒澤昌志, 財満鎭明, 特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第25回）, pp. 117－120 (2020).
  15. "分子線エピタキシー法によるSi1-xSnx薄膜の形成", 丹下龍志, 黒澤昌志, 中塚理, 特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第25回）, pp. 125－128 (2020).
  16. "室温での極薄金属膜酸化法による基板酸化を抑制した良質なAl2O3/4H-SiC界面の実現", 土井拓馬, 柴山茂久, 竹内和歌奈, 坂下満男, 田岡紀之, 清水三聡, 中塚理, 特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第25回）, pp. 129－132 (2020).
  17. "低温プロセスによる金属/4H-SiCコンタクトのショットキー障壁高さ制御手法の検討", 柴山茂久, 橋本健太郎, 土井拓馬, 中塚理, 特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第25回）, pp. 133－136 (2020).
  18. "コンタクト抵抗率低減のための金属/IV族半導体界面制御技術", 中塚理, 柴山茂久, 坂下満男, 第84回半導体・集積回路技術シンポジウム講演予稿集, S12 (4 pages) (2020).

2019
  1. "Synthesis of heavily Ga-doped Si1−xSnx/Si heterostructures and their valence-band-offset determination", M. Kurosawa, Y. Inaishi, R. Tange, M. Sakashita, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 58, SAAD02 (4 pages) (2019).
  2. "Influence of Sn precursors on Ge1−xSnx growth using metal-organic chemical vapor deposition", Y. Miki, W. Takeuchi, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 58, SAAD07 (7 pages) (2019).
  3. "Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment", T. Doi, W. Takeuchi, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 58, SBBD05 (5 pages) (2019).
  4. "Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process", K. Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, and M. Kurosawa, Appl. Phys. Express. 12 (5), 051016 (5 pages) (2019).
  5. "Formation and Optoelectronic Property of Strain-relaxed Ge1−x–ySixSny/Ge1−xSnx/Ge1−x–ySixSny Double Heterostructures on Boron-Ion-Implanted Ge(001) Substrate", M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 58, SIIB23 (2019).
  6. "Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation", Y. Peng, L. Miao, J. Gao, C. Liu, M. Kurosawa, O. Nakatsuka, and S. Zaima, Sci. Rep. 9, 14342 (9 pages) (2019).
  7. "(Invited) Development of Germanium-Tin-Related Semiconductor Heterostructures for Energy Band Design in Electronic and Optoelectronic Applications", O. Nakatsuka, M. Fukuda, M. Sakashita, M. Kurosawa, S. Shibayama, and S. Zaima, ECS Trans. 92 (4), pp. 41-46 (2019).
  8. "Patterned Porous Silicon Prepared by Reactive Ion Etching Technique", R. Suryana, N. D. Pratiwi, M. Handayani, M. Santika, and O. Nakatsuka, IOP Conf. Ser.: Mater. Sci. Eng. 578 (1), 012019 (5 pages) (2019).
  9. "高Si組成Ge1−x–ySixSny/Ge1−xSnx/Ge1−x–ySixSny二重ヘテロ構造のエネルギーバンド構造および光電特性評価", 福田雅大, 坂下満男, 柴山茂久, 黒澤昌志, 中塚理, 財満鎭明, 特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」 （第24回）, pp. 71-74 (2019).
  10. "エピタキシャルHfGe2/Ge(001)界面の形成によるショットキー障壁高さ制御", 千賀一輝, 中塚理, 坂下満男, 柴山茂久, 財満鎭明, 特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」 （第24回）, pp. 101-104 (2019).
  11. "ポスト酸素ラジカル処理によるAl2O3/SiC界面のSi炭酸化物層の脱炭素化", 土井拓馬, 竹内和歌奈, 坂下満男, 柴山茂久, 田岡紀之, 中塚理, 財満鎭明, 特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」 （第24回）, pp. 213-216 (2019).
  12. "GaSb(001)基板上に形成したSi1-xSnx薄膜の結晶構造評価", 丹下龍志, 黒澤昌志, 中塚理, 財満鎭明, 特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」 （第24回）, pp. 265-268 (2019).
  13. "Ultra-low resistance contact for n-type Ge1−xSnx with by in-situ Sb heavily doping and nickel stanogermanide formation", J. Jeon, A. Suzuki, S. Shibayama, S. Zaima, and O. Nakatsuka, 信学技報 119 (96), pp. 5-9 (2019).
  14. "イオン注入法によるⅣ族半導体混晶薄膜の歪緩和促進機構について", 祖父江秀隆, 福田雅大, 柴山茂久, 財満鎭明, 中塚理, 信学技報 119 (96), pp. 17-20 (2019).
  15. "（解説）ゲルマニウムスズⅣ族混晶薄膜の結晶成長と電子物性", 中塚理, 黒澤昌志, 応用物理 88 (9), pp. 597-603 (2019).

（2018年度以前は当研究室の前身である財満研究室における業績を含みます。）

2018
  1. "Epitaxial growth of heavily doped n+-Ge layers using metal-organic chemical vapor deposition with in situ phosphorus doping", S. Ike, W. Takeuchi, O. Nakatsuka, and S. Zaima, Thin Solid films 645 (1), 57-63 (2018).
  2. "Selective growth of Ge1-xSnx epitaxial layer on patterned SiO2/Si substrate by metal-organic chemical vapor deposition", W. Takeuchi, T. Washizu, S. Ike, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 57 (1S), 01AC05 (5 pages) (2018).
  3. "Effect of N bonding structure in AlON deposited by plasma-assisted atomic layer deposition on electrical properties of 4H-SiC MOS capacitor", W. Takeuchi, K. Yamamoto, M. Sakashita, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 57 (1S), 01AE06 (6 pages) (2017).
  4. "Formation of SiC thin films by chemical vapor deposition with vinylsilane precursor", T. Doi, W. Takeuchi, Y. Jin, H. Kokubun, S. Yasuhara, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 57 (1S), 01AE08 (4 pages) (2018).
  5. "Improved thermoelectric property of B-doped Si/Ge multilayered quantum dot films prepared by RF magnetron sputtering", Y. Peng, L. Miao, C. Li, R. Huang, D. Urushihara, T. Asaka, O. Nakatsuka, and S. Tanemura, Jpn. J. Appl. Phys. 57 (1S), 01AF03 (5 pages) (2018).
  6. "High n-type Sb dopant activation in Ge-rich poly-Ge1−xSnx layers on SiO2 using pulsed laser annealing in flowing water", K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima, Appl. Phys. Lett. 112, 062104 (4 pages) (2018).
  7. "Dopant behavior in heavily doped polycrystalline Ge1−xSnx layers prepared with pulsed laser annealing in water", K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 57 (4S), 04FJ02 (6 pages) (2018).
  8. "Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched SixGe1−x−ySny ternary alloy interlayer on Ge", A. Suzuki, O. Nakatsuka, M. Sakashita, and S. Zaima, Jpn. J. Appl. Phys. 57 (6), 07MA05 (5 pages) (2018).
  9. "Formation of epitaxial Hf digermanide/Ge(001) contact and its crystalline properties", O. Nakatsuka, A. Suzuki, J. McVittie, Y. Nishi, and S. Zaima, Jpn. J. Appl. Phys. 57 (7S2), 060304 (4 pages) (2018).
  10. "Evaluation of Laterally Graded Silicon Germanium Wires for Thermoelectric Devices Fabricated by Rapid Melting Growth", R. Yokogawa, S. Hashimoto, K. Takahashi, S. Oba, M. Tomita, M. Kurosawa, T. Watanabe, and A. Ogura, ECS Trans. 86 (7), pp. 87-93 (2018).
  11. "(Invited) A New Application of Ge1−xSnx: Thermoelectric Materials", M. Kurosawa, Y. Imai, T. Iwahashi, K. Takahashi, M. Sakashita, O. ]Nakatsuka, and S. Zaima, ECS Trans. 86 (7), pp. 311-320 (2018).
  12. "Formation of ultra-low resistance contact with nickel stanogermanide/heavily doped n+-Ge1−xSnx structure", J. Jeon, A. Suzuki, O. Nakatsuka, and S. Zaima, Semicond. Sci. Technol. 33 (12), 124001 (2018).
  13. "Ultra-thin germanium-tin on insulator structure through direct bonding technique", T. Maeda, W. H. Chang, T. Irisawa, H. Ishii, H. Oka, M. Kurosawa, Y. Imai, O. Nakatsuka, and N. Uchida, Semicond. Sci. Technol. 33 (12), 124002 (6 pages) (2018).
  14. "Optoelectronic properties of high-Si-content-Ge1−x–ySixSny/Ge1−xSnx/Ge1−x–ySixSny double heterostructure", M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima, Semicond. Sci. Technol. 33 (12), 124018 (8 pages) (2018).
  15. "Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si", S. Gupta, Y. Shimura, O. Richard, B. Douhard, E. Simoen, H. Bender, O. Nakatsuka, S. Zaima, R. Loo, and M. Heyns, Appl. Phys. Lett. 113, 192103 (5 pages) (2018).
  16. "Growth and electrical properties of in situ Sb-doped Ge1−xSnx epitaxial layers for source/drain stressor of strained-Ge transistors", J. Jeon, A. Suzuki, K. Takahashi, O. Nakatsuka and S. Zaima, Jpn. J. Appl. Phys. 57 (12), 121303 (6 pages) (2018).
  17. "Impact of crystalline structures on the thermal stability and Schottky barrier height of NiGe/Ge contact", Y. Deng, D. He, Y. Qiu, R. Gu, J. He, and O. Nakatsuka, Appl. Phys. Lett. 113, 253503 (4 pages) (2018).
  18. "The morphological study of porous silicon formed by electrochemical anodization method", R. Suryana, D. K. Sandi, and O. Nakatsuka, IOP Conf. Ser.: Mater. Sci. Eng. 333, 012034 (4 pages) (2018).
  19. "Ge1-xSnxゲートスタック構造における欠陥の電気的評価", 金田裕一, 池進一, 兼松正行, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明, 特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」 （第23回）, pp. 75-78 (2018).
  20. "酸素ラジカル照射によるAl2O3/SiC MOS界面の改質効果", 土井拓馬, 竹内和歌奈, 坂下満男, 田岡紀之, 中塚理, 財満鎭明, 信学技報 118 (110), pp. 33-36 (2018).
2017
  1. "Solid phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of its crystalline and optical properties", S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 56 (1S), 01AB02 (7 pages) (2017).
  2. "Hydrogen-surfactant-mediated epitaxy of Ge1-xSnx layer and its effect on crystalline and photoluminescence properties", O. Nakatsuka, S. Fujinami, T. Asano, T. Koyama, M. Kurosawa, M. Sakashita, H. Kishida, and S. Zaima, Jpn. J. Appl. Phys. 56 (1S) 01AB05 (6 pages) (2017).
  3. "Evaluation of energy band offset of Si1-xSnx semiconductors by numerical calculation using density functional theory", Y. Nagae, M. Kurosawa, M. Araidai, O. Nakatsuka, K. Shiraishi, and S. Zaima, Jpn. J. Appl. Phys. 56 (4S), 04CR10 (5 pages) (2017).
  4. "Electrical and Optical Properties Improvement of GeSn Layers Formed at High Temperature under Well-controlled Sn Migration", N. Taoka, G. Capellini, V. Schlykow, M. Montanari, P. Zaumseil, O. Nakatsuka, S. Zaima, and T. Schroeder, Mater. Sci. Semicond. Proc. 57, pp. 48-53 (2017).
  5. "Selective epitaxial growth of Ge1-xSnx on Si by using metal-organic chemical vapor deposition", T. Washizu, S. Ike, Y. Inuzuka, W. Takeuchi, O. Nakatsuka, and S. Zaima, J. Crystal Growth 468, pp. 614-619 (2017).
  6. "Si1-xGex Bulk Single Crystals for Substrates of Electronic Devices", K. Kinoshita, Y. Arai, T. Maeda, and O. Nakatsuka, Mater. Sci. Semicond. Proc. 70 (1), pp. 12-16 (2017).
  7. "EXAFS study of local structure contributing to Sn stability in SiyGe1-y-zSnz", Y. Shimura, T. Asano, T. Yamaha, M. Fukuda, W. Takeuchi, O. Nakatsuka, and S. Zaima, Mater. Sci. Semicond. Proc. 70 (1), pp. 133-138 (2017).
  8. "Low-temperature crystallization of Ge-rich GeSn layers on Si3N4 substrate", I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima, Mater. Sci. Semicond. Proc. 70 (1), pp. 151-155 (2017).
  9. "Formation and characterization of Ge1-x-ySixSny/ Ge1-xSnx/Ge1-x-ySixSny double heterostructures with strain-controlled Ge1-x-ySixSny layers", M. Fukuda, T. Yamaha, T. Asano, S. Fujinami, Y. Shimura, M. Kurosawa, O. Nakatsuka, and S. Zaima, Mater. Sci. Semicond. Proc. 70 (1), pp. 156-161 (2017).
  10. "Modulation of Fermi level pining position at metal/n-Ge interface by semimetal Ge1-xSnx and Sn interlayers", A. Suzuki, M. Sakashita, O. Nakatsuka, and S. Zaima, Mater. Sci. Semicond. Proc. 70 (1), pp. 162-166 (2017).
  11. "Control of Ge1-x-ySixSny layer lattice constant for energy band alignment in Ge1-xSnx/Ge1-x-ySixSny heterostructures", M. Fukuda, K. Watanabe, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima, Semicond. Sci. Technol. 32 (10), 104008 (8 pages) (2017).
  12. "In situ phosphorus-doped Ge1-xSnx layers grown using low-temperature metal-organic chemical vapor deposition", S. Ike, W. Takeuchi, O. Nakatsuka, and S. Zaima, Semicond. Sci. Technol. 32 (12), 124001 (2017).
  13. "Growth and Applications of Si1-xSnx Thin Films", M. Kurosawa, O. Nakatsuka, and S. Zaima, ECS Trans. 80 (4), pp. 253-258 (2017).
  14. "Self-organized lattice-matched epitaxy of Si1-xSnx alloys on (001)-oriented Si, Ge, and InP substrates", M. Kurosawa, M. Kato, K. Takahshi, O. Nakatsuka, and S. Zaima, Appl. Phys. Lett. 111, 192106 (4 pages) (2017).
  15. "金属/Ge接合へのSixGe1-x-ySny 界面層導入がショットキー障壁高さに及ぼす効果", 鈴木陽洋, 戸田祥太, 中塚理, 坂下満男, 財満 鎭明, 特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」 （第22回）, pp. 63-66 (2017).
  16. "水中パルスレーザアニールを用いた多結晶Ge1-xSnx層中Sbの高活性化", 高橋恒太, 黒澤昌志, 池上浩, 坂下満男, 中塚理, 財満鎭明, 特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」 （第22回）, pp. 67-70 (2017).
  17. "4H-SiC MOSキャパシタのAlON絶縁膜のリーク電流特性に窒素結合状態が与える効果", 竹内和歌奈, 山本建策, 三村智博, 坂下満男, 中塚理, 財満鎭明, 特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」 （第22回）, pp. 127-130 (2017).
  18. "Ge1-xSnxゲートスタック構造における欠陥の物性評価", 金田裕一, 池進一, 兼松正行, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明, 信学技報 117 (101), pp. 39-42 (2017).
  19. "GeSn／Ge微細構造を用いた局所歪構造の作製とその分析", 中塚理, 日本学術振興会「結晶加工と評価技術」第145委員会第154回研究会「X線を用いた先端材料評価技術ウェーハ評価からナノスケールイメージングまで」報告書, 2017.
2016
  1. "Defect and dislocation structures in low-temperature-grown Ge and Ge1-xSnxepitaxial layers on Si(110) substrates", S. Kidowaki, T. Asano, Y. Shimura, M. Kurosawa, N. Taoka, O. Nakatsuka, and S. Zaima, Thin Solid Films 598, pp. 72-81 (2016).
  2. "Characterization of Shallow- and Deep-Level Defects of Undoped Ge1－xSnx Epitaxial Layers by Electrical Measurements", W. Takeuchi, T. Asano, Y. Inuzuka, M. Sakashita, O. Nakatsuka, and S. Zaima, ECS J. Solid State Sci. Tech. 5 (4), pp. P3082-P3086 (2016).
  3. "Low thermal budget n-type doping into Ge(001) surface using ultraviolet laser irradiation in phosphoric acid solution", K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima, Appl. Phys. Lett. 108, 052104 (4 pages) (2016).
  4. "Experimental observation of type-I energy band alignment in lattice matched Ge1-x-y SixSny/Ge heterostructures", T. Yamaha, S. Shibayama, T. Asano, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima, Appl. Phys. Lett. 108, 061909 (5 pages) (2016).
  5. "Growth of ultra-high Sn content Ge1-xSnx epitaxial layer and its impact on controlling Schottky barrier height at metal/Ge interface", A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima, Jpn. J. Appl. Phys.55 (4S) 04EB12 (6 pages) (2016).
  6. "Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1-xSnx epitaxial layer", J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 55 (4S), 04EB13 (5 pages) (2016).
  7. "Influence of Precursor Gas on SiGe Epitaxial Material Quality in Terms of Structural and Electrical Defects", S. Ike, E. Simoen, Y. Shimura, A. Hikavyy, W. Vandervorst, R. Loo, W. Takeuchi, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 55 (4S), 04EJ11 (5 pages) (2016).
  8. "Effect of Nitridation for SiO2/SiC Interface on Defects Properties near Conduction Band Edge", W. Takeuchi, K. Yamamoto, N. Taoka, M.Sakashita, T. Kanemura, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 55 (4S), 04ER13 (5 pages) (2016).
  9. "Characterization of crystallinity of Ge1-xSnx epitaxial layers grown using metal-organic chemical vapor deposition", Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, O. Nakatsuka, and S. Zaima, Thin Solid Films 602, pp. 7-12 (2016).
  10. "Crystalline Structure of TiC Ultra Thin Layers Formed on Highly Oriented Pyrolytic Graphite by Chemical Reaction from Ti/Graphite System", O. Nakatsuka, K. Hisada, S. Oida, A. Sakai, and S. Zaima, Jpn. J. Appl. Phys. 55 (6S3), 06JE02 (4 pages) (2016).
  11. [Spotlights] "Surface-segregated Si and Ge ultrathin films formed by Ag-induced layer exchange process", M. Kurosawa, A. Ohta, M. Araidai, and S. Zaima, Jpn. J. Appl. Phys. 55 (8S1), 08NB07 (5 pages) (2016).
  12. "Influence of GeO2 deposition temperature by in atomic layer deposition on electrical properties of Ge gate stack", M. Kanematsu, S. Shibayama, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 55 (8S2), 08PC05 (5 pages) (2016).
  13. "Density functional study for crystalline structures and electronic properties of Si1-xSnx binary alloys", Y. Nagae, M. Kurosawa, S. Shibayama, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi, and S. Zaima, Jpn. J. Appl. Phys. 55 (8S2), 08PE04 (4 pages) (2016).
  14. "Thermal stability and relaxation mechanisms in compressively strained Ge0.94Sn0.06 thin films grown by molecular beam epitaxy", C. Fleischmann, R. R. Lieten, P. Hermann, P. Honicke, B. Beckhoff, F. Seidel, O. Richard, H. Bender, Y. Shimura, S. Zaima, N. Uchida, K. Temst, W. Vandervorst, and A. Vantomme, J. Appl. Phys. 120, 085309 (11 pages) (2016).
  15. "Thermoelectric Properties of Ge-Rich GeSn Films Grown on Insulators", M. Kurosawa, K. Liu, M. Izawa, I. Tsunoda, and S. Zaima, ECS Trans. 75 (8) pp. 481-487 (2016).
  16. "Analysis of Microscopic Strain and Crystalline Structure in Ge/Ge1-xSnx Fine Structures by Using Synchrotron X-ray Microdiffraction", S. Ike, O. Nakatsuka, Y. Inuzuka, T. Washizu, W. Takeuchi, Y. Imai, S. Kimura, and S. Zaima, ECS Trans. 75 (8) pp. 769-775 (2016).
  17. "原子層堆積法を用いたGeO2/Ge界面形成および欠陥の堆積温度依存性", 兼松正行, 柴山茂久, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明, 特別研究会 「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第21回）, pp. 5-8 (2016).
  18. "Si1–xSnx半導体のエネルギーバンド構造に関する理論的および実験的分析", 長江祐樹, 柴山茂久, 黒澤昌志, 洗平昌晃, 中塚理, 白石賢二, 財満鎭明, 特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第21回）, pp. 17-20 (2016).
  19. "界面エネルギー制御に基づく絶縁膜上高移動度GeSn多結晶膜の形成", 吉川勲, 黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明, 特別研究会 「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」 （第21回）, pp. 21-24 (2016).
  20. "［招待講演］Sn系IV族半導体混晶薄膜の成長と物性評価", 志村洋介, 竹内和歌奈, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明, 信学技報 116 (1), pp. 23-26 (2016).
  21. "Ge基板上エピタキシャルGeSn膜の電気的活性な欠陥の評価", 金田裕一, 兼松正行, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明, 信学技報 116 (118), pp. 37-41 (2016).
  22. "金属誘起層交換法によるAg 上Si，Ge 極薄膜の形成―シリセン，ゲルマネンの創製を目指して―", 黒澤昌志, 大田晃生, 洗平昌晃, 財満鎭明, 表面科学 37 (8), pp. 374-379, 2016 (2016).

2015
  1. "Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation", N. Taoka, T. Asano, T. Yamaha, T. Terashima, O. Nakatsuka, I. Costina, P. Zaumseil, G. Capellini, S. Zaima, and T. Schroeder, Appl. Phys. Lett. 106, 061107 (5 pages) (2015).
  2. "Formation of chemically stable GeO2 on the Ge surface with pulsed metal–organic chemical vapor deposition", S. Shibayama, T. Yoshida, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, Appl. Phys. Lett. 106, 062107 (4 pages) (2015).
  3. "Epitaxial formation of Ni germanide on Ge(001) substrate by reactive deposition", Y. Deng, O. Nakatsuka, A. Suzuki, M. Sakashita, and S. Zaima, Solid State Electronics 110, pp. 44-48 (2015).
  4. "Epitaxial growth and crystalline properties of Ge1-x-ySixSny on Ge(001) substrates", T. Asano, T. Terashima, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, Solid State Electronics 110, pp. 49-53 (2015).
  5. "Effect of Sn on crystallinity and electronic property of low temperature grown polycrystalline-Si1-x-yGexSny layers on SiO2", T. Yamaha, M. Kurosawa, T. Ohmura, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, Solid State Electronics 110, pp. 54-58 (2015).
  6. "Formation, crystalline structure, and optical properties of Ge1-x-ySnxCy ternary alloy layers", T. Yamaha, K. Terasawa, H. Oda, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys 54 (4S), 04DH08 (6 pages) (2015).
  7. "Impact of Hydrogen Surfactant on Crystallinity of Ge1-xSnx Epitaxial Layers", T. Asano, N. Taoka, K. Hozaki, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys 54 (4S), 04DH15 (4 pages) (2015).
  8. "Influence of Interface Structure on Electrical Properties of NiGe/Ge Contacts", Y. Deng, O. Nakatsuka, M. Sakashita, and S. Zaima, Jpn. J. Appl. Phys. 54 (5S), 05EA01 (6 pages) (2015).
  9. "Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers", M. Kurosawa, M. Kato, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima, Appl. Phys. Lett. 106, 171908 (5 pages) (2015).
  10. "Characterization of locally strained Ge1-xSnx/Ge fine structures by synchrotron X-ray microdiffraction", S. Ike, O. Nakatsuka, Y. Moriyama, M. Kurosawa, N. Taoka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima, Appl. Phys. Lett. 106, 182104 (5 pages) (2015).
  11. "Epitaxial Ge1－xSnx layers grown by metal-organic chemical vapor deposition using Tertiary-butyl-germane and Tri-butyl-vinyl-tin", Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, ECS Solid State Lett. 4 (8), P1-P3 (2015).
  12. "High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization", W. Takeuchi, N. Taoka, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima, Appl. Phys. Lett. 107, 022103 (4 pages) (2015).
  13. "Growth of Si1-x-ySnxCy ternary alloy layer on Si(001) substrate and characterization of its crystalline property", T. Yamaha, M. Kurosawa, W. Takeuchi, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 54 (8S1), 08KA11 (2015).
  14. [Invited review][Open access] "Growth and applications of GeSn-related group-IV semiconductor materials", S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi, and M. Sakashita, Sci. Technol. Adv. Mater. 16, 043502 (22 pages) (2015).
  15. "Oxygen and germanium migration at low temperature influenced by the thermodynamic nature of the materials used in germanium metal-insulator-semiconductor structures", K. Kato, N. Taoka, M. Sakashita, O. Nakatsuka, and S. Zaima, Appl. Phys. Lett. 107, 102102 (5 pages) (2015).
  16. "Atom probe tomography study on Ge1-x-ySnxCy hetero-epitaxial film on Ge substrates", E. Kamiyama, K. Sueoka, K. Terasawa, T. Yamaha, O. Nakatsuka, S. Zaima, K. Izunome, K. Kashima, and H. Uchida, Thin Solid Films 592, pp. 54-58 (2015).
  17. [Invited]"Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits", S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, M. Sakashita, ECS Trans. 69 (10), pp. 89-98 (2015).
  18. "Reduction of Schottky barrier height at metal/n-Ge interface by introducing an ultra-high Sn content Ge1－xSnx interlayer", A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima, Appl. Phys. Lett. 107, 212103 (5 pages) (2015).
  19. "Mobility Behavior of Si1-x-yGexSny Polycrystals Grown on Insulators", T. Ohmura, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima, Trans. MRS-J 40 (4), pp. 351-354 (2015).
  20. [基調講演] "新しいIV族系半導体材料の開発と界面制御", 財満鎭明, 特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第20回研究会）, pp. 47-50 (2015).
  21. "Sn/Geコンタクトにおけるフェルミレベルピニングの軽減およびショットキー障壁高さの低減", 鈴木陽洋, 鄧云生, 柴山茂久, 黒澤昌志, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明, 特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第20回研究会）, pp. 59-62 (2015).
  22. "GeO2薄膜の正方晶形成による化学的安定性の向上", 柴山茂久, 吉田鉄兵, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明, 特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第20回研究会）, pp. 185-188 (2015).
  23. ［招待講演］ "エピタキシャル金属/ゲルマニウム接合の形成による界面電気伝導特性の制御", 中塚理, 鄧云生, 鈴木陽洋, 坂下満男, 田岡紀之, 財満鎭明, 信学技報 114 (469), pp. 17-22 (2015).
  24. ［招待講演］ "高Sn組成SiSnの形成とバンド構造　～ 直接遷移構造化を目指して ～", 黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明, 信学技報 115 (18), pp. 35-37 (2015).
  25. ［依頼講演］ "SiO2/SiC MOS界面の欠陥特性に酸窒化処理が与える影響", 竹内和歌奈, 山本建策, 坂下満男, 金村髙司, 中塚理, 財満鎭明, 信学技報 115 (108), pp. 27-30 (2015).
  26. "金属/Ge界面への超高Sn組成SnxGe1-x層導入による界面電 気伝導特性の制御", 鈴木陽洋, 柴山茂久, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明, 信学技報 115 (108), pp. 57-61 (2015).
  27. "Ge1-xSnxエピタキシャル層中の欠陥へ及ぼす熱処理の効果", 浅野孝典, 柴山茂久, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明, 信学技報 115 (108), pp. 63-68 (2015).

2014
  1. "Effect of Sn atoms on incorporation of vacancies in epitaxial Ge1-xSnx film grown at low temperature", E. Kamiyama, S. Nakagawa, K Sueoka, T. Ohmura, T. Asano, O. Nakatsuka, N. Taoka, S. Zaima, K. Izunome, and K. Kashima, Appl. Phys. Express 7 (2 , 021302 (3 pages) (2014).
  2. "Large grain growth of Ge-rich Ge1－x Snx (x ≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing water", M. Kurosawa, N. Taoka, H. Ikenoue, O. Nakatsuka, and S. Zaima, Appl. Phys. Lett. 104, 061901 (2014).
  3. "Band alignment at interfaces of amorphous Al2O3 with Ge1-xSnx and strained Ge-based channels", H.-Y. Chou, V. V. Afanas'ev, M. Houssa, A. Stesmans, B. Vincent, F. Gencarelli, Y. Shimura, C. Merckling, R. Loo, O. Nakatsuka, and S. Zaima, Appl. Phys. Lett. 104, 202107 (5 pages), (2014).
  4. "Epitaxial formation and electrical properties of Ni germanide/Ge(110) contacts", Y. S. Deng, O. Nakatsuka, J. Yokoi, N. Taoka, and S. Zaima, Thin Solid Films 557, pp. 84-89 (2014).
  5. "Characterization of Crystalline Structures of SiGe Substrate Formed by Traveling Liquidus-Zone Method for Devices with Ge/SiGe", T. Yamaha, O. Nakatsuka, N. Taoka, K. Kinoshita, S. Yoda, and S. Zaima,Thin Solid Films 557, pp. 129-134 (2014).
  6. "Influence of Ge Substrate Orientation on Crystalline Structures of Ge1-xSnx Epitaxial Layers", T. Asano, S. Kidowaki, M. Kurosawa, N. Taoka, O. Nakatsuka, and S. Zaima, Thin Solid Films 557, pp. 159–163 (2014).
  7. "Formation and characterization of locally strained Ge1-xSnx/Ge microstructures", S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima, Thin Solid Films 557, pp. 164–168 (2014).
  8. "Analysis for positions of Sn atoms in epitaxial Ge1-xSnx film in low temperature depositions", E. Kamiyama, K. Sueoka, O. Nakatsuka, N. Taoka, and S. Zaima, K. Izunome, K. Kashima, Thin Solid Films 557, pp. 173–176 (2014).
  9. "Importance of Control of Oxidant Partial Pressure on Structural and Electrical Properties of Pr-oxide Films", K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, Thin Solid Films 557 pp. 276–281 (2014).
  10. "Stabilized formation of tetragonal ZrO2 thin film with high permittivity", K. Kato, T. Saito, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, Thin Solid Films 557 pp. 192–196 (2014).
  11. "Impacts of AlGeO formation by post thermal oxidation of Al2O3/Ge structure on interfacial properties", S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, Thin Solid Films 557, pp. 282–287 (2014).
  12. "Defects Induced by Reactive Ion Etching in Ge Substrate", Kusumandari, N. Taoka, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima, Advanced Materials Research 896, pp. 241-244 (2014).
  13. "Reduction of Schottky barrier height for n-type Ge contact by using Sn electrode", A. Suzuki, S. Asaba, J. Yokoi, K. Kato, M. Kurosawa, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 53 (4S), 04EA06 (6 pages) (2014).
  14. "Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate", N. Taoka, M. Fukudome, W. Takeuchi, T. Arahira, M. Sakashita, O. Nakatsuka, and S. Zaima, J. Appl. Phys. 115, 173102 (7 pages) (2014).  
  15. "Formation of high-quality Ge1－xSnx layer on Ge(110) substrate with strain-induced confinement of stacking faults at Ge1-xSnx/Ge interfaces", T. Asano, N. Taoka, O. Nakatsuka and S. Zaima, Appl. Phys. Express 7 (6), 061301 (3 pages) (2014).
  16. "Effect of thermal cleaning on formation of epitaxial Ni germanide layer on Ge(110) substrate", Y. Deng, O. Nakatsuka, N. Taoka, and S. Zaima, Jpn. J. Appl. Phys. 53 (5S2), 05GA06 (6 pages) (2014).
  17. "Formation and crystalline structure of Ni silicides on Si(110) substrate", O. Nakatsuka, M. Hasegawa, K. Kato, N. Taoka, and S. Zaima, Jpn. J. Appl. Phys. 53 (5S2), 05GA12 (5 pages) (2014).
  18. "Observation of lattice spacing fluctuation and strain undulation around through-Si vias in wafer-on-wafer structures using X-ray microbeam diffraction", N. Taoka, O. Nakatsuka, Y. Mizushima, H. Kitada, Y. S. Kim, T. Nakamura, T. Ohba, and S. Zaima, Jpn. J. Appl. Phys. 53 (5S2), 05GE03 (6 pages) (2014).
  19. "Importance of Ge surface oxidation with high oxidation rate in obtaining low interface state density at oxide/Ge interfaces", S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 53 (8S1), 08LD02 (6 pages) (2014).
  20. "Interface properties of Al2O3/Ge structures with thin Ge oxide interfacial layer formed by pulsed metal organic chemical vapor deposition", T. Yoshida, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, W. Takeuchi, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 53 (8S1), 08LD03 (6 pages) (2014).
  21. "Robustness of Sn precipitation during thermal oxidation of Ge1-xSnx on Ge(001)", K. Kato, T. Asano, N. Taoka, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 53 (8S1), 08LD04 (8 pages) (2014).
  22. "Formation of high-quality oxide/Ge1-xSnx interface with high surface Sn content by controlling Sn migration", K. Kato, N. Taoka, T. Asano, T. Yoshida, M. Sakashita, O. Nakatsuka, and S. Zaima, Appl. Phys. Lett. 105, 122103 (5 pages) (2014).
  23. "Operation of inverter and ring oscillator of ultrathin-body poly-Ge CMOS", Y. Kamata, M. Koike, E. Kurosawa, M. Kurosawa, H. Ota, O. Nakatsuka, S. Zaima, and T. Tezuka, Appl. Phys. Express 7 (12), 121302 (4 pages) (2014).
  24. [Invited] "Challenges and Developments in GeSn Process Technology for Si Nanoelectronics", S. Zaima, O. Nakatsuka, N. Taoka, K. Kato, W. Takeuchi, and M. Sakashita, ECS Trans. 64 (6), 147-153 (2014).
  25. [Invited] "Epitaxial growth of GeSn layers on (001), (110), and (111) Si and Ge substrate", O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, W. Takeuchi, and S. Zaim, ECS Trans. 64 (6), 793-799 (2014).
  26. "低界面準位密度を有するGe MOS構造を実現するGe表面の酸化条件", 柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理,財満鎭明, 特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第19回研究会）, pp. 13-16 (2014).
  27. "固溶限を超えるSn組成を有するGe1-xSnx層中におけるSn原子の熱安定性", 加藤公彦, 浅野孝典, 田岡紀之, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明, 特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第19回研究会）, pp. 37-40 (2014).
  28. "MOCVD法により形成した極薄GeO2を用いた Al2O3/GeOx/Ge 構造の電気的特性および構造評価", 吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 田岡紀之, 竹内和歌奈, 中塚理, 財満鎭明, 特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第19回研究会）, pp. 131-134 (2014).
  29. "Al2O3/SiC MOS構造における伝導帯端近傍の電気特性", 田岡紀之, 坂下満男, 中塚理, 財満鎭明, 特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第19回研究会）, pp. 205-208 (2014).
  30. "n型Ge単結晶中におけるSnと空孔関連欠陥との相互作用", 竹内和歌奈, 田岡紀之, 坂下満男, 中塚理, 財満鎭明, 信学技報 114 (57), pp. 113-118 (2014).
  31. "Sn/Geコンタクトにおけるフェルミレベルピニング現象の軽減" , 鈴木陽洋, 朝羽俊介, 横井淳, 黒澤昌志, 加藤公彦, 坂下満男, 田岡紀之, 中塚理, 財満鎭明, 信学技報 114 (88), pp. 11-16 (2014).
  32. "Ge1-xSnxエピタキシャル成長における積層欠陥構造の制御", 浅野孝典, 田岡紀之, 中塚理, 財満鎭明, 信学技報 114 (88), pp. 21-25 (2014).
  33. ［依頼講演］ "絶縁膜上におけるIV族半導体多結晶薄膜の低温形成 ～ 低融点Snの活用 ～", 黒澤昌志, 田岡紀之, 池上浩, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明, 信学技報 114 (88), pp. 91-95 (2014).
  34. "（解説）多層セル型太陽電池用IV族多元系混晶の結晶成長と界面構造制御", 中塚理, 財満鎭明, 日本結晶成長学会誌 41 (2), pp. 74-80 (2014).

2013
  1. "Effects of Light Exposure during Plasma Processing on Electrical Properties of GeO2/Ge Structures", Kusumandari, W. Takeuchi, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 52, 01AC04 (6 pages) (2013) .
  2. "Influence of Sn Incorporation and Growth Temperature on Crystallinity of Ge1-xSnx Layers Heteroepitaxially Grown on Ge(110) Substrates", T. Asano, Y. Shimura, O. Nakatsuka, and S. Zaima, Thin Solid Films 531, pp. 504-508 (2013) .
  3. "Effect of Interfacial Reactions in Radical Process on Electrical Properties of Al2O3/Ge Gate Stack Structure", K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima, J. Phys.: Conf. Ser. 417, 012001 (6 pages) (2013).
  4. "Suppressive Effect of Interface Reaction and Water Absorption by Al Incorporation into Pr-oxide Film", W. Takeuchi, K. Furuta, K .Kato, M. Sakashita, H. Kondo, O. Nakatsuka, and S. Zaima, J. Phys.: Conf. Ser. 417, 012017 (6 pages) (2013).
  5. "Effect of gate metal on chemical bonding state in metal/Pr-oxide/Ge gate stack structure", K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, Solid-State Electron. 83, pp. 56-60 (2013).
  6. "Epitaxial growth and anisotropic strain relaxation of Ge1－xSnx layers on Ge(1 1 0) substrates", T. Asano, Y. Shimura, O. Nakatsuka, and S. Zaima, Solid-State Electron. 83, pp. 71-75 (2013).
  7. "Development of epitaxial growth technology for Ge1 －xSnx alloy and study of its properties for Ge nanoelectronics", O. Nakatsuka, Y. Shimura, W. Takeuchi, N. Taoka, and S. Zaima, Solid-State Electron. 83, pp. 82-86 (2013).
  8. "Interfacial Reaction Mechanism in Al2O3/Ge Structure by Oxygen Radical", K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 52, 04CA08 (7 pages) (2013).
  9. [Review][Free Article] "Technology Evolution for Silicon Nanoelectronics: Postscaling Technology", S. Zaima, Jpn. J. Appl. Phys. 52, 030001 (12 pages) (2013).
  10. "Broad defect depth distribution in germanium substrates induced by CF4 plasma", Kusumandari, N. Taoka, W. Takeuchi, M. Fukudome, M. Sakashita, O. Nakatsuka, and S. Zaima, Appl. Phys. Lett. 103, 033511 (2013).
  11. "Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al2O3/Ge structure",  S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, Appl. Phys. Lett. 103, 082114 (2013).
  12. "Liquid-Sn-driven lateral growth of poly-GeSn on insulator assisted by surface oxide layer", M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao, and S. Zaima, Appl. Phys. Lett. 103, 101904 (2013).
  13. [Invited] "Heteroepitaxial Growth of Sn-Related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications: Challenges and Opportunities", O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, M. Sakashita, and S. Zaima, ECS Trans. 58 (9), pp. 149-155 (2013).
  14. "Characterization of Local Strain Structures in Heteroepitaxial Ge1－xSnx/Ge Microstructures by Using Microdiffraction Method", S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima, ECS Trans. 58 (9), pp. 185-192 (2013).
  15. "Reduction of Interface States Density Due to Post Oxidation with Formation of AlGeO Layer at Al2O3/Ge Interface", S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, ECS Trans. 58 (9), pp. 301-308 (2013).
  16. "Doppler Broadening Spectroscopy of Positron Annihilation near Ge and Si (001) Single Crystal Surfaces", E. Kamiyama, K. Sueoka, K. Izunome, K. Kashima, O. Nakatsuka, N. Taoka, S. Zaima, and J. Vanhellemont, ECS Solid State Lett. 2 (10), P89-90 (2013).
  17. "Al2O3/Ge構造に対する熱酸化機構の解明", 柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明, 特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会）, pp. 39-42 (2013).
  18. "テ トラエトキシゲルマニウムを用いた極薄Ge酸化膜の形成", 吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明, 特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会）, pp. 151-154 (2013).
  19. "Pr 酸化膜/Ge構造におけるゲート金属が界面反応に与える影響", 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明, 特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会）, pp. 155-158 (2013).
  20. "酸化剤分圧およびSi拡散の制御によるPr酸化膜結晶構造制御", 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明, 信学技報 113 (87), pp. 1-6 (2013).
  21. "テトラエトキシゲルマニウムによる極薄GeO2膜の形成", 吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 田岡紀之, 竹内和歌奈, 中塚理, 財満鎭明, 信学技報 113 (87), pp. 7-11 (2013).
  22. "Al2O3/Ge構造における酸化機構の解明と界面反応がその特性に 及ぼす影響", 柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明, 信学技報 113 (87), pp. 13-18 (2013).

2012
  1. "Crystallinity Improvement of Epitaxial Ge Grown on a Ge(110) Substrate by Incorporation of Sn", Y. Shimura, T. Asano, O. Nakatsuka, and S. Zaima, Appl. Phys. Express 5, 015501 (3 pages) (2011).
  2. "Characterization of Damage of Al2O3/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation", Kusumandari, W.Takeuchi, K. Kato, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 51,  01AJ01 (5 pages) (2012).
  3. "Growth of Ge1-xSnx heteroepitaxial layers with very high Sn contents on InP(001) substrates", M. Nakamura, Y. Shimura, S. Takeuchi, O. Nakatsuka, and S. Zaima, Thin Solid Films 520 (8), pp. 3201-3205 (2012).
  4. "In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates", Y. Shimura, S. Takeuchi, O. Nakatsuka, B. Vincent, F. Gencarelli, T. Clarysse, W. Vandervorst, M. Caymax, R. Loo, A. Jensen, D.H. Petersen, and S. Zaima, Thin Solid Films 520 (8), pp. 3206-3210 (2012).
  5. "Homogeneous Si0.5Ge0.5 bulk crystal growth as substrates for strained Ge thin films by the traveling liquidus-zone method", K. Kinoshita, O. Nakatsuka, S. Yoda, and S. Zaima, Thin Solid Films 520 (8), pp. 3279-3282(2012).
  6. "Low temperature formation of Si1-x-yGexSny-on-insulator structures by using solid-phase mixing of Ge1-zSnz/Si-on-insulator substrates", O. Nakatsuka, K. Mochizuki, Y. Shimura, T. Yamaha, and S. Zaima, Thin Solid Films 520 (8), pp. 3288-3292 (2012).
  7. "Improvement of Al2O3/Ge interfacial properties by O2-annealing", S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima, Thin Solid Films 520 (8), pp. 3397-3401(2012).
  8. "Effect of atomic deuterium irradiation on initial growth of Sn and Ge1－xSnx on Ge(0 0 1) substrates", T. Shinoda, O. Nakatsuka, Y. Shimura, S. Takeuchi, and S. Zaima, Appl. Surf. Sci. 259 (15), pp. 754-757 (2012).
  9. "Silicon full wafer bonding with atomic layer deposited titanium dioxide and aluminum oxide intermediate films", R. L. Puurunena, T. Sunia, O. M. E. Ylivaara, H. Kondo, M. Ammar, T. Ishida, H. Fujita, A. Bosseboeuf, S. Zaima, H. Kattelus, Sensors and Actuators A: Physical 188, pp. 268-276 (2012).
  10. [Invited] "Growth and Optical Properties of Ge1-xSnx Alloy Thin Films with a High Sn Content", S. Zaima, O. Nakatsuka, M. Nakamura, W. Takeuchi, Y. Shimura, and N. Taoka, ECS Trans. 50 (9), pp. 897-902 (2012).
  11. "Growth and Characterization of Heteroepitaxial Layers of Ge1-x-ySixSny Ternary Alloy", T. Yamaha, O. Nakatsuka, S. Takeuchi, W. Takeuchi, N. Taoka, K. Araki, K. Izunome, and S. Zaima, ECS Trans. 50 (9), pp. 907-913 (2012).
  12. [総合報告] ポストスケーリング技術の現状と期待される新展開", 財満鎭明, 応用物理 81 (1), pp. 3-14 (2012).
  13. "Wafer-on-wafer構造における貫通Si電極周辺の局所歪の評価", 中塚理, 北田秀樹, 金永束, 水島賢子, 中村友二, 大場隆之, 財満鎭明, 信学技報 111 (463), pp. 47-52 (2012).
  14. "SiGe基板上へのひずみGeエピタキシャル層成長と結晶物性評価", 山羽隆, 中塚理, 木下恭一, 依田眞一, 財満鎭明, 信学技報 112 (32), pp.73-77 (2012).
  15. "Al2O3/Ge構造への酸素熱処理および酸素ラジカル処理による界面反応機構の解明", 柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明, 信学技報 112 (92), pp. 27-32 (2012).
  16. "ゲート電極の還元性がGe基板上Pr酸化膜のPr価数に与える影響", 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明, 信学技報 112 (92), pp. 37-42 (2012).
  17. "ラジカルプロセスによるAl2O3/Ge界面特性の改善", 加藤公彦, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明, 特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第17回研究会）, pp. 125-128 (2012).
  18. "Al2O3/Geに対する酸素熱処理が電気的特性 および化学結合状態に与える効果", 柴山 茂久, 加藤 公彦, 坂下 満男, 竹内 和歌奈, 中塚 理, 財満鎭明, 特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第17回研究会）, pp. 129-132 (2012).

2011
  1. "Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors", B. Vincent, Y. Shimura, S. Takeuchi, T. Nishimura, G. Eneman, A. Firrincieli, J. Demeulemeester, A. Vantomme, T. Clarysse, O. Nakatsuka, S. Zaima, J. Dekoster, M. Caymax, and R. Loo,Microelectron. Eng. 88 (4), pp. 342-346 (2011).
  2. "Crystalline orientation dependence of electrical properties of Mn Germanide/Ge(1 1 1) and (0 0 1) Schottky contacts", T. Nishimura, O. Nakatsuka, S. Akimoto, W. Takeuchi, and S. Zaima, Microelectron. Eng. 88 (5), pp. 605-609 (2011).
  3. "Formation of Ni(Ge1-xSnx) Layers with Solid-Phase Reaction in Ni/Ge1-xSnx/Ge Systems",  T. Nishimura, Y. Shimura, S. Takeuchi, B. Vincent, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, and S. Zaima, Solid-State Electronics 60 (1), pp. 46-52 (2011).
  4. "Ge1-xSnx stressors for strained-Ge CMOS", S. Takeuchi, Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, and S. Zaima, Solid-State Electronics 60 (1), pp. 53-57 (2011).
  5. "High-density formation of Ge quantum dots on SiO2", K. Makihara, M. Ikeda, A. Ohta, S. Takeuchi, Y. Shimura, S. Zaima, and S. Miyazaki, Solid-State Electronics 60 (1), pp. 60-65 (2011).
  6. "Control of Interfacial Properties of Pr-oxide/Ge Gate Stack Structure by Introduction of Nitrogen", K. Kato, H. Kondo, M. Sakashita, O. Nakatsuka, and S. Zaima, Solid-State Electronics 60 (1), pp. 70-74 (2011).
  7. "Control of Strain Relaxation Behavior of Ge1-xSnx Layers", Y. Shimura, S. Takeuchi, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, Solid-State Electronics 60 (1), pp. 84-88 (2011).
  8. "Effect of Pr Valence State on Interfacial Structure and Electrical Properties of Pr-oxide/PrON/Ge Gate Stack Structure", K. Kato, M. Sakashita, W. Takeuchi, H. Kondo, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 50, 04DA17 (7 pages) (2011).
  9. "Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy", M. Adachi, M. Sakashita, H. Kondo, W. Takeuchi, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 50, 04DA08 (4 pages) (2011).
  10. "Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer", C. Merckling, X. Sun, Y. Shimura, A. Franquet, B. Vincent, S. Takeuchi, W. Vandervorst, O. Nakatsuka, S. Zaima, R. Loo, and M. Caymax, Appl. Phys. Lett. 98, 192110 (3 pages) (2011).
  11. "Formation of Palladium Silicide Thin Layers on Si(110) Substrates", R. Suryana, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 50, 05EA09 (5 pages) (2011).
  12. "Characterization of Local Strain around Through-Silicon Via Interconnects by using X-ray Microdiffraction", O. Nakatsuka, H. Kitada, Y. S. Kim, Y. Mizushima, T. Nakamura, T. Ohba, and S. Zaima, Jpn. J. Appl. Phys. 50, 05ED03 (4 pages) (2011).
  13. "Structural Analysis of Si-Based Nanodot Arrays Self-Organized by Selective Etching of SiGe/Si Films", M. Takahashi, Y. Nakamura, J. Kikkawa, O. Nakatsuka, S. Zaima, and Akira Sakai , Jpn. J. Appl. Phys. 50 (8), 08LB11 (4 pages) (2011).
  14. "Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure using Radical Nitridation Technique", K. Kato, S. Kyogoku, M. Sakashita, W. Takeuchi, H. Kondo, S. Takeuchi, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys. 50 (10), 10PE02 (7 pages) (2011).
  15. [Invited] "GeSn Technology: Impact of Sn on Ge CMOS Applications", S. Zaima, O. Nakatsuka, Y. Shimura, S. Takeuchi, B. Vincent, F. Gencarelli, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, M. Caymax, and R. Loo, ECS Trans. 41 (7), pp. 231-238 (2011).
  16. "Sn diffusion during Ni germanide growth on Ge1-x Snx",  J. Demeulemeester, A. Schrauwen, O. Nakatsuka, S. Zaima, M. Adachi, Y. Shimura, C. M. Comrie, C. Fleischmann, C. Detavernier, K. Temst, and A. Vantomme, Appl. Phys. Lett.  99, 211905 (3 pages) (2011).
  17. "Pr酸化膜/Si構造へのAl導入による界面反応抑制効果", 古田和也, 竹内和歌奈, 加藤公彦, 坂下満男, 近藤博基, 中塚理, 財満鎭明, 特別研究会研究報告"ゲートスタック研究会 -材料・プロセス・評価の物理-"（第16回研究会）, pp. 51-54 (2011).
  18. "Al2O3界 面層およびラジカル窒化法によるHigh-k/Ge界面構造および電気的特性の制御", 加藤公彦, 京極真也, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明, 特別研究会研究報告"ゲートスタック研究会 -材料・プロセス・評価の物理-"（第16回研究会）, pp. 55-58 (2011).
  19. "Pr酸化膜/PrON/Ge構造におけるPrの化学結合状態が電気的特性に及ぼす影響", 加藤公彦, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明, 特別研究会研究報告"ゲートスタック研究会 -材料・プロセス・評価の物理-"（第16回研究会）, pp. 99-102 (2011).
  20. "電流検出型原子間力顕微鏡を 用いた欠陥に起因するPr酸化膜のリーク電流機構の解明", 足立正樹, 加藤雄三, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明, 特別研究会研究報告"ゲートスタック研究会 -材料・プロセス・評価の物理-"（第16回研究会）, pp. 123-126 (2011).

2010
  1. "Metal-organic chemical vapor deposition of high-dielectric-constant praseodymium oxide films using a cyclopentadienyl precursor", H. Kondo, S. Sakurai, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, Appl. Phys. Lett. 95, 012105 (2010).
  2. "Low temperature growth of Ge1-xSnx buffer layers for tensile–strained Ge layers", Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, Thin Solid Films 518 (6), pp. S2-S5 (2010).
  3. "Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology", N.D. Nguyen, E. Rosseel, S. Takeuchi, J.-L. Everaert, L. Yang, J. Goossens, A. Moussa, T. Clarysse, O. Richard, H. Bender, S. Zaima, A. Sakai, R. Loo, J.C. Lin, W. Vandervorst, M. Caymax, Thin Solid Films 518 (6), pp. S48-S52 (2010).
  4. "Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing", T. Kato, Y. Nakamura, J. Kikkawa, A. Sakai, E. Toyoda, K. Izunome, O. Nakatsuka, S. Zaima, Y. Imai, S. Kimura, O. Sakata, Thin Solid Films 518 (6), pp. S147-S150 (2010).
  5. "Formation Processes of Ge3N4 Films by Radical Nitridation and Their Electrical Properties", K. Kato, H. Kondo, M. Sakashita, and S. Zaima, Thin Solid Films 518 (6), pp. S226-S230 (2010).
  6. "Low-damage surface modification of polymethylmethacrylate with argon–oxygen mixture plasmas driven by multiple low-inductance antenna units", Y. Setsuhara, K. Cho, K. Takenaka, M. Shiratani, M. Sekine, M. Hori, E. Ikenaga, S. Zaima, Thin Solid Films 518 (13), pp. 3561-3565 (2010).
  7. "Formation of Pr Oxide Films by Atomic Layer Deposition Using Pr(EtCp)3 precursor", H. Kondo, H. Matsui, K. Furuta, M. Sakashita, and S. Zaima, Jpn. J. Appl. Phys. 49 (2010) 04DA14 (4 pages).
  8. "Crystalline Structures and Electrical Properties of High Nitrogen-Content Hf-Si-N Films", K. Miyamoto, H. Kondo, and S. Zaima, Jpn. J. Appl. Phys. 49 (2010) 04DA11 (5 pages).
  9. "Mobility Behavior of Ge1-xSnx Layers Grown on Silicon-on-Insulator Substrates", O. Nakatsuka, N. Tsutsui, Y. Shimura, S. Takeuchi, A. Sakai, and S. Zaima Jpn. J. Appl. Phys. 49 (2010) 04DA10 (4 pages).
  10. "Formation of Palladium Silicide on Heavily Doped Si(001) Substrates Using Ti Intermediate Layer", R. Suruyana, O. Nakatsuka, and S. Zaima Jpn. J. Appl. Phys. 49 (2010) 05FA09 (5 pages).
  11. [Invited] "Assessment of Ge1-xSnx Alloys for Strained Ge CMOS Devices", S. Takeuchi, Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, A. Sakai, and S. Zaima, ECS Trans. 33 (6), pp. 529-535 (2010).
  12. "Control of Strain Relaxation Behavior of Ge1-xSnx Layers for Tensile Strained Ge Layers", Y. Shimura, S. Takeuchi, O. Nakatsuka, and S. Zaima, ECS Trans. 33 (6), pp. 529-535 (2010).
  13. "1.2 nm-SiONゲート絶縁膜における局所劣化現象の電流検出型原子間力顕微鏡を用いたナノスケール観察", 加藤雄三, 平安座朝誠, 坂下満男, 近藤博基, 財満鎭明, 特別研究会研究報告"ゲートスタック研究会 -材料・プロセス・評価の物理-"（第15回研究会）, pp. 105-108 (2010).
  14. "ALD-Pr酸化膜/Ge3N4/Ge構造における界面構造と電気的特性", 加藤公彦, 近藤博基, 坂下満男, 財満鎭明, 特別研究会研究報告"ゲートスタック研究会 -材料・プロセス・評価の物理-"（第15回研究会）, pp. 121-124 (2010).
  15. "Pr(EtCp)3を 用いたPr酸化膜の原子層堆積とその結晶構造及び電気的特性", 古田和也, 松井裕高, 近藤博基, 坂下満男, 財満鎭明, 特別研究会研究報告"ゲートスタック研究会 -材料・プロセス・評価の物理-"（第15回研究会）, pp. 125-128 (2010).
  16. "ミクタミクト高窒素組成Hf-Si-Nの結晶構造および電気的特性", 宮本和明, 近藤博基, 財満鎭明, 特別研究会研究報告"ゲートスタック研究会 -材料・プロセス・評価の物理-"（第15回研究会）, pp. 173-176 (2010).

2009
  1. "Mechanical properties and chemical reactions at the directly bonded Si-Si interface", E. Toyoda, A. Sakai, T. Senda, H. Isogai, K. Izunome, O. Nakatsuka, M. Ogawa, S. Zaima, Jpn. J. Appl. Phys. 48, pp. 011202-1-5 (2009).
  2. "Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates", E. Toyoda, A. Sakai, H. Isogai, T. Senda, K. Izunome, K. Omote, O. Nakatsuka, S. Zaima, Jpn. J. Appl. Phys. 48, pp. 021208-1-4 (2009).
  3. "Thermal Stability and Scalability of Mictamict Ti-Si-N Metal-Oxide-Semiconductor Gate Electrodes", H. Kondo, K. Furumai, M. Sakashita, A. Sakai, and S. Zaima, Jpn. J. Appl. Phys. 48, pp. 04C012-1-5 (2009).
  4. "Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge1-xSnx Buffer Layers for Tensile-Strained Ge Layers", Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, Jpn. J. Appl. Phys. 48, pp. 04C130-1-4 (2009).
  5. "Effects of Atomic Layer Deposition-Al2O3 Interface Layers on Interfacial Properties of Ge Metal-Oxide-Semiconductor Capacitors", R. Kato, S. Kyogoku, M. Sakashita, H. Kondo, and S. Zaima, Jpn. J. Appl. Phys. 48, pp. 05DA04-1-4 (2009).
  6. "Nitrogen-Content Dependence of Crystalline Structures and Resistivity of Hf-Si-N Gate Electrodes for Metal-Oxide-Semiconductor Field-Effect Transistors", K. Miyamoto, K. Furumai, B. E. Urban, H. Kondo, and S. Zaima, Jpn. J. Appl. Phys. 48, pp. 045505-1-4 (2009).
  7. "Microstructures in directly bonded Si substrates", Y. Ohara, T. Ueda, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, S. Kimura, T. Sakata, H. Mori, Solid-State Electronics, 53 (8), pp. 837-840 (2009).
  8. "Plasma surface treatment of polymers with inductivity-coupled RF plasmas driven by low-inductance antenna units", Y. Setsuhara, K. Cho, K. Takenaka, A. Ebe, M. Shiratani, M. Sekine, M. Hori, E. Ikenaga, H. Kondo, O. Nakatsuka, S. Zaima, Thin Solid Films 518 (3), pp. 1006-1011 (2009).
  9. "Novel Method to Introduce Uniaxial Tensile Strain in Ge by Microfabrication of Ge/Si1-xGex Structures on Si(001) Substrates", T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, M. Ogawa, and S. Zaima, Solid-State Electronics 53 (11), pp. 1198-1201 (2009).
  10. "Technology Evolution of Silicon Nano-Electronics", S. Zaima, ECS Trans. 25 (7), pp. 33-47 (2009).
  11. "Control of Dislocations and Sn Precipitations for Fabrication of Tensile-strained Ge on Ge1-x Snx Buffer Layer", Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, Trans. MRS-J, 34 (2), 301-304 (2009).
  12. "Formation of Uniaxial Tensile-strained Ge by Using Micro-patterning of Ge/Si1-xGe x/Si Structures", T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, and S. Zaima, Trans. MRS-J, 34 (2), 305-308 (2009).
  13. "アモルファスTi-Si-N MOSゲート電極の熱的安定性およびスケーラビリティ", 宮本和明，古米孝平，近藤博基，坂下満男，財満鎭明, 特別研究会研究報告"ゲートスタック研究会 -材料・プロセス・評価の物理-"（第14回研究会）, pp. 89-92 (2009).
  14. "Pr(EtCp)3を用いたMOCVD法による Pr酸化膜の作製およびその電気的特性の評価", 松井裕高，櫻井晋也，近藤博基，坂下満男，財満鎭明, 特別研究会研究報告"ゲートスタック研究会 -材料・プロセス・評価の物理-"（第14回研究会）, pp. 125-128 (2009).
  15. "Al2O3界面層挿入によるLaAlO3/Ge 界面制御効果", 加藤亮祐，京極真也，坂下満男，近藤博基，財満鎭明, 特別研究会研究報告"ゲートスタック研究会 -材料・プロセス・評価の物理-"（第14回研究会）, pp. 133-136 (2009).
  16. "ラジカル窒化法によるGe3N4/Ge構造の形成過程", 加藤公彦，小田繁尚，近藤博基，財満鎭明, 特別研究会研究報告"ゲートスタック研究会 -材料・プロセス・評価の物理-"（第14回研究会）, pp. 163-166 (2009).
  17. "アモルファスTi-Si-NおよびHf-Si-N MOSゲート電極の結晶構造と抵抗率の窒素濃度依存性", 近藤博基，宮本和明，古米孝平，坂下満男，財満鎭明, 特別研究会研究報告"ゲートスタック研究会 -材料・プロセス・評価の物理-"（第14回研究会）, pp. 191-194 (2009).
  18. "ラジカル窒化法によるHigh-k/Ge界面構造制御", 加藤公彦, 近藤博基, 坂下満男, 財満鎭明, Technical report of IEICE (信学技報) 109 (87), pp. 39-44, (2009).
  19. "LaAlO/Ge構造へのALD-Al2O3界面制御層挿入の効果", 坂下満男, 加藤亮祐, 京極真也, 近藤博基, 財満鎭明, Technical report of IEICE (信学技報) 109 (87), pp. 61-66, (2009).
  20. "Pt(EtCp)3を用い た原子層堆積法による Pr酸化膜の形成", 近藤博基, 古田和也, 松井裕高, 坂下満男, 財満鎭明, Technical report of IEICE (信学技報) 109 (87), pp. 81-85, (2009).

2008
  1. "Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi2/Si Schottky Contacts Formed from Ni/Ti/Si System", O. Nakatsuka, A. Suzuki, S. Akimoto, A. Sakai, M. Ogawa and S. Zaima, Jpn. J. Appl. Phys. 47 (4), pp. 2402-2406 (2008).
  2. "Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors", K. Furumai, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, Jpn. J. Appl. Phys. 47 (4), pp. 2420-2424 (2008).
  3. "Scanning Tunneling Microscopy Observation of Initial Growth of Sn and Ge1-xSnx Layers on Ge(001) Substrates", M. Yamazaki, S. Takeuchi, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima, Appl. Surf. Sci. 254 (19), 6048-6051 (2008).
  4. "Growth of highly strain-relaxed Ge1-xSnx /virtual Ge by a Sn precipitation controlled compositionally step-graded method", S. Takeuchi, Y. Shimura, O. Nakatsuka, S. Zaima, M. Ogawa, and A. Sakai, Appl. Phys. Lett. 92, 231916 (2008).
  5. "Physical origin of suppressed effective work function modulation at boron segregated NiSi/SiON interface", Y. Tsuchiya, M. Yoshik, K. Sekine, T. Saito, K. Nakajima, T. Aoyama, J. Koga, A. Nishiyama, M. Koyama, M. Ogawa, and S. Zaima, J. Appl. Phys. 103, 124503 (2008).
  6. "Effect of alcohol sources on synthesis of single-walled carbon nanotubes", S. Oida, A. Sakai, O. Nakatsuka, M. Ogawa and S. Zaima, Appl. Surf. Sci., 254 (23) 7697-7702 (2008).
  7. "Epitaxial Ag Layers on Si Substrates as a Buffer Layer for Carbon Nanotube Growth", S. Oida, A. Sakai, O. Nakatsuka, M. Ogawa and S. Zaima, Jpn. J. Appl. Phys. 47 pp. 3742-3747 (2008).
  8. "Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO2 Systems", Y. Tsuchiya, M. Yoshiki, J. Koga, A. Nishiyama, M. Koyama, M. Ogawa, and S. Zaima, Jpn. J. Appl. Phys. 47 pp. 8321-8327 (2008).
  9. "Silicide and germanide technology for contacts and gates in MOSFET applications", S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, and M. Ogawa, Thin Solid Films 517 (1) pp. 80-83 (2008).
  10. "Tensile strained Ge layers on strain-relaxed Ge1 －xSnx/virtual Ge substrates", S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima, Thin Solid Films 517 (1) pp. 159-162 (2008).
  11. "Formation of high-density Si nanodots by agglomeration of ultra-thin amorphous Si films", H.Kondo, T. Ueyama, E. Ikenaga, K. Kobayashi, A. Sakai, M. Ogawa, and S. Zaima, Thin Solid Films 517 (1) pp. 297-299 (2008).
  12. "Characterization of bonding structures of directly bonded hybrid crystal orientation substrates", E. Toyoda, A. Sakai, O. Nakatsuka, H. Isogai, T. Senda, K. Izunome, M. Ogawa, and S. Zaima, Thin Solid Films, 517 (1), pp. 323-326 (2008).
  13. "Interface and Defect Control for Group IV Channel Engineering", A. Sakai, Y. Ohara, T. Ueda, E. Toyoda, K. Izunome, S. Takeuchi, Y. Shimura, O. Nakatsuka, M. Ogawa, S. Zaima, and S. Kimura, ECS Trans. 16 (10), pp. 687-698 (2008).
  14. "Formation of Ge3N4/Ge Structures Using Nitrogen Radicals and Their Thermal Stability", H. Kondo, S. Oda, M. Ogawa, and S. Zaima, ECS Trans. 16 (10), pp. 717-721 (2008).
  15. "窒素ラジカル暴露によるGe(001)表面処理", 近藤博基, 藤田美里, 酒井朗, 小川正毅, 財満鎭明, 特別研究会研究報告"ゲートスタック研究会 -材料・プロセス・評価の物理-"（第13回研究会）, pp. 113-118 (2008).
  16. "Ge基板上に作製したPr酸化膜の評価", 坂下満男, 鬼頭伸幸, 加藤亮祐, 近藤博基, 中塚理, 酒井朗, 小川正毅, 財満鎭明, 特別研究会研究報告"ゲートスタック研究会 -材料・プロセス・評価の物理-"（第13回研究会）, pp. 237-242 (2008).
  17. "ミクタミクトTiSiNゲートMOSキャパシタの結晶構造及び電気的特性の評価", 古米孝平, 近藤博基, 坂下満男, 酒井朗, 小川正毅, 財満鎭明, 特別研究会研究報告"ゲートスタック研究会 -材料・プロセス・評価の物理-"（第13回研究会）, pp. 267-272 (2008).

2007
  1. "Strain relaxation of patterned Ge and SiGe layers on Si(001) substrates", S. Mochizuki, A. Sakai, O. Nakatsuka, H. Kondo, K. Yukawa, K. Izunome, T. Senda, E. Toyoda, M. Ogawa, and S. Zaima, Semicond. Sci. Tech. 22 (1), pp. S132-S136 (2007).
  2. "Growth and structure evaluation of strain-relaxed Ge1-xSnx buffer layers grown on various types of substrates", S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, and S. Zaima, Semicond. Sci. Tech. 22 (1), pp. S231-S235 (2007).
  3. "Growth and Energy Bandgap Formation of Silicon Nitride Films in Radical Nitridation", H. Kondo, K. Kawaai, A. Sakai, M. Hori, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 46 (1), pp. 71-75 (2007).
  4. "Composition Dependence of Work Function in Metal (Ni,Pt) Germanide Gate Electrodes", D. Ikeno, Y. Kaneko, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, Jpn. J. Appl. Phys. 46 (4B), pp. 1865-1869 (2007).
  5. "Behavior of Local Charge Trapping Sites in La2O3-Al2O3 Composite Films under Constant Voltage Stress", T. Sago, A. Seko, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, Jpn. J. Appl. Phys. 46 (4B), pp. 1879-1884 (2007).
  6. "Physical mechanism of effective work function modulation caused by impurity segregation at Ni silicide/SiO2 interfaces", Y. Tsuchiya, M. Yoshiki, A. Kinoshita, M. Koyama, J. Koga, M. Ogawa, and S. Zaima, J. Appl. Phys. 102, pp. 104504-1-7 (2007).
  7. "Ge(001)表面の酸素エッチングおよび初期酸化過程の原子スケール評価", 山崎理弘, 若園恭伸, 酒井朗, 中塚理, 竹内正太郎, 小川正毅, 財満鎭明, 特別研究会研究報告"ゲートスタック研究会 -材料・プロセス・評価の物理-"（第12回研究会）, pp. 197-202 (2007).
  8. "パルスレーザー蒸着法によるGe基板上へのPr酸化膜の作製とその構造及び電気的特性評価", 鬼頭伸幸, 坂下満男, 酒井朗, 中塚理, 近藤博基, 小川正毅, 財満鎭明, 特別研究会研究報告"ゲートスタック研究会 -材料・プロセス・評価の物理-"（第12回研究会）, pp. 251-256 (2007).
  9. "Pt-germanideゲート電極の結晶構造及び電気的特性の評価" , 池野大輔, 古米孝平, 近藤博基, 坂下満男, 酒井朗, 小川正毅, 財満鎭明, 特別研究会研究報告"ゲートスタック研究会-材料・プロセス・評価の物理-"（第12回研究会）, pp. 277-282 (2007).
  10. "シリコン表面の窒化初期過程とエネルギーバンドキャップの形成", 近藤博基, 財満鎭明, 堀勝, 酒井朗, 小川正毅, 真空 50 (11), pp. 665-671 (2007）.

2006
  1. "Initial Growth Process of TiN Films in Ultrahigh-Vacuum Rapid Thermal Chemical Vapor Deposition", Y. Okuda, S. Naito, O. Nakatsuka, H. Kondo, T. Okuhara, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 45 (1A), pp. 49-53 (2006).
  2. "Local strain in SiGe/Si heterostructures analyzed by X-ray microdiffraction", S. Mochizuki, A. Sakai, N. Taoka, O. Nakatsuka, S. Takeda, S. Kimura, M. Ogawa, and S. Zaima, Thin Solid Films 508 (1-2), pp. 128-131 (2006).
  3. "Control of misfit dislocations in strain-relaxed SiGe buffer layers on SOI substrates", N. Taoka, A. Sakai, S. Mochizuki, O. Nakatsuka, M. Ogawa and S. Zaima, Thin Solid Films 508 (1-2), pp. 147-151 (2006).
  4. "Film Structures and Electrical Properties of Pr Silicate Formed by Pulsed Laser Deposition", K. Ariyoshi, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, Jpn. J. Appl. Phys. 45 (4B), pp. 2903-2907 (2006).
  5. "Characterization of Local Current Leakage in La2O3-Al2O3 Composite Films by Conductive Atomic Force Microscopy", A. Seko, T. Sago, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, Jpn. J. Appl. Phys. 45 (4B), pp. 2954-2960 (2006).
  6. "Electrical properties of epitaxial NiSi2/Si contacts with extremely flat interface formed in Ni/Ti/Si(0 0 1) system", O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, and S. Zaima, Microelectron. Eng. 83 (11-12), pp. 2272-2276 (2006).
  7. "Epitaxial growth of (1 1 1)ZrN thin films on (1 1 1)Si substrate by reactive sputtering and their surface morphologies", H. Yanagisawa, S. Shinkai, K. Sasaki, J. Sakurai, Y. Abe, A. Sakai and S. Zaima, J. Crystal Grwoth 297 (1), pp. 80-86 (2006).
  8. "Ni-Silicide/Si and SiGe(C) Contact Technology for ULSI Applications", O. Nakastuka, S. Zaima, A. Sakai, and M. Ogawa, in Proc.of the 14th annual IEEE International Conference on Advanced Thermal Processing of Semiconductors, pp. 31-37 (2006).
  9. "次世代シリコンULSIに向けたIV族系半導体ヘテロ界面のひずみと転位の制御技術と評価", 酒井朗, 財満鎭明, 応用物理 75 (4), pp. 426-434 (2006).
  10. "La2O3-Al2O3複合膜における定電圧 ストレス印加時の局所的な電荷捕獲とその放出過程", 佐合寿文, 世古明義, 坂下満男, 酒井朗, 小川正毅, 財満鎭明, Technical report of IEICE (信学技報) 106 (108) p. 19 (2006).
  11. "-展望-　電流検出型原子間力顕微鏡を用いた極薄ゲート絶縁膜の信頼性評価", 世古明義, 坂下満男, 酒井朗, 財満鎭明, 日本信頼性学会誌「信頼性」28 (3),  pp. 163-174, (2006).
  12. "La2O3-Al2O3複合膜中の局所電流 リークの起源と酸素熱処理の効果", 世古明義, 佐合寿文, 坂下満男, 酒井朗, 小川正毅, 財満鎭明, 応用物理学会 薄膜・表面物理分科会/シリコンテクノロジー分科会共催特別研究会研究報告 ゲートスタック研究会 ‐材料・プロセス・評価の物理‐(第11回研究会), pp.389-395, (2006).
  13. "Conductive-AFMによるゲート絶縁膜劣化現象のナノスケール評価", 財満鎭明, 世古明義, 渡辺行彦, 坂下満男, 酒井朗, 小川正毅, 半導体・集積回路技術　第70回シンポジウム　講演論文集 (2006).

2005
  1. "Epitaxial Growth of (001)ZrN Thin Films on (001)Si by Low Temperature Process", H. Yanagisawa, S. Shinkai, K. Sasaki, Y. Abe, A. Sakai, and S. Zaima, Jpn. J. Appl. Phys. 44 (1A), pp. 343-349 (2005).
  2. "Synthesis of carbon nanotube peabods directly on Si substrates", Y. Ohno, Y. Kurokawa, S. Kishimoto, T. Mizutani, T. Shimada, M. Ishida, T. Okazaki, H. Shinohara, Y. Murakami, S. Maruyama, A. Sakai, and K. Hiraga, Appl. Phys. Lett. 86, pp. 23109-23111 (2005).
  3. "Initial growth behaviors of SiGeC in SiGe and C alternate deposition", S. Takeuchi, O. Nakatsuka, Y. Wakazono, A. Sakai, S. Zaima, and Y. Yasuda, Mater. Sci. Semicond. Proc. 8 (1-3), pp. 5-9 (2005).
  4. "Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations", N. Taoka, A. Sakai, T. Egawa, O. Nakatsuka, S. Zaima, and Y. Yasuda, Mater. Sci. Semicond. Proc. 8 (1-3), pp. 131-135 (2005).
  5. "Thermal Stability and Electrical Properties of (La2O3)1-x(Al2O3)x Composite Films", R. Fujitsuka, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 44 (4B), pp. 2428-2432 (2005).
  6. "Low-Temperature Formation of Epitaxial NiSi2 Layers with Solid-Phase Reaction in Ni/Ti/Si(001) Systems", O. Nakatsuka, K. Okubo, Y. Tsuchiya, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 44 (5A), pp. 2945-2947 (2005).
  7. "Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems", A. Sakai, N. Taoka, O. Nakatsuka, S. Zaima, and Yukio Yasuda, Appl. Phys. Lett. 86, pp. 221916-221918 (2005).
  8. "Analysis of Stressed-Gate SiO2 Films with Electron Injection by Conductive Atomic Force Microscopy", A. Seko, Y. Watanabe, H. Kondo, A. Sakai, S. Zaima, and Y. Yasuda, Electronics and Communications in Japan, Part 2, 88 (6) pp. 18-26 (2005).
  9. "Fabrication and Evaluation of Floating Gate Memories with Surface-Nitrided Si Nanocrystals", S. Naito, T. Ueyama, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, Jpn. J. Appl. Phys. 44 (7B), pp. 5687-5691 (2005).
  10. "Fabrication technology of SiGe hetero-structures and their properties", Y. Shiraki and A. Sakai, Surface Science Reports 59 (7-8), pp. 153-207 (2005).
  11. "Analysis of microstructures in SiGe buffer layers on silicon-on-insulator substrates", N. Taoka, A. Sakai, S. Mochizuki, O. Nakatsuka, M. Ogawa, S. Zaima, T. Tezuka, N. Sugiyama, and S. Takagi, Jpn. J. Appl. Phys. 44 (10), pp. 7356-7363 (2005).
  12. "Analysis of Local Breakdown Process in Stressed Gate SiO2 Films by Conductive Atomic Force Microscopy", A. Seko, Y. Watanabe, H. Kondo, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 44 (10), pp. 7582-7587 (2005).
  13. "Improvement in NiSi/Si contact properties with C-implantation", O. Nakatsuka, K. Okubo, A. Sakai, M. Ogawa, Y. Yasuda, and S. Zaima, Microelectron. Eng. 82 (3-4), pp. 479-484 (2005).
  14. "Thermal stability and electrical properties of Ni-silicide on C-incorporated Si", O. Nakatsuka, K. Okubo, A. Sakai, M. Ogawa, S. Zaima, J. Murota, and Y. Yasuda, in Advanced Metallization Conference 2004 (AMC2004), (Editors: D. Erb, P. Ramm, K. Masu, and A.Osaki), pp. 293-298 (2005).
  15. "電流検出型原子間力顕微鏡を用いたLa2O3-Al2O3複 合膜の局所リーク電流評価", 世古明義, 佐合寿文, 藤塚良太, 坂下満男, 酒井朗, 小川正毅, 財満鎭明, Technical report of IEICE (信学技報) 104 (109) p. 35 (2005).
  16. "SiGeバッファ層の歪緩和および転位構造制御", 田岡紀之, 酒井朗, 望月省吾, 中塚理, 小川正毅, 財満鎭明, 日本結晶成長学会誌 32, pp. 89-98 (2005).

2004
  1. "Growth of Carbon Nanotubes by Microwave-excited Non-Equilibrium Atmospheric-Pressure Plasma", A. Matsushita, M. Nagai, K. Yamakawa, M. Hiramatsu, A. Sakai, M. Hori, T. Goto, and S. Zaima, Jpn. J. Appl. Phys. 43 (1), pp. 424-425 (2004).
  2. "Microscopic Analysis of Stress-Induced Leakage Current in Stressed Gate SiO2 Films Using Conductive Atomic Force Microscopy" Y. Watanabe, A. Seko, H. Kondo, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 43 (2A), pp. L144-L147 (2004).
  3. "Interfacial reaction and electrical properties in Ni/Si and Ni/SiGe(C) contacts", S. Zaima, O. Nakatsuka, A. Sakai, J. Murota, and Y. Yasuda, Appl. Surf. Sci. 224 (1-4), pp. 215-221 (2004).
  4. "Influence of Si1-xGex interlayer on the initial growth of SiGeC on Si(100)", S. Ariyoshi, S. Takeuchi, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda, Appl. Surf. Sci. 224 (1-4), pp. 117-121 (2004).
  5. "Dislocation structures and strain-relaxation in SiGe buffer layers on Si (0 0 1) substrates with an ultra-thin Ge interlayer", T. Yamamoto, A. Sakai, T. Egawa, N. Taoka, O. Nakatsuka, S. Zaima, and Y. Yasuda, Appl. Surf. Sci. 224 (1-4), pp. 108-112 (2004).
  6. "Strain-relaxation mechanisms of SiGe layers formed by two-step growth on Si(0 0 1) substrates", T. Egawa, A. Sakai, T. Yamamoto, N. Taoka, O. Nakatsuka, S. Zaima and Y. Yasuda, Appl. Surf. Sci. 224 (1-4), pp. 104-107 (2004).
  7. "Pulsed Laser Deposition and Analysis for Structural and Electrical Properties of HfO2-TiO2 Composite Films", K. Honda, A. Sakai, M. Sakashita, H. Ikeda, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 43 (4A), pp. 1571-1576 (2004).
  8. "Conductive Atomic Force Microscopy Analysis for Local Electrical Characteristics in Stressed SiO2 Gate Films", Y. Watanabe, A. Seko, H. Kondo, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 43 (4B), pp. 1843-1847 (2004).
  9. "Influence of structural variation of Ni silicide thin films on electrical property for contact materials", K. Okubo, Y. Tsuchiya, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 43 (4B), pp. 1896-1900 (2004).
  10. "Influence of C incorporation on the initial growth of epitaxial NiSi2 on Si(100)", E. Okada, O. Nakatsuka, S. Oida, A. Sakai, S. Zaima, and Y. Yasuda, Appl. Surf. Sci. 237 (1-4), pp. 150-155 (2004).
  11. "Growth of silicon nanocrystal dots with high number density by ultra-high vacuum chemical vapor deposition", S. Naito, M. Satake, H. Kondo, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 43 (6B) pp. 3779-3783 (2004).
  12. "Detection and Characterization of Stress-Induced Defects in Gate SiO2 Films by Conductive Atomic Force Microscopy", Y. Watanabe, A. Seko, H. Kondo, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 43 (7B), pp. 4679-4682 (2004).
  13. "Behavior of Local Current Leakage in Stressed Gate SiO2 Films Analyzed by Conductive Atomic Force Microscopy", A. Seko, Y. Watanabe, H. Kondo, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 43 (7B), pp. 4683-4686 (2004).
  14. "Effects of Nitrogen Addition to Microwave Oxygen Plasma in Surface Wave with Disk-Plate Window and Photoresist Ashing", K. Shinagawa, J. Yamamoto, S. Ohgawara, S. Zaima, and M. Furukawa, Jpn. J. Appl. Phys. 43 (10), pp. 6858-6862 (2004).
  15. "HfO2 Film Formation Combined with Radical Nitridation and Its Electrical Characteristic", R. Takahashi, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 43 (11B), pp. 7821-7825 (2004).
  16. "Praseodymium silicate formed by postdeposition high-temperature annealing", A. Sakai, S. Sakashita, M. Sakashita, Y. Yasuda, S. Zaima, and S. Miyazaki, Appl. Phys. Lett. 85 (22), pp. 5322-5324 (2004).
  17. "Control of Ni/Si interfacial reaction and NiSi technology for ULSI applications", S. Zaima, O. Nakatsuka, A. Sakai, and Y. Yasuda, in Proc. of IUMRS International Conference in Asia 2004, (2004).
  18. "Preparation and Evaluation of NiGe Gate Electrodes for Metal-Oxide-Semiconductor Devices", Y. Kaneko, H. Kondo, A. Sakai, S. Zaima, and Y. Yasuda, in Proc. of the First International Symposium SiGe: Materials, Processing, and Devices, vol. 2004-07, pp. 1107-1111 (2004).
  19. "電流注入ストレスを加えたゲート酸化膜の電流検出型原子間力顕微鏡による解析", 世古明義, 渡辺行彦, 近藤博基, 酒井朗, 財満鎭明, 安田幸夫, 電子情報通信学会論文誌 J87-C (8), pp. 616-624 (2004).
  20. "Si及びSi1-x-yGexCy上のNiシリサイド形成", 中塚理, 酒井朗, 財満鎭明, 安田幸夫, 電気学会研究会資料(電子材料研究会), EFM-04, pp. 25-30 (2004).
  21. "ラジカル窒化過程におけるエネルギーバンドギャップ形成機構のSTM/STS解析", 近藤博基, 河合圭悟, 宮崎香代子, 酒井朗, 財満鎭明, 安田幸夫, 応用物理学会分科会シリコンテクノロジー資料, No. 61-1, pp. 26-31, (2004).
  22. "電流検出型原子間力顕微鏡を用いたゲート絶縁膜の局所リーク電流評価", 世古明義、渡辺行彦、近藤博基、酒井朗、財満鎭明、安田幸夫, 応用物理学会分科会シリコンテクノロジー資料, No. 61-2, pp. 31-36, (2004).

（2003年以前は当研究室の前身である安田研究室における業績を含みます。）

2003
  1. "Contact resistivity between tungsten and impurity (P and B)-doped Si1-x-yGexCy epitaxial layer", J. Noh, M. Sakuraba, J. Murota, S. Zaima, and Y. Yasuda, Appl. Surf. Sci. 212-213, pp. 679-683 (2003).
  2. "Control in the initial growth stage of heteroepitaxial Si1-x-yGexCy on Si(0 0 1) substrates", S. Zaima, A. Sakai, and Y. Yasuda, Appl. Surf. Sci. 212-213, pp. 184-192 (2003).
  3. "Effect of Al Interlayers on Two-Step Epitaxial Growth of CoSi2 on Si(100) ", O. Nakatsuka, H. Onoda , E. Okada, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Appl. Surf. Sci. 216, (1-4), pp. 174-180 (2003).
  4. "Local Leakage Current of HfO2 Thin Films Characterized by Conducting Atomic Force Microscopy", H. Ikeda, T. Goto, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 42 (4B), pp. 1949-1953 (2003).
  5. "Scanning Tunneling Microscopy of Initial Nitridation Processes on Oxidized Si(100) Surface with Radical Nitrogen", R. Takahashi, Y. Kobayashi, H. Ikeda, M. Sakashita, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 42 (4B), pp. 1966-1970 (2003).
  6. "Novel Nonvolatile Random-Access Memory with Si Nanocrystals for Ultralow-Power Scheme", A. Shibata, H. Kotaki, T. Ogura, N. Arai, K. Adachi, A. Kito, S. Kakimoto, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 42 (4B), pp. 2387-2390 (2003).
  7. "High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems", K. Kobayashi, M. Yabashi, Y. Takata, T. Tokushima, S. Shin, K. Tamasaku, D. Miwa, T. Ishikawa, H. Nohira, T. Hattori, Y. Sugita, O. Nakatsuka, A. Sakai, and S. Zaima, Appl. Phys. Lett. 83 (5), pp. 1005-1007 (2003)
  8. "Surface and Interface Smoothing of Epitaxial CoSi2 Films by Solid-Phase Epitaxy Using Adsorbed Oxygen Layers and Two-Step Growth on Si(001) Surfaces", Y. Hayashi, A. Sakai, H. Ikeda, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 42 (11), pp. 7039-7044 (2003).
  9. "Reactive Deposition Epitaxy of CoSi2 Films on Clean and Oxygen-Adsorbed Si(001) Surfaces", Y. Hayashi, A. Sakai, H. Ikeda, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 42 (12), pp. 7482-7488 (2003).
  10. "Ultra-high vacuum rapid thermal chemical vapor deposition for formation of TiN as barrier metals", S. Naito, M. Okada, O. Nakatsuka, T. Okuhara, A. Sakai, S. Zaima, and Y. Yasuda, in Rapid Thermal Processing for Future Semiconductor Devices (edited by Hisashi Fukuda, Elsevier, Amsterdam), pp. 29-35 (2003).
  11. "電子注入ストレスを加えたゲート酸化膜の電流検出型原子間力顕微鏡による解析", 世古明義, 渡辺行彦, 近藤博基, 酒井朗, 財満鎭明, 安田幸夫, Technical report of IEICE (信学技報) 103, No. 148, pp. 1-6 (2003).

2002
  1. "Study on solid-phase reactions in Ti/p+-Si1-x-yGexCy/Si(100) cintacts", A. Tobioka, Y. Tsuchiya, H. Ikeda, A. Sakai, S. Zaima, J. Murota, and Y. Yasuda, Mater. Sci. Eng., Vol. B89, pp. 373-377 (2002).
  2. "Characterization of defect traps in SiO2 thin films influence of temperature on defects", J.-Y. Rosaye, N. Kurumado, M. Sakashita, H. Ikeda, A. Sakai, P. Mialhe, J.-P. Charles, S. Zaima, Y. Yasuda, and Y. Watanabe, Microelectronics Journal 33 (5-6), pp. 429-436 (2002).
  3. "Growth processes and electrical characteristics of silicon nitride films formed on Si(100) by radical nitrogen", H. Ikeda, D. Matsushita, S. Naito, K. Ohmori, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 41 (4B) pp. 2463-2467, (2002).
  4. "Structural and electrical characteristics of HfO2 films fabricated by pulsed laser deposition", H. Ikeda, S. Goto, K. Honda, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 41 (4B), pp. 2476-2479 (2002).
  5. "Electrical properties and solid-phase reactions in Ni/Si(100) contacts", Y. Tsuchiya, A. Tobioka, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 41 (4B), pp. 2450-2454. (2002).
  6. "Electrical Properties of Ni silicide/silicon contact", Y. Tsuchiya, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, in Proc. Advanced Metallization Conference 2001 (Edited by A. J. Mckerrow, Y. S.-Diamand, S. Zaima, and T. Ohba, Materials Research Society, Warrendale, Pennsylvania) pp. 679-684 (2002).
  7. "シリコンナノテクノロジー", 財満鎭明, 日本機械学会誌, 105, pp. 16-20 (2002).
  8. "超微細化に向けたULSI薄膜技術", 財満鎭明, 安田幸夫, 表面技術 53 (12), pp. 32-36 (2002).
  9. "ヘテロエピタキシャル成長における歪み緩和と貫通転位の低減", 酒井朗, 財満鎭明, 安田幸夫, 日本結晶成長学会誌 29 (5), pp. 423-430 (2002).

2001
  1. "Local electrical characteristics of ultra-thin SiO2 films formed on Si(100) surfaces", H. Ikeda, N. Kurumado, K. Ohmori, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda, Surf. Sci. 493, pp. 653-658 (2001).
  2. "Application of a two-step growth to the formation of epitaxial CoSi2 films on Si(001) surfaces: Comparative study using reactive deposition epitaxy", Y. Hayashi, T. Katoh, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 40, No. 1, pp. 269-275 (2001).
  3. "Microscopic Observation of X-ray Irradiation Damages in Ultra-Thin SiO2 Films", K. Ohmori, T. Goto, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 40 (4), pp. 2823-2826 (2001).
  4. "Atomic-scale characterization of nitridation processes on Si(100)-2x1 surfaces by radical nitrogen", D. Matsushita, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 40 (4), pp. 2827-2829 (2001).
  5. "Atomistic evolution of Si1-x-yGexCy thin films on Si(001) surfaces", A. Sakai, Y. Torige, M. Okada, H. Ikeda, Y. Yasuda, and S. Zaima, Appl. Phys. Lett. 79 (20), pp. 3242-3244 (2001).
  6. "Reduction of threading dislocation density in SiGe layers on Si (001) using a two-step strain-relaxation procedure", A. Sakai, K. Sugimoto, T. Yamamoto, M. Okada, H. Ikeda, Y. Yasuda, and S. Zaima, Appl. Phys. Lett. 79 (21), pp. 3398-3400 (2001).
  7. "Characterization of deffect traps in SiO2 thin films", J.-Y. Rosaye, P. Mialhe, J.-P. Charles, M. Sakashita, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Active and Passive Elec. Comp. 24, 169-175 (2001).
  8. "Interface reactions in Ti/Si1-xGex/Si(100) studied by TEM and ADF imaging on a newly installed 200 kV TEM/STEM", N. Tanaka, J. J. Hu, J. Yamasaki, Y. Murooka, S. Zaima, and Y. Yasuda, Electron Microscopy and Analysis 172, pp. 373-376 (2001).
  9. "Real-time observation of initial oxidation on highly B-doped Si(100)-2x1 surfaces using scanning tunneling microscopy", K. Ohmori, M. Tsukakoshi, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, in Proceedings of 25th International Conference on the Physics of Semiconductors, pp. 329-330 (2001).
  10. [総合報告］ "シリコンLSI新材料技術の現状と課 題　－フロントエンドプロセス－", 財満鎭明, 安田幸夫, 応用物理 70 (9), pp. 1050-1060 (2001).
  11. "パルスレーザー蒸着法による高誘電率薄膜の作製と電気的特性", 池田浩也, 後藤覚, 本多一隆, 坂下満男, 酒井朗, 財満鎭明, 安田幸夫, Technical report of IEICE(信学技報) SDM2001-57, pp. 25-29 (2001).

2000
  1. "Nucleation and growth of Ge on Si(111) in solid phase epitaxy", I. Suzumura, M. Okada, A. Muto, Y. Torige, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Thin Solid Films 369, pp. 116- 120, (2000).
  2. "Epitaxial growth of heavily B-doped SiGe films and interfacial reaction of Ti/B-doped SiGe bilayer structure using rapid thermal processing", M. Okada, H. Kamioka, H. Matsuo, Y. Fukuda, S. Zaima, K. Kawamura, and Y. Yasuda, Thin Solid Films 369, pp. 130- 133, (2000).
  3. "A study on the local bonding structures of oxidized Si(111) surfaces by HREELS", K. Sato, Y. Nakagawa, H. Ikeda, S. Zaima, Y. Yasuda, Thin Solid Films 369, pp. 277- 280, (2000).
  4. "Scanning tunneling microscopy/scanning tunneling spectroscopy of initial nitridation process of Si(100)-2x1 surfaces", D. Matsushita, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Thin Solid Films 369, pp. 293- 296, (2000).
  5. "Interfacial reactions of Ti/ and Zr/Si1-xGex/Si contacts with rapid thermal annealing", Y. Yasuda, O. Nakatsuka, S. Zaima, Thin Solid Films 373, pp. 73- 78, (2000).
  6. "Control of crystal structure and ferroelectric properties of Pb(ZrxTi1-x)O3 films formed by pulsed laser deposition", H. Fujita, S. Goto, M. Sakashita, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys. 39 (12B), pp. 7035-7039, (2000).
  7. "Orientation dependence of ferroelectric properties of Pb(ZrxTi1-x)O3 thin films on Pt/SiO2/Si substrates", H. Fujita, M. Imade, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda, Appl. Surf. Sci. 159-160, pp. 134-137, (2000).
  8. "Selectivity for O adsorption position on dihydride Si(100) surfaces", Hiroyuki Kageshima, Kenji Shiraishi, H. Ikeda, S. Zaima, Y. Yasuda, Appl. Surf. Sci. 159-160, pp. 14-18, (2000).
  9. "Dependence of contact resistivity on impurity concentration in Co/Si systems", O. Nakatsuka, T. Ashizawa, K. Nakai, A. Tobioka, A. Sakai, S. Zaima, and Y. Yasuda, Appl. Surf. Sci. 159-160, pp. 149-153, (2000).
  10. "A study on initial oxidation of Si(100)-2x1 surfaces by coaxial impact collision ion scattering spectroscopy (CAICISS)", M. Wasekura, M. Higashi, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, Appl. Surf. Sci. 159-160, pp. 35-40, (2000).
  11. "Trap creation in ultrathin SiO2 films due to electron injection studied by scanning tunneling microscopy/scanning tunneling spectroscopy", K. Ohmori, S. Zaima, and Y. Yasuda, Appl. Surf. Sci. 162-163, pp. 395-400, (2000).
  12. "Low resistivity contact materials for ULSI applications and metal/silicon interfaces", S. Zaima, Y. Yasuda, Ext. Abst. 19th Electronic Symp. Izu-Nagaoka, pp. 3-6, (2000).
  13. "The origin and the creation mechanism of positive charges in silicon oxide films", K. Ohmori, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, in Proc. of the 4th Int. Symp. on the Physics and Chemistry of SiO2 and the Si-SiO2 interface, pp. 345-352, (2000).
  14. "シリコン表面の初期酸化と水素", 安田幸夫, 池田浩也、財満鎭明, J. Vac. Soc. Jap.（真空） 43 (3), pp. 440-440, (2000).
  15. "収束イオンビームを用いたナノチャネルMOSFETの作製とクーロンブロッケード現象", 安田幸夫, 泉川健太、酒井朗、財満鎭明, 電子情報通信学会信学技報, ED99-291, SDM99-184(2000-02), pp. 7-11, (2000).