June 3Thur. → 5Sat. 2010
Tokyo Tech. Front (Kuramae kaikan), Tokyo Institute of Technology, Tokyo, JAPAN
Sponsored by Scientific Research on Priority Areas (No. 18063012, “Post-scaling”) from the Ministry of Education, Culture, Sports, Science and Technology in Japan
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Invited Speakers
- Prof. Yoshio Nishi (Stanford Univ.)
- "Perspective of silicon based devices and integrations, today and tomorrow"
- Prof. Marc Heyns (IMEC)
- "Advancing CMOS beyond the Si roadmap with Ge and III/V devices"
- Dr. Ghavam Shahidi (IBM)
- "Si Based Nano-Devices for 15-11 nm Technology Node and Beyond"
- Prof. Tadashi Shibata (The Univ. of Tokyo)
- "A Brain-Inspired Architecture for Nano-Device-Based Silicon Circuits and Systems"
- Prof. Akira Toriumi (The Univ. of Tokyo)
- "Design of Interfacing Fields for Advanced Electron Devices"
- Prof. Hideo Ohno (Tohoku Univ.)
- "Spintronics for Nonvolatile Silicon Nanoelectronics"
- Dr. Shigetoshi Hosaka (TEL)
- "Basic Technology Research for Semiconductor Equipment System Development"
- Prof. Taiichi Otsuji (Tohoku Univ.)
- "Trends and future of graphene-based terahertz nano-photonics"
- Prof. Feng Wang (Univ. of California, Berkeley)
- "Tunable electronic and optical properties of graphene"